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Product speciﬁcation File under discrete semiconductors, SC14

1995 Sep 13

NPN 7GHz wideband transistor

1995 Sep 13 2

Philips Semiconductors Product speciﬁcation NPN 7GHz wideband transistor BFG135

DESCRIPTION

NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level. The distribution of the active areas across the surface of the device gives an excellent temperature profile. PINNING PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector Fig.1 SOT223. age 4 123 MSB002 - 1Top view QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 25 V VCEO collector-emitter voltage open base −− 15 V IC DC collector current −− 150 mA Ptot total power dissipation up to Ts = 145°C (note 1) −− 1W hFE DC current gain I C = 100 mA; VCE = 10 V; Tj=2 5°C 80 130 − fT transition frequency I C = 100 mA; VCE = 10 V; f = 1 GHz; Tamb =2 5°C − 7 − GHz G UM maximum unilateral power gain IC = 100 mA; VCE = 10 V; f = 500 MHz; Tamb =2 5°C − 16 − dB IC = 100 mA; VCE = 10 V; f = 800 MHz; Tamb =2 5°C − 12 − dB Vo output voltage d im = −60 dB; IC = 100 mA; VCE =1 0V ; R L =7 5Ω ; Tamb =2 5°C; f(p+q−r)= 793.25 MHz − 850 − mV SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2V IC DC collector current − 150 mA Ptot total power dissipation up to Ts = 145°C (note 1) − 1W Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C

1995 Sep 13 3

Philips Semiconductors Product speciﬁcation NPN 7GHz wideband transistor BFG135 THERMAL CHARACTERISTICS Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj=2 5°C unless otherwise speciﬁed. Notes 1. dim = −60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL =7 5Ω ; Tamb =2 5°C; Vp =V o at dim = −60 dB; fp = 445.25 MHz; Vq =V o −6 dB; fq = 453.25 MHz; Vr =V o −6 dB; fr = 455.25 MHz; measured at f(p+q−r)= 443.25 MHz. 2. dim = −60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL =7 5Ω ; Tamb =2 5°C; Vp =V o at dim = −60 dB; fp = 795.25 MHz; Vq =V o −6 dB; fq = 803.25 MHz; Vr =V o −6 dB; fr = 805.25 MHz; measured at f(p+q−r)= 793.25 MHz. SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE R th j-s thermal resistance from junction to soldering point up to Ts = 145°C (note 1) 30 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =1 0V −− 1 µA hFE DC current gain I C = 100 mA; VCE = 10 V 80 130 − C c collector capacitance I E =ie = 0; VCB = 10 V; f = 1 MHz − 2 − pF C e emitter capacitance I C =ic = 0; VEB = 0.5 V; f = 1 MHz − 7 − pF C re feedback capacitance I C = 0; VCE = 10 V; f = 1 MHz − 1.2 − pF fT transition frequency I C = 100 mA; VCE = 10 V; f = 1 GHz; Tamb =2 5°C − 7 − GHz G UM maximum unilateral power gain IC = 100 mA; VCE =1 0V ; f = 500 MHz; Tamb =2 5°C − 16 − dB IC = 100 mA; VCE =1 0V ; f = 800 MHz; Tamb =2 5°C − 12 − dB Vo output voltage note 1 − 900 − mV note 2 − 850 − mV d2 second order intermodulation distortion IC = 90 mA; VCE =1 0V ; VO = 50 dBmV; Tamb =2 5°C; f(p+q)= 450 MHz; fp = 50 MHz; fq = 400 MHz −− 58 − dB IC = 90 mA; VCE =1 0V ; VO = 50 dBmV; Tamb =2 5°C; f(p+q)= 810 MHz; fp = 250 MHz; fq = 560 MHz −− 53 − dB

