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BFG35_15 JMNIC | Alldatasheet

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Product speciﬁcation Supersedes data of 1995 Sep 12

1999 Aug 24

NPN 4 GHz wideband transistor

1999 Aug 24 2

Philips Semiconductors Product speciﬁcation NPN 4 GHz wideband transistor BFG35

DESCRIPTION

NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities. PINNING PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector Fig.1 SOT223. page 4 123 MSB002 - 1Top view QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCEO collector-emitter voltage open base −− 18 V IC DC collector current −− 150 mA Ptot total power dissipation up to T s = 135°C (note 1) −− 1W hFE DC current gain I C = 100 mA; VCE = 10 V; Tj=2 5°C2 5 7 0 − fT transition frequency I C = 100 mA; VCE =1 0V ; f = 500 MHz; Tamb =2 5°C − 4 − GHz G UM maximum unilateral power gain IC = 100 mA; VCE =1 0V ; f = 500 MHz; Tamb =2 5°C − 15 − dB IC = 100 mA; VCE =1 0V ; f = 800 MHz; Tamb =2 5°C − 11 − dB Vo output voltage I C = 100 mA; VCE =1 0V ; dim = −60 dB; RL =7 5Ω ; f(p+q−r)= 793.25 MHz; Tamb =2 5°C − 750 − mV SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 18 V VEBO emitter-base voltage open collector − 2V IC DC collector current − 150 mA Ptot total power dissipation up to T s = 135°C (note 1) − 1W Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C

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Philips Semiconductors Product speciﬁcation NPN 4 GHz wideband transistor BFG35 THERMAL CHARACTERISTICS Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj=2 5°C unless otherwise speciﬁed. Notes 1. G UM is the maximum unilateral power gain, assuming S12 is zero and 2. dim = −60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL =7 5Ω ; Tamb =2 5°C Vp =V o at dim = −60 dB; fp = 795.25 MHz; Vq =V o −6 dB; fq = 803.25 MHz; Vr =V o −6 dB; fr = 805.25 MHz; measured at f(p+q−r)= 793.25 MHz. 3. dim = −60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL =7 5Ω ; Tamb =2 5°C Vp =V o at dim = −60 dB; fp = 445.25 MHz; Vq =V o −6 dB; fq = 453.25 MHz; Vr =V o −6 dB; fr = 455.25 MHz; measured at f(p+q−r)= 443.25 MHz. 4. IC = 60 mA; VCE = 10 V; RL =7 5Ω ; Vp =V q =V o = 50 dBmV; f(p+q)= 450 MHz; fp = 50 MHz; fq = 400 MHz. 5. IC = 60 mA; VCE = 10 V; RL =7 5Ω ; Vp =V q =V O = 50 dBmV; f(p+q)= 810 MHz; fp = 250 MHz; fq = 560 MHz. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point up to Ts = 135°C (note 1) 40 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current I E = 0; VCB =1 0V −− 1 µA hFE DC current gain I C = 100 mA; VCE =1 0V 2 5 7 0 − C c collector capacitance I E =ie = 0; VCB = 10 V; f = 1 MHz− 2 − pF C e emitter capacitance I C =ic = 0; VEB = 0.5 V; f = 1 MHz− 10 − pF C re feedback capacitance I C = 0; VCE =1 0V ; f=1M H z − 1.2 − pF fT transition frequency I C = 100 mA; VCE =1 0V ; f = 500 MHz; Tamb =2 5°C − 4 − GHz G UM maximum unilateral power gain (note 1) IC = 100 mA; VCE =1 0V ; f = 500 MHz; Tamb =2 5°C − 15 − dB IC = 100 mA; VCE =1 0V ; f = 800 MHz; Tamb =2 5°C − 11 − dB Vo output voltage note 2 − 750 − mV note 3 − 800 − mV d2 second order intermodulation distortion note 4 −− 55 − dB note 5 −− 57 − dB G UM 10 s21 2

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Philips Semiconductors Product speciﬁcation NPN 4 GHz wideband transistor BFG35 Fig.2 Intermodulation and second harmonic test circuit. handbook, full pagewidth MBB284 DUT VBB L1C1 input R3 R4 /#02/#03 output VCC Ω Ω List of components (see test circuit) Note 1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB. The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (εr = 2.2); thickness1⁄16 inch; thickness of copper sheet1⁄32 inch. DESIGNATION DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C3, C5, C6 multilayer ceramic capacitor 10 nF 2222 590 08627 C2, C7 multilayer ceramic capacitor 1 pF 2222 851 12108 C4 (note 1) miniature ceramic plate capacitor 10 nF 2222 629 08103 L1 microstrip line 75 Ω length 7mm; width 2.5 mm L2 microstrip line 75 Ω length 22mm; width 2.5 mm L3 (note 1) 1.5 turns 0.4 mm copper wire int. dia. 3 mm; winding pitch 1 mm L4 microstripline 75 Ω length 19 mm; width 2.5 mm L5 Ferroxcube choke 5 µH 3122 108 20153 L6 (note 1) 0.4 mm copper wire ≈25 nH length 30 mm R1 metal ﬁlm resistor 10 k Ω 2322 180 73103 R2 (note 1) metal ﬁlm resistor 200 Ω 2322 180 73201 R3, R4 metal ﬁlm resistor 27 Ω 2322 180 73279

