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Product speciﬁcation File under Discrete Semiconductors, SC14

1995 Sep 12

NPN 8 GHz wideband transistor

1995 Sep 12 2

Philips Semiconductors Product speciﬁcation NPN 8 GHz wideband transistor BFG198

DESCRIPTION

NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities. PINNING PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector Fig.1 SOT223. age 4 123 MSB002 - 1Top view QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 20 V VCEO collector-emitter voltage open base −− 10 V IC DC collector current −− 100 mA Ptot total power dissipation up to Ts = 135°C (note 1) −− 1W hFE DC current gain I C = 50 mA; VCE =5V ; Tj=2 5°C4 0 9 0 − fT transition frequency I C = 50 mA; VCE = 8 V; f = 1 GHz; Tamb =2 5°C − 8 − GHz G UM maximum unilateral power gain IC = 50 mA; VCE = 8 V; f = 500 MHz; Tamb =2 5°C − 18 − dB IC = 50 mA; VCE = 8 V; f = 800 MHz; Tamb =2 5°C − 15 − dB Vo output voltage d im = −60 dB; IC = 70 mA; VCE =8V ; R L =7 5Ω ; Tamb =2 5°C; f(p+q−r)= 793.25 MHz − 700 − mV SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 100 mA Ptot total power dissipation up to Ts = 135°C (note 1) − 1W Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C

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Philips Semiconductors Product speciﬁcation NPN 8 GHz wideband transistor BFG198 THERMAL CHARACTERISTICS Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj=2 5°C unless otherwise speciﬁed. Note 1. G UM is the maximum unilateral power gain, assuming S12 is zero and 2. dim = −60 dB (DIN 45004B); IC = 70 mA; VCE = 8 V; RL =7 5Ω ; Tamb =2 5°C; Vp =V o at dim = −60 dB; Vq =V o −6 dB; fp = 445.25 MHz; Vr =V o −6 dB; fq = 453.25 MHz; fr = 455.25 MHz measured at f(p+q−r)= 443.25 MHz. 3. dim = −60 dB (DIN 45004B); IC = 70 mA; VCE = 8 V; RL =7 5Ω ; Tamb =2 5°C; Vp =V o at dim = −60 dB; fp = 795.25 MHz; Vq =V o −6 dB; fq = 803.25 MHz; Vr =V o −6 dB; fr = 805.25 MHz; measured at f(p+q−r)= 793.25 MHz. 4. IC = 50 mA; VCE = 8 V; Vo = 50 dBmV; f(p+q)= 810 MHz; fp = 250 MHz; fq = 560 MHz. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point up to Ts = 135°C (note 1) 40 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =5V −− 100 nA hFE DC current gain I C = 50 mA; VCE = 5 V 40 90 − C c collector capacitance I E =ie = 0; VCB = 8 V; f = 1 MHz − 1.5 − pF C e emitter capacitance I C =ic = 0; VEB = 0.5 V; f = 1 MHz − 4 − pF C re feedback capacitance I C = 0; VCE =8V ; f=1M H z − 0.8 − pF fT transition frequency I C = 50 mA; VCE = 8 V; f = 1 GHz; Tamb =2 5°C − 8 − GHz G UM maximum unilateral power gain; note 1 IC = 50 mA; VCE = 8 V; f = 500 MHz; Tamb =2 5°C − 18 − dB IC = 50 mA; VCE = 8 V; f = 800 MHz; Tamb =2 5°C − 15 − dB Vo output voltage note 2 − 750 − mV note 3 − 700 − mV d2 second order intermodulation distortion note 4 −− 55 − dB G UM 10 s21 1s 11 2–() 1s 22

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Philips Semiconductors Product speciﬁcation NPN 8 GHz wideband transistor BFG198 List of components (see test circuit) Note 1. Components C5, L1, L3, L4, and R2 are mounted on the underside of the PCB. The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (εr = 2.2); thickness1⁄16 inch; thickness of copper sheet 2 x 35µm; see Fig.2. DESIGNATION DESCRIPTION VALUE UNIT DIMENSIONS CATALOGUE NO. C2 multilayer ceramic capacitor 1.2 pF 2222 851 12128 C1, C4, C6, C7 multilayer ceramic capacitor 10 nF 2222 590 08627 C3 multilayer ceramic capacitor 10 nF 2222 851 12128 C5 (note 1) multilayer ceramic capacitor 10 nF 2222 629 08103 C8 multilayer ceramic capacitor 1.5 pF 2222 851 12158 L1 (note 1) 1.5 turns 0.4 mm copper wire int. dia. 3 mm; winding pitch 1 mm L2 microstripline 75 Ω length 22 mm; width 2.5 mm L3 (note 1) 0.4 mm copper wire ≈24 nH length 30 mm L4 (note 1) 0.4 mm copper wire ≈3.6 nH length 4 mm L5 microstripline 75 Ω length 19 mm; width 2.5 mm L6 Ferroxcube choke 5 µH 3122 108 20153 R1 metal ﬁlm resistor 10 Ω 2322 180 73103 R2 (note 1) metal ﬁlm resistor 220 Ω 2322 180 73221 R3, R4 metal ﬁlm resistor 30 Ω 2322 180 73309 Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit. handbook, full pagewidth MBB754 DUT /,/#01 VBB L1C1 input R3 R4 /#02/#03 output VCC = 8 V Ω Ω

