BFG424F_15 JMNIC | Alldatasheet
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Technical content
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1.1 General description
NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package.
1.2 Features
■ Very high power gain ■ Low noise figure ■ High transition frequency ■ Emitter is thermal lead ■ Low feedback capacitance
1.3 Applications
■ Radio Frequency (RF) front end wideband applications such as: ◆ analog and digital cellular telephones ◆ cordless telephones (Cordless Telephone (CT), Personal Handy-phone System (PHS), Digital Enhanced Cordless Telecommunications (DECT), etc.) ◆ radar detectors ◆ pagers ◆ Satellite Antenna TeleVison (SATV) tuners ◆ high frequency oscillators e.g. Dielectric Resonator Oscillator (DRO) for Low Noise Block (LNB)
1.4 Quick reference data
NPN 25 GHz wideband transistor Rev. 01 — 21 March 2006 Product data sheet CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. MSC895 Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 10 V VCEO collector-emitter voltage open base - - 4.5 V IC collector current - 25 30 mA Ptot total power dissipation Tsp ≤ 90 °C [1] - - 135 mW
BFG424F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 21 March 2006 2 of 13 Philips Semiconductors BFG424F NPN 25 GHz wideband transistor [1] Tsp is the temperature at the soldering point of the emitter pins. [2] G p(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG), see Figure8. 2. Pinning information 3. Ordering information 4. Marking [1] * = p: made in Hong Kong. hFE DC current gain I C = 25 mA; VCE =2V ; Tj=2 5°C 50 80 120 C CBS collector-base capacitance VCB = 2 V; f = 1 MHz - 102 - fF fT transition frequency IC = 25 mA; VCE =2V ; f = 2 GHz; Tamb =2 5°C - 25 - GHz G p(max) maximum power gain I C = 25 mA; VCE =2V ; f = 2 GHz; Tamb =2 5°C [2] -2 3 -d B NF noise figure I C = 2 mA; VCE =2V ; f = 2 GHz;ΓS = Γopt - 1.2 - dB Table 1: Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Table 2: Pinning Pin Description Simplified outline Symbol 1 emitter 2 base 3 emitter 4 collector mbb159 1, 3 Table 3: Ordering information Type number Package Name Description Version BFG424F - plastic surface mounted flat pack package; reverse pinning; 4 leads SOT343F Table 4: Marking Type number Marking code[1] BFG424F NE*
BFG424F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 21 March 2006 3 of 13 Philips Semiconductors BFG424F NPN 25 GHz wideband transistor 5. Limiting values [1] Tsp is the temperature at the soldering point of the emitter pins. 6. Thermal characteristics [1] Tsp is the temperature at the soldering point of the emitter pins. Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 10 V VCEO collector-emitter voltage open base - 4.5 V VEBO emitter-base voltage open collector - 1 V IC collector current - 30 mA Ptot total power dissipation Tsp ≤ 90 °C [1] - 135 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Table 6: Thermal characteristics Symbol Parameter Conditions Typ Unit R th(j-sp) thermal resistance from junction to solder point Tsp ≤ 90 °C [1] 340 K/W Fig 1. Power derating curve Tsp (°C) 0 160 12040 80 001aad817 100 150 200 Ptot (mW)
BFG424F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 21 March 2006 4 of 13 Philips Semiconductors BFG424F NPN 25 GHz wideband transistor 7. Characteristics [1] G p(max) is the maximum power gain, if K> 1. If K< 1 then Gp(max) = MSG, seeFigure8. [2] ZS is optimized for noise; ZL is optimized for gain. Table 7: Characteristics Tj=2 5°C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)CBO collector-base breakdown voltage IC = 2.5µA; IE = 0 mA 10 - - V V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB = 0 mA 4.5 - - V V(BR)EBO open-collector emitter-base breakdown voltage I E = 2.5µA; IC =0m A 1 - - V ICBO collector-base cut-off current IE = 0 mA; VCB = 4.5 V - - 15 nA hFE DC current gain I C = 25 mA; VCE = 2 V 50 80 120 C CES collector-emitter capacitance VCB = 2 V; f = 1 MHz - 363 - fF C EBS emitter-base capacitance VEB = 0.5 V; f = 1 MHz - 475 - fF C CBS collector-base capacitance VCB = 2 V; f = 1 MHz - 102 - fF fT transition frequency IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb =2 5°C - 25 - GHz G p(max) maximum power gain IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb =2 5°C [1] -2 3 -d B |s21|2 insertion power gain IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb =2 5°C - 18.5 - dB NF noise figure I C = 2 mA; VCE =2V ; f = 900 MHz;ΓS = Γopt - 0.8 - dB IC = 2 mA; VCE = 2 V; f = 2 GHz; ΓS = Γopt - 1.2 - dB PL(1dB) output power at 1 dB gain compression I C = 25 mA; VCE = 2 V; f = 2 GHz; ZS =Z S(opt); ZL =Z L(opt) [2] - 12 - dBm IP3 third-order intercept point IC = 25 mA; VCE = 2 V; f = 2 GHz; ZS =Z S(opt); ZL =Z L(opt) [2] - 22 - dBm