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Philips Semiconductors Product speciﬁcation NPN 4 GHz wideband transistor BFG35 Fig.3 Intermodulation test circuit printed circuit board. handbook, full pagewidth MBB299 input output VCCVBB L1 L2 L4 R4 C4 L3Ω Ω handbook, full pagewidth MBB298 80 mm 60 mm handbook, full pagewidth MBB297

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Philips Semiconductors Product speciﬁcation NPN 4 GHz wideband transistor BFG35 Fig.4 Power derating curve. handbook, halfpage 0 50 100 200 0.8 0.6 0.2 0.4 MBB336 150 T ( C)os P tot (W) 1.0 1.2 Fig.5 DC current gain as a function of collector current. VCE = 10 V; Tj=2 5°C. handbook, halfpage 120 40 80 160 MBB361 120 I (mA)C FEh Fig.6 Feedback capacitance as a function of collector-emitter voltage. IE = 0; f = 1 MHz; Tj=2 5°C. handbook, halfpage 42 0 MBB381 81 2 1 6 V (V)CE C re (pF) Fig.7 Transition frequency as a function of collector current. VCE = 10 V; f = 500 MHz; Tj=2 5°C handbook, halfpage 0 40 80 160 MBB357 120 I (mA)C (GHz) Tf

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Philips Semiconductors Product speciﬁcation NPN 4 GHz wideband transistor BFG35 Fig.8 Maximum unilateral power gain as a function of frequency. IC = 100 mA; VCE = 10 V; Tamb =2 5°C. handbook, halfpage40 MBB386 102 103 104 f (MHz) G UM (dB) Fig.9 Intermodulation distortion as a function of collector current. VCE = 10 V; Vo = 800 mV; f(p+q−r)= 443.25 MHz; Tamb =2 5°C. handbook, halfpage MBB385 20 120 40 60 80 100 I (mA)C d (dB) im Fig.10 Intermodulation distortion as a function of collector current. VCE = 10 V; Vo = 750 mV; f(p+q−r)= 793.25 MHz; Tamb =2 5°C. handbook, halfpage MBB383 20 120 40 60 80 100 I (mA)C d (dB) im Fig.11 Second order intermodulation distortion as a function of collector current. VCE = 10 V; Vo = 50 dBmV; f(p+q)= 450 MHz; Tamb =2 5°C. handbook, halfpage MBB382 20 120 40 60 80 100 I (mA)C d (dB)

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Philips Semiconductors Product speciﬁcation NPN 4 GHz wideband transistor BFG35 Fig.12 Second order intermodulation distortion as a function of collector current. VCE = 10 V; Vo = 50 dBmV; f(p+q)= 810 MHz; Tamb =2 5°C. handbook, halfpage MBB384 20 120 40 60 80 100 I (mA)C d (dB)

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Philips Semiconductors Product speciﬁcation NPN 4 GHz wideband transistor BFG35 Fig.13 Common emitter input reflection coefficient (S11). IC = 100 mA; VCE = 10 V; Tamb =2 5°C; Zo =5 0Ω . handbook, full pagewidth MBB380 100 250 100 250 + j – j

3 GHz

Fig.14 Common emitter forward transmission coefficient (S21). IC = 100 mA; VCE = 10 V; Tamb =2 5°C. handbook, full pagewidth MBB286 30o 60o 90o 120o 150o 180 o 150o 120o 90o 60o 30o 40 203050 10

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Philips Semiconductors Product speciﬁcation NPN 4 GHz wideband transistor BFG35 Fig.15 Common emitter reverse transmission coefficient (S12). IC = 100 mA; VCE = 10 V; Tamb =2 5°C. handbook, full pagewidth MBB285 30o 60o 90o 120o 150o 180 o 150o 120o 90o 60o 30o Fig.16 Common emitter output reflection coefficient (S22). IC = 100 mA; VCE = 10 V; Tamb =2 5°C; Zo =5 0Ω . handbook, full pagewidth MBB379 100 250 100 250 + j – j 10 50 100 25025

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Philips Semiconductors Product speciﬁcation NPN 4 GHz wideband transistor BFG35 PACKAGE OUTLINE Dimensions in mm. Fig.17 SOT223. handbook, full pagewidth 6.7 6.3 0.95 0.85 2.3 0.80 0.60 4.6 3.1 2.9 3.7 3.3 7.3 6.7 A B 0.2 A 1.80 max 1616o max 10o max 0.10 0.01 0.32 0.24 123 MSA035 - 1(4x) 0.1 BM M S seating plane 0.1 S o

1999 Aug 24 12

Philips Semiconductors Product speciﬁcation NPN 4 GHz wideband transistor BFG35 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

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Philips Semiconductors Product speciﬁcation NPN 4 GHz wideband transistor BFG35 NOTES

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Philips Semiconductors Product speciﬁcation NPN 4 GHz wideband transistor BFG35 NOTES

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Philips Semiconductors Product speciﬁcation NPN 4 GHz wideband transistor BFG35 NOTES

© Philips Electronics N.V. SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Internet: http://www.semiconductors.philips.com 1999 67 Philips Semiconductors – a worldwide company For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

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Product Information

BFG35 specifications and overview.

Summary

NPN 4 GHz wideband transistor

Description

NPN 4 GHz wideband transistor

Source title BFG35_15 Datasheet(PDF) - Quanzhou Jinmei Electronic Co.,Ltd.

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