BFG10X_15 JMNIC | Alldatasheet

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Product specification Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14

1995 Aug 31

BFG10; BFG10/X NPN 2 GHz RF power transistor

1995 Aug 31 2

Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X

FEATURES

  • High power gain
  • High efficiency
  • Small size discrete power amplifier
  • 1.9 GHz operating area
  • Gold metallization ensures excellent reliability.

APPLICATIONS

  • Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz.

DESCRIPTION

NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. PINNING PIN DESCRIPTION BFG10 (see Fig.1) 1 collector 2 base 3 emitter 4 emitter BFG10/X (see Fig.1) 1 collector 2 emitter 3 base 4 emitter Fig.1 SOT143. handbook, 2 columns Top view MSB014 MARKING TYPE NUMBER CODE BFG10 N70 BFG10/X N71 QUICK REFERENCE