BFG310_15 JMNIC | Alldatasheet
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Technical content
- Product profile
1.1 General description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.
1.2 Features
■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability
1.3 Applications
■ Intended for Radio Frequency (RF) front end applications in the GHz range, such as: ◆ analog and digital cellular telephones ◆ cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.) ◆ radar detectors ◆ pagers ◆ Satellite Antenna TeleVision (SATV) tuners ◆ repeater amplifiers in fiber-optic systems
1.4 Quick reference data
NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 15 V VCEO collector-emitter voltage open base - - 6 V IC collector current (DC) - - 10 mA Ptot total power dissipation Tsp ≤ 145 °C [1] --6 0 m W hFE DC current gain I C = 5 mA; VCE =3V ; Tj=2 5°C 60 100 200 C CBS collector-base capacitance VCB = 5 V; f = 1 MHz; emitter grounded - 0.17 0.3 pF fT transition frequency IC = 5 mA; VCE =3V ; f = 1 GHz; Tamb =2 5°C - 14 - GHz
9397 750 14244 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 2 of 12 Philips Semiconductors BFG310/XR NPN 14 GHz wideband transistor [1] Tsp is the temperature at the soldering point of the collector pin. 2. Pinning information 3. Ordering information 4. Marking [1] * = p: made in Hong Kong. MSG maximum stable gain I C = 5 mA; VCE =3V ; f = 1.8 GHz; Tamb =2 5°C -1 8 -d B |s21|2 insertion power gain IC = 5 mA; VCE =3V ; f = 1.8 GHz; Tamb =2 5°C; ZS =Z L =5 0Ω -1 4 -d B NF noise figure Γs = Γopt; IC = 1 mA; VCE =3V ; f=2G H z -1 -d B Table 1: Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Table 2: Pinning Pin Description Simplified outline Symbol 1 collector 2 emitter 3 base 4 emitter sym086 2, 4 Table 3: Ordering information Type number Package Name Description Version BFG310/XR SC-61AA plastic surface mounted package; reverse pinning; 4 leads SOT143R Table 4: Marking codes Type number Marking code[1] BFG310/XR S1*
9397 750 14244 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 3 of 12 Philips Semiconductors BFG310/XR NPN 14 GHz wideband transistor 5. Limiting values [1] Tsp is the temperature at the soldering point of the collector pin. 6. Thermal characteristics [1] Tsp is the temperature at the soldering point of the collector pin. 7. Characteristics Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 15 V VCEO collector-emitter voltage open base - 6 V VEBO emitter-base voltage open collector - 2 V IC collector current (DC) - 10 mA Ptot total power dissipation T sp ≤ 145 °C [1] -6 0 m W Tstg storage temperature −65 +175 °C Tj junction temperature - 175 °C Table 6: Thermal characteristics Symbol Parameter Conditions Typ Unit R th(j-sp) thermal resistance from junction to solder point Tsp ≤ 145 °C [1] 530 K/W Table 7: Characteristics Tj=2 5°C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current IE = 0 A; VCB = 5 V --1 5 n A hFE DC current gain I C = 5 mA; VCE = 3 V 60 100 200 C CBS collector-base capacitance VCB = 5 V; f = 1 MHz; emitter grounded - 0.17 0.3 pF C CES collector-emitter capacitance VCE = 5 V; f = 1 MHz; base grounded - 0.28 - pF C EBS emitter-base capacitance V EB = 0.5 V; f = 1 MHz; collector grounded - 0.22 - pF fT transition frequency I C = 5 mA; VCE = 3 V; f = 1 GHz; Tamb =2 5°C - 14 - GHz MSG maximum stable gain I C = 5 mA; VCE = 3 V; f = 1.8 GHz; Tamb =2 5°C -1 8 - d B |s21|2 insertion power gain I C = 5 mA; VCE =3V ; Tamb =2 5°C; ZS =Z L =5 0Ω f = 1.8 GHz - 14 - dB f = 3 GHz - 11 - dB NF noise figure Γ s = Γopt; IC = 1 mA; VCE = 3 V; f = 2 GHz - 1 - dB PL(1dB) output power at 1 dB gain compression IC = 5 mA; VCE = 3 V; f = 1.8 GHz; Tamb =2 5°C; ZS =Z L =5 0Ω - 1.8 - dBm IP3 third order intercept point I C = 5 mA; VCE = 3 V; f = 1.8 GHz; Tamb =2 5°C; ZS =Z L =5 0Ω - 8.5 - dBm