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Philips Semiconductors Product speciﬁcation NPN 8 GHz wideband transistor BFG198 Fig.3 Intermodulation distortion and second order intermodulation distortion printed-circuit board. handbook, full pagewidth MEA968 input output VCCVBB L2 L5 R4 C5 L4L1 Ω Ω handbook, full pagewidth MEA966 60 mm 80 mm handbook, full pagewidth MEA967 80 mm 60 mm mounting screws M 2.5 (8x)

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Philips Semiconductors Product speciﬁcation NPN 8 GHz wideband transistor BFG198 Fig.4 Power derating curve. handbook, halfpage 0 50 100 200 0.8 0.6 0.2 0.4 MBB752 150 T ( C)os P tot (W) 1.0 1.2 Fig.5 DC current gain as a function of collector current. VCE = 5 V; Tj=2 5°C. handbook, halfpage 160 120 40 120 MBB267 I (mA)C h FE Fig.6 Feedback capacitance as a function of collector-base voltage. IE = 0; f = 1 MHz; Tj=2 5°C. handbook, halfpage 1.2 0.8 0.4 42 0 MBB751 81 2 1 6 V (V)CB C re (pF) Fig.7 Transition frequency as a function of collector current. VCE = 8 V; f = 1 GHz; Tamb =2 5°C. handbook, halfpage 04 08 0 MBB499 120I (mA)C (GHz) Tf

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Philips Semiconductors Product speciﬁcation NPN 8 GHz wideband transistor BFG198 Fig.8 Maximum gain as a function of frequency. IC = 50 mA; VCE = 8 V; Tamb =2 5°C; handbook, halfpage40 MBB753 102 103 104 f (MHz) G UM (dB) Fig.9 Intermodulation distortion as a function of collector current. VCE = 8 V; Vo = 750 mV; Tamb =2 5°C; f(p+q−r)= 443.25 MHz. handbook, halfpage 20 120 MBB498 40 60 80 100 d im (dB) I (mA)C Fig.10 Intermodulation distortion as a function of collector current. VCE = 8 V; Vo = 700 mV; Tamb =2 5°C; f(p+q)= 793.25 MHz. handbook, halfpage 20 120 MBB266 40 60 80 100 d im (dB) I (mA)C Fig.11 Second order intermodulation distortion as a function of collector current. VCE = 8 V; Vo = 50 dBmV; Tamb =2 5°C f(p+q)= 450 MHz. handbook, halfpage 20 120 MBB497 40 60 80 100 d 2 (dB) I (mA)C

1995 Sep 12 8

Philips Semiconductors Product speciﬁcation NPN 8 GHz wideband transistor BFG198 Fig.12 Second order intermodulation distortion as a function of collector current. VCE = 8 V; Vo = 50 dBmV; Tamb =2 5°C f(p+q)= 810 MHz. handbook, halfpage 20 120 MBB268 40 60 80 100 d 2 (dB) I (mA)C

1995 Sep 12 9

Philips Semiconductors Product speciﬁcation NPN 8 GHz wideband transistor BFG198 Fig.13 Common emitter input reflection coefficient (S11). IC = 50 mA; VCE = 8 V; Tamb =2 5°C; Zo =5 0Ω . handbook, full pagewidth MBB494 100 250 100 250 + j – j

2 GHz

40 MHz

Fig.14 Common emitter forward transmission coefficient (S21). IC = 50 mA; VCE = 8 V; Tamb =2 5°C. handbook, full pagewidth 180 MBB496 o ϕ ϕ 30o 60o 90o 120o 150o 150o 120o 90o 60o 30o 80 40100 60 20

1995 Sep 12 10

Philips Semiconductors Product speciﬁcation NPN 8 GHz wideband transistor BFG198 Fig.15 Common emitter reverse transmission coefficient (S12). IC = 50 mA; VCE = 8 V; Tamb =2 5°C. handbook, full pagewidth 180 MBB495 o ϕ ϕ 30o 60o 90o 120o 150o 150o 120o 90o 60o 30o Fig.16 Common emitter output reflection coefficient (S22). IC = 50 mA; VCE = 8 V; Tamb =2 5°C; Zo =5 0Ω . handbook, full pagewidth MBB493 100 250 100 250 + j – j

1995 Sep 12 11

Philips Semiconductors Product speciﬁcation NPN 8 GHz wideband transistor BFG198 PACKAGE OUTLINE Fig.17 SOT223. Dimensions in mm. handbook, full pagewidth 6.7 6.3 0.95 0.85 2.3 0.80 0.60 4.6 3.1 2.9 3.7 3.3 7.3 6.7 A B 0.2 A 1.80 max 1616o max 10o max 0.10 0.01 0.32 0.24 123 MSA035 - 1(4x) 0.1 BM M S seating plane 0.1 S o

1995 Sep 12 12

Philips Semiconductors Product speciﬁcation NPN 8 GHz wideband transistor BFG198 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations. Short-form speciﬁcation The data in this speciﬁcation is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

Product Information

BFG198 specifications and overview.

Summary

NPN 8 GHz wideband transistor

Description

NPN 8 GHz wideband transistor

Source title BFG198_15 Datasheet(PDF) - Quanzhou Jinmei Electronic Co.,Ltd.

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