BFG424F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 21 March 2006 5 of 13 Philips Semiconductors BFG424F NPN 25 GHz wideband transistor (1) IB = 400µA (2) IB = 350µA (3) IB = 300µA (4) IB = 250µA (5) IB = 200µA (6) IB = 150µA (7) IB = 100µA (8) IB =5 0µA (1) VCE =3V (2) VCE =2V (3) VCE =1V Fig 2. Collector current as a function of collector-emitter voltage; typical values Fig 3. DC current gain as a function of collector current; typical values f=1M H z Fig 4. Collector-base capacitance as a function of collector-base voltage; typical values VCE (V) 05 4231 001aad818 IC (mA) (1) (2) (3) (4) (5) (6) (7) (8) IC (mA) 04 0 3010 20 001aad819 120 hFE (1) (2) (3) VCB (V) 05 4231 001aad820 120 160 200 C CBS (fF)
BFG424F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 21 March 2006 6 of 13 Philips Semiconductors BFG424F NPN 25 GHz wideband transistor VCE = 2 V; f = 2 GHz; Tamb =2 5°CV CE = 2 V; f = 0.9 GHz; Tamb =2 5°C Fig 5. Transition frequency as a function of collector current; typical values Fig 6. Gain as a function of collector current; typical values VCE = 2 V; f = 2 GHz; Tamb =2 5°CV CE =2V ; IC = 25 mA; Tamb =2 5°C Fig 7. Gain as a function of collector current; typical values Fig 8. Gain as a function of frequency; typical values 001aad821 f T (GHz) IC (mA) 11 0 210 001aad822 G (dB) I C (mA) 11 0 210 MSG s21 2 001aad823 G (dB) I C (mA) 11 0 210 G p(max) MSG s21 2 f (GHz) 10-1 102101 001aad824 G (dB) MSG G p(max) s21 2
BFG424F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 21 March 2006 7 of 13 Philips Semiconductors BFG424F NPN 25 GHz wideband transistor VCE =2V ; IC = 25 mA; Zo =5 0Ω Fig 9. Common emitter input reflection coefficient (s11); typical values VCE =2V ; IC =2 5m A Fig 10. Common emitter reverse transmission coefficient (s12); typical values 001aad825 90° -90° 50.50.2 +0.2 -0.2 +0.5 -0.5 21 10 0 0.2 0.6 0.4 0.8 1.0 1.0 -45°-135° 45°135° 180° 0°
12 GHz
100 MHz
90° -90° -45°-135° 45°135°
BFG424F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 21 March 2006 8 of 13 Philips Semiconductors BFG424F NPN 25 GHz wideband transistor VCE =2V ; IC =2 5m A Fig 11. Common emitter forward transmission coefficient (s21); typical values VCE =2V ; IC = 25 mA; Zo =5 0Ω Fig 12. Common emitter input reflection coefficient (s22); typical values 001aad827 90° -90° -45°-135° 45°135° 0°0180° 50 40 30 20 10 90° -90° 50.50.2 +0.2 -0.2 +0.5 -0.5 21 10 0 0.2 0.6 0.4 0.8 1.0 1.0 -45°-135° 45°135° 180° 0°
BFG424F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 21 March 2006 9 of 13 Philips Semiconductors BFG424F NPN 25 GHz wideband transistor
7.1 Noise data
Table 8: Noise data VCE = 2 V; typical values. f IC NF min Γopt rn (MHz) (mA) (dB) ratio (deg) (Ω ) 900 1 0.7 0.67 19.1 0.40 2 0.81 0.48 17.8 0.27 4 1 0.28 11.7 0.24 10 1.4 0.02 −63.9 0.19 15 1.65 0.11 −162.4 0.18 20 1.9 0.19 −165.5 0.18 25 2.1 0.25 −166.3 0.19 30 2.3 0.29 −166.5 0.19 2000 1 1.3 0.56 57.5 0.36 2 1.2 0.43 57.2 0.25 4 1.2 0.22 60.8 0.18 10 1.6 0.06 137.4 0.19 15 1.9 0.13 −162.1 0.20 20 2.2 0.17 −155.5 0.20 25 2.5 0.22 −152.2 0.21 30 2.8 0.27 −150.8 0.25 (1) f = 2 GHz (2) f = 900 MHz Fig 13. Minimum noise figure as a function of collector current; typical values 001aad829 IC (mA) 03 0 2010 NF min (dB) (1) (2)
BFG424F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 21 March 2006 10 of 13 Philips Semiconductors BFG424F NPN 25 GHz wideband transistor 8. Package outline Fig 14. Package outline SOT343F REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT343F SOT343F 05-07-12 06-03-16 UNIT A max mm 0.4 0.3 0.75 0.65 0.7 0.5 2.2 1.8 0.25 0.10 1.35 1.15 0.48 0.38 2.2 2.0 bp DIMENSIONS (mm are the original dimensions) Plastic surface-mounted flat pack package; reverse pinning; 4 leads b1 c D E e e1 H E 1.151.3 Lp w y 0.10.2 0 1 2 mm scale detail X Lp c A E X H E D A y bp b1 e wAMwAM
BFG424F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 21 March 2006 11 of 13 Philips Semiconductors BFG424F NPN 25 GHz wideband transistor 9. Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Supersedes BFG424F_1 20060321 Product data sheet - -
Philips Semiconductors BFG424F NPN 25 GHz wideband transistor BFG424F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 21 March 2006 12 of 13 10. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions Short-form specification —The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 13. Trademarks Notice —All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 21 March 2006 BFG424F_1 Published in The Netherlands Philips Semiconductors BFG424F NPN 25 GHz wideband transistor 15. Contents