BFG425W_2015

BFG425W_2015 JMNIC | Alldatasheet

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Technical content

Product specification Supersedes data of 1997 Oct 28 File under Discrete Semiconductors, SC14

1998 Mar 11

NPN 25 GHz wideband transistor

1998 Mar 11 2

Philips Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W

FEATURES

• Very high power gain
• Low noise figure
• High transition frequency
• Emitter is thermal lead
• Low feedback capacitance.

APPLICATIONS

• RF front end
• Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.)
• Radar detectors
• Pagers
• Satellite television tuners (SATV)
• High frequency oscillators.

DESCRIPTION

NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. PINNING PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector Fig.1 Simplified outline SOT343R. Marking code: P5. handbook, halfpage Top view MSB842 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 10 V VCEO collector-emitter voltage open base −− 4.5 V IC collector current (DC) − 25 30 mA Ptot total power dissipation Ts ≤ 103 °C −− 135 mW hFE DC current gain I C = 25 mA; VCE =2V ; Tj=2 5°C 5 08 01 2 0 C re feedback capacitance IC = 0; VCB = 2 V; f = 1 MHz − 95 − fF fT transition frequency IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb =2 5°C − 25 − GHz G max maximum power gain I C = 25 mA; VCE = 2 V; f = 2 GHz; Tamb =2 5°C − 20 − dB F noise figure I C = 2 mA; VCE = 2 V; f = 2 GHz;ΓS = Γopt − 1.2 − dB CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

1998 Mar 11 3

Philips Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature at the soldering point of the emitter pins. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 10 V VCEO collector-emitter voltage open base − 4.5 V VEBO emitter-base voltage open collector − 1V IC collector current (DC) − 30 mA Ptot total power dissipation T s ≤ 103 °C; note 1; see Fig.2 − 135 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Fig.2 Power derating curve. handbook, halfpage 0 40 160 200 150 100 80 120 MGG681 Ts (°C) Ptot (mW) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT R th j-s thermal resistance from junction to soldering point 350 K/W

1998 Mar 11 4

Philips Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W CHARACTERISTICS Tj=2 5°C unless otherwise specified. Notes 1. G max is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG; see Figs 6, 7 and 8. 2. ZS is optimized for noise; ZL is optimized for gain. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)CBO collector-base breakdown voltage IC = 2.5µA; IE =0 1 0 −− V V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB = 0 4.5 −− V V(BR)EBO emitter-base breakdown voltage IE = 2.5µA; IC =0 1 −− V ICBO collector-base leakage current IE = 0; VCB = 4.5 V −− 15 nA hFE DC current gain I C = 25 mA; VCE = 2 V; see Fig.3 50 80 120 C c collector capacitance I E =ie = 0; VCB = 2 V; f = 1 MHz − 300 − fF C e emitter capacitance I C =ic = 0; VEB = 0.5 V; f = 1 MHz− 575 − fF C re feedback capacitance I C = 0; VCB = 2 V; f = 1 MHz; see Fig.4 − 95 − fF fT transition frequency I C = 25 mA; VCE = 2 V; f = 2 GHz; Tamb =2 5°C; see Fig.5 − 25 − GHz G max maximum power gain; note 1 I C = 25 mA; VCE = 2 V; f = 2 GHz; Tamb =2 5°C; see Figs 7 and 8 − 20 − dB insertion power gain I C = 25 mA; VCE = 2 V; f = 2 GHz; Tamb =2 5°C; see Fig.8 − 17 − dB F noise figure I C = 2 mA; VCE = 2 V; f = 900 MHz; ΓS = Γopt; see Fig.13 − 0.8 − dB IC = 2 mA; VCE = 2 V; f = 2 GHz; ΓS = Γopt; see Fig.13 − 1.2 − dB PL1 output power at 1 dB gain compression IC = 25 mA; VCE = 2 V; f = 2 GHz; ZS =Z S opt; ZL =Z L opt; note 2 − 12 − dBm ITO third order intercept point I C = 25 mA; VCE = 2 V; f = 2 GHz; ZS =Z S opt; ZL =Z L opt; note 2 − 22 − dBm S 21

1998 Mar 11 5

Philips Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W Fig.3 DC current gain as a function of collector current; typical values. (1) VCE =3V . (2) VCE =2V . (3) VCE =1V . handbook, halfpage 01 02 0 4 0 30 MGG682 120 IC (mA) hFE (3) (2) (1) IC = 0; f = 1 MHz. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. handbook, halfpage 01 5 200 120 160 23 4 MGG683 VCB (V) C re (fF) Fig.5 Transition frequency as a function of collector current; typical values. VCE = 2 V; f = 2 GHz; Tamb =2 5°C. handbook, halfpage25 MGG684 11 0 1 0 2 fT (GHz) IC (mA) VCE = 2 V; f = 900 MHz. Fig.6 Maximum stable gain as a function of collector current; typical values. handbook, halfpage 01 02 0 4 0 30 MGG685 IC (mA) MSG (dB)