9397 750 14244 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 4 of 12 Philips Semiconductors BFG310/XR NPN 14 GHz wideband transistor Fig 1. Power derating curve Fig 2. Collector current as a function of collector-emitter voltage; typical values IC = 0 mA; f = 1 MHz. I C = 5 mA; VCE =3V . Fig 3. Collector-base capacitance as a function of collector-base voltage; typical values Fig 4. Gain as a function of frequency; typical values Tsp (°C) 0 200 15050 100 001aac169 Ptot (mW) 001aac170 VCE (V) 06 5314 2 IC (mA) IB = 120 µA 100 µA 80 µA 40 µA 20 µA 60 µA VCB (V) 05 4231 001aac171 C CBS (pF) 0.17 0.16 0.19 0.18 0.20 0.15 001aac172 G (dB) f (MHz) 10 10 4103102 MSG s21 2
9397 750 14244 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 5 of 12 Philips Semiconductors BFG310/XR NPN 14 GHz wideband transistor VCE =3V ; IC = 5 mA; Zo =5 0Ω . Fig 5. Common emitter input reflection coefficient (s11); typical values VCE =3V ; IC = 5 mA. Fig 6. Common emitter forward transmission coefficient (s21); typical values 001aac173 90° −90° 50.50.2 +0.2 −0.2 +0.5 −0.5 21 10 0 0.2 0.6 0.4 0.8 1.0 1.0 −45°−135° 45°135° 180° 0°
3 GHz 40 MHz
90° −90° −45°−135° 45°135° 0°0180° 20 16 12 8 4
40 MHz
3 GHz
9397 750 14244 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 6 of 12 Philips Semiconductors BFG310/XR NPN 14 GHz wideband transistor VCE =3V ; IC = 5 mA. Fig 7. Common emitter reverse transmission coefficient (s12); typical values VCE =3V ; IC = 5 mA; Zo =5 0Ω . Fig 8. Common emitter output reflection coefficient (s22); typical values 001aac175 90° −90° −45°−135° 45°135° 90° −90° 50.50.2 +0.2 −0.2 +0.5 −0.5 21 10 0 0.2 0.6 0.4 0.8 1.0 1.0 −45°−135° 45°135° 180° 0°
9397 750 14244 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 7 of 12 Philips Semiconductors BFG310/XR NPN 14 GHz wideband transistor 8. Application information Table 8: SPICE parameters of the BFG310 DIE Sequence Parameter Value Unit 1 IS 16.17 aA
2 BF 210 -
4 VAF 50 V
5 IKF 59.83 mA 6 ISE 1.726 fA 7 NE 2.114 - 8B R 6 - 9N R 1 - 10 VAR 2.3 V
11 IKR 10 A
12 ISC 0 aA
13 NC 1.5 - 14 RB 3.6 Ω 15 RE 2.1 Ω 16 RC 1.6 Ω 17 CJE 115.6 fF 18 VJE 866.3 mV 19 MJE 0.285 - 20 CJC 68.18 fF
21 VJC 601 mV
22 MJC 0.123 -
23 XCJC 1 -
24 FC 0.7 - 25 TF 8.3 ps
26 XTF 10 -
27 VTF 1000 V
28 ITF 150 mA
29 PTF 0 deg
30 TR 0 ns
31 KF 0 -
32 AF 1 -
33 TNOM 25 °C
34 EG 1.014 eV
35 XTB 0 -
36 XTI 8 -
37 Q1.AREA 1 -
9397 750 14244 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 8 of 12 Philips Semiconductors BFG310/XR NPN 14 GHz wideband transistor Fig 9. Package equivalent circuit of SOT143R Table 9: List of components; seeFigure9 Designation Value Unit C CB 17 fF C BE 84 fF C CE 191 fF C_base_pad 67 fF C_emitter_pad 142 fF L B 0.95 nH LE 0.40 nH L1 0.12 nH L2 0.21 nH L3 0.06 nH BJT1 C_base_pad LB C CB CHIP C BE LE C CEC_emitter_pad 001aac155
9397 750 14244 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 9 of 12 Philips Semiconductors BFG310/XR NPN 14 GHz wideband transistor 9. Package outline Fig 10. Package outline SOT143R (SC-61AA) UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm 1.1 0.9 A 1 max 0.1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 H E ywvQ 2.5 2.1 0.55 0.25 0.45 0.25 e 1.9 1.7 Lp 0.1 0.10.2 bp 0.48 0.38 DIMENSIONS (mm are the original dimensions) SOT143R SC-61AA 99-09-13 04-11-16 0 1 2 mm scale Plastic surface mounted package; reverse pinning; 4 leads SOT143R D H E E AB v M A X A Lp Q detail X c y w M e B bp
9397 750 14244 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 10 of 12 Philips Semiconductors BFG310/XR NPN 14 GHz wideband transistor 10. Revision history Table 10: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BFG310_XR_1 20050202 Product data sheet - 9397 750 14244 -
Philips Semiconductors BFG310/XR NPN 14 GHz wideband transistor 9397 750 14244 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 2 February 2005 11 of 12 11. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions Short-form specification —The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 2 February 2005 Document number: 9397 750 14244 Published in The Netherlands Philips Semiconductors BFG310/XR NPN 14 GHz wideband transistor 15. Contents