1995 Sep 13 4

Philips Semiconductors Product speciﬁcation NPN 7GHz wideband transistor BFG135 List of components (see test circuit) Note 1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB. The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (εr = 2.2); thickness 1⁄16 inch; thickness of copper sheet1⁄32 inch. DESIGNATION DESCRIPTION VALUE UNIT DIMENSIONS CATALOGUE NO. C1, C3, C5, C6 multilayer ceramic capacitor 10 nF 2222 590 08627 C2, C7 multilayer ceramic capacitor 1 pF 2222 851 12108 C4 (note 1) miniature ceramic plate capacitor 10 nF 2222 629 08103 L1 microstripline 75 Ω length 7 mm; width 2.5 mm L2 microstripline 75 Ω length 22mm; width 2.5 mm L3 (note 1) 1.5 turns 0.4 mm copper wire int. dia. 3 mm; winding pitch 1 mm L4 microstripline 75 Ω length 19 mm; width 2.5 mm L5 Ferroxcube choke 5 µH 3122 108 20153 L6 (note 1) 0.4 mm copper wire ≈25 nH length 30 mm R1 metal ﬁlm resistor 10 k Ω 2322 180 73103 R2 (note 1) metal ﬁlm resistor 200 Ω 2322 180 73201 R3, R4 metal ﬁlm resistor 27 Ω 2322 180 73279 Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit. handbook, full pagewidth MBB284 DUT VBB L1C1 input R3 R4 /#02/#03 output VCC Ω Ω

1995 Sep 13 5

Philips Semiconductors Product speciﬁcation NPN 7GHz wideband transistor BFG135 Fig.3 Intermodulation distortion test printed-circuit board. handbook, full pagewidth MBB299 input output VCCVBB L1 L2 L4 R4 C4 L3Ω Ω andbook, full pagewidth MBB298 80 mm 60 mm handbook, full pagewidth MBB297

1995 Sep 13 6

Philips Semiconductors Product speciﬁcation NPN 7GHz wideband transistor BFG135 Fig.4 Power derating curve. handbook, halfpage 0 50 100 200 0.8 0.6 0.2 0.4 MBB300 150 T ( C)os P tot (W) 1.0 1.2 Fig.5 DC current gain as a function of collector current. handbook, halfpage 160 120 40 80 160 MBB294 120 I (mA)C FEh VCE = 10 V; Tj=2 5°C. Fig.6 Feedback capacitance as a function of collector-base voltage. IE = 0; f = 1 MHz; Tj=2 5°C. handbook, halfpage 42 0 MBB295 81 2 1 6 V (V)CB C re (pF) Fig.7 Transition frequency as a function of collector current. VCE = 10 V; f = 1 GHz; Tamb =2 5°C. handbook, halfpage 0 40 80 160 MBB296 120 I (mA)C (GHz) Tf

1995 Sep 13 7

Philips Semiconductors Product speciﬁcation NPN 7GHz wideband transistor BFG135 Fig.8 Intermodulation distortion as a function of collector current. VCE = 10 V; Vo = 900 mV; Tamb =2 5°C; f(p+q−r)= 443.25 MHz. handbook, halfpage 20 120 MBB292 40 60 80 100 I (mA)C d (dB) im Fig.9 Intermodulation distortion as a function of collector current. VCE = 10 V; Vo = 850 mV; Tamb =2 5°C; f(p+q−r)= 793.25 MHz. handbook, halfpage 20 120 MBB293 40 60 80 100 I (mA)C d (dB) im Fig.10 Second order intermodulation distortion as a function of collector current. VCE = 10 V; Vo = 50 dBmV; Tamb =2 5°C; f(p+q)= 450 MHz. handbook, halfpage 20 120 MBB291 40 60 80 100 d 2 (dB) I (mA)C Fig.11 Second order intermodulation distortion as a function of collector current. VCE = 10 V; Vo = 50 dBmV; Tamb =2 5°C f(p+q)= 810 MHz. handbook, halfpage 20 120 MBB290 40 60 80 100 d 2 (dB) I (mA)C