1998 Mar 11 6

Philips Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W VCE = 2 V; f = 2 GHz. Fig.7 Gain as a function of collector current; typical values. handbook, halfpage 01 0 3 0 20 40 MGG686 IC (mA) gain (dB) MSG G max IC = 25 mA; VCE =2V . Fig.8 Gain as a function of frequency; typical values. handbook, halfpage50 10 10 2 103 104 MGG687 f (MHz) gain (dB) MSG G max S21 Fig.9 Common emitter input reflection coefficient (S11); typical values. IC = 25 mA; VCE = 2 V; Zo =5 0Ω. MGG689 handbook, full pagewidth MGG689 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135°

40 MHz

3 GHz

1998 Mar 11 7

Philips Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W Fig.10 Common emitter forward transmission coefficient (S21); typical values. IC = 25 mA; VCE =2V . handbook, full pagewidth MGG690 50 40 30 20 10 180° −135° −90° −45° 45° 90° 135°

40 MHz 3 GHz

IC = 25 mA; VCE =2V . Fig.11 Common emitter reverse transmission coefficient (S12); typical values. handbook, full pagewidth MGG691 180° −135° −90° −45° 45° 90° 135°

1998 Mar 11 8

Philips Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W Fig.12 Common emitter output reflection coefficient (S22); typical values. IC = 25 mA; VCE = 2 V; Zo =5 0Ω. handbook, full pagewidth MGG692 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135° VCE = 2 V; typical values. f (MHz) IC (mA) Fmin (dB) Γmag Γangle rn (Ω ) 900 1 0.7 0.67 19.1 0.40 2 0.8 0.48 17.8 0.27 4 1 0.28 11.7 0.24 10 1.4 0.02 −63.9 0.19 15 1.6 0.11 −162.4 0.18 20 1.9 0.19 −165.5 0.18 25 2.1 0.25 −166.3 0.19 30 2.3 0.29 −166.5 0.19 2000 1 1.3 0.56 57.5 0.36 2 1.2 0.43 57.2 0.25 4 1.2 0.22 60.8 0.18 10 1.6 0.06 137.4 0.19 15 1.9 0.13 −162.1 0.20 20 2.2 0.17 −155.5 0.20 25 2.5 0.22 −152.2 0.21 30 2.8 0.27 −150.8 0.25 Fig.13 Minimum noise figure as a function of the collector current; typical values. (1) VCE = 2 V; f = 2 GHz. (2) VCE = 2 V; f = 900 MHz. handbook, halfpage 0 1 02 03 0 MGG688 IC (mA) Fmin (dB) (1) (2)

1998 Mar 11 9

Philips Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W SPICE parameters for the BFG425W die SEQUENCE No. PARAMETER VALUE UNIT 1 IS 47.17 aA 2 BF 145.0 − 3 NF 0.993 − 4 VAF 31.12 V 5 IKF 304.0 mA 6 ISE 300.2 fA 7 NE 3.000 − 8 BR 11.37 − 9 NR 0.985 − 10 VAR 1.874 V 11 IKR 0.121 A 12 ISC 484.8 aA 13 NC 1.546 − 14 RB 14.41 Ω 15 IRB 0.000 A 16 RBM 6.175 Ω 17 RE 177.9 m Ω 18 RC 1.780 Ω (1) XTB 1.500 − 20 (1) EG 1.110 eV 21 (1) XTI 3.000 − 22 CJE 310.9 fF 23 VJE 900.0 mV 24 MJE 0.346 − 25 TF 4.122 ps 26 XTF 68.20 − 27 VTF 2.004 V 28 ITF 1.525 A 29 PTF 0.000 deg 30 CJC 137.7 fF 31 VJC 556.9 mV 32 MJC 0.207 − 33 XCJC 0.500 − (1) TR 0.000 ns 35 (1) CJS 667.5 fF 36 (1) VJS 418.3 mV 37 (1) MJS 0.239 − 38 FC 0.550 − Notes 1. These parameters have not been extracted, the default values are shown. 2. Bonding pad capacity Cbp in series with substrate resistance Rsb1 between B′ and E′. 3. Bonding pad capacity Cbp in series with substrate resistance Rsb2 between C′ and E′. List of components(see Fig.14) Note 1. External emitter inductance to be added separately due to the influence of the printed-circuit board. 39 (2)(3) C bp 145 fF 40 (2) R sb1 25 Ω 41 (3) R sb2 19 Ω DESIGNATION VALUE UNIT C be 80 fF C cb 2f F C ce 80 fF L1 1.1 nH L2 1.1 nH L3 (note 1) 0.25 nH SEQUENCE No. PARAMETER VALUE UNIT QL B = 50; QLE = 50; QLB,E( f )=Q LB,E√(f/fc) fc = scaling frequency = 1 GHz. Fig.14 Package equivalent circuit SOT343R2. handbook, halfpage MGD956 B E CB' C' L1 L2 C cb C be ce C

1998 Mar 11 10

Philips Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT343R D A Lp Q detail X c H E E v M A AB 0 1 2 mm scale X Plastic surface mounted package; reverse pinning; 4 leads SOT343R w M B 97-05-21 bp UNIT A 1 max bp cD Eb1 H E Lp Qw v mm 0.11.1 0.8 0.4 0.3 0.25 0.10 0.7 0.5 2.2 1.8 1.35 1.15 e 2.2 2.01.3 0.2 y 0.10.21.15 DIMENSIONS (mm are the original dimensions) 0.45 0.15 0.23 0.13 A e y

1998 Mar 11 11

Philips Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

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