1995 Sep 13 8

Philips Semiconductors Product speciﬁcation NPN 7GHz wideband transistor BFG135 Fig.12 Load impedance as a function of output power. VCE = 7.5 V; f = 900 MHz. handbook, halfpage 0 0.25 1.0 –10 MEA951 0.50 POUT (W) 0.75 Z (Ω ) L R L X L Fig.13 Load impedance as a function of output power. VCE = 10 V; f = 900 MHz. handbook, halfpage 0 0.5 MEA952

1 POUT (W)

1.5 Z (Ω ) L R L X L Fig.14 Load impedance as a function of output power. VCE = 12.5 V; f = 900 MHz. handbook, halfpage 0 0.5 MEA953 1.5 Z (Ω ) L R L X L Fig.15 Input impedance as a function of output power. VCE = 7.5 V; f = 900 MHz. handbook, halfpage 0 0.25 1.0 MEA948 0.50 POUT (W) 0.75 Z (Ω ) i ri x i

1995 Sep 13 9

Philips Semiconductors Product speciﬁcation NPN 7GHz wideband transistor BFG135 Fig.16 Input impedance as a function of output power. VCE = 10 V; f = 900 MHz. handbook, halfpage 0 1.5 MEA949 0.5 POUT (W) Z (Ω ) i ri xi Fig.17 Input impedance as a function of output power. VCE = 12.5 V; f = 900 MHz. handbook, halfpage 0 1.5 MEA950 0.5 POUT (W) Z (Ω ) i ri x i Fig.18 Efficiency as a function of output power. f = 900 MHz. handbook, halfpage 0 0.5 1.5 MEA947 η (%) POUT (W) V =CE 12.5 V 10 V7.5 V Fig.19 Output power as a function of input power. f = 900 MHz. handbook, halfpage 0 100 300 1.5 0.5 MEA945 200 P OUT (W) P IN (mW) V =CE 12.5 V 10 V 7.5 V

1995 Sep 13 10

Philips Semiconductors Product speciﬁcation NPN 7GHz wideband transistor BFG135 Fig.20 Power gain as a function of output power. f = 900 MHz. handbook, halfpage 0 0.5 1.5 MEA946 G p (dB) POUT (W) V =CE 12.5 V 10 V 7.5 V Fig.21 Maximum unilateral power gain as a function of frequency. IC = 100 mA; VCE = 10 V; Tamb =2 5°C. handbook, halfpage40 MBB289 102 103 104 f (MHz) G UM (dB)

1995 Sep 13 11

Philips Semiconductors Product speciﬁcation NPN 7GHz wideband transistor BFG135 Fig.22 Common emitter input reflection coefficient (S11). IC = 100 mA; VCE = 10 V; Tamb =2 5°C; Zo =5 0Ω.. handbook, full pagewidth 100 250 100 250 + j – j MBB288 10 25 50 100 250 Fig.23 Common emitter forward transmission coefficient (S21). IC = 100 mA; VCE = 10 V; Tamb =2 5°C. handbook, full pagewidth MBB286 30o 60o 90o 120o 150o 180 o 150o 120o 90o 60o 30o 40 203050 10

1995 Sep 13 12

Philips Semiconductors Product speciﬁcation NPN 7GHz wideband transistor BFG135 Fig.24 Common emitter reverse transmission coefficient (S12). IC = 100 mA; VCE = 10 V; Tamb =2 5°C. handbook, full pagewidth MBB285 30o 60o 90o 120o 150o 180 o 150o 120o 90o 60o 30o Fig.25 Common emitter output reflection coefficient (S22). IC = 100 mA; VCE = 10 V; Tamb =2 5°C; Zo =5 0Ω.. handbook, full pagewidth 100 250 100 250 + j – j MBB287 10 25 50 100 250

Product Information

BFG135 specifications and overview.

Summary

NPN 7GHz wideband transistor

Description

NPN 7GHz wideband transistor

Source title BFG135_15 Datasheet(PDF) - Quanzhou Jinmei Electronic Co.,Ltd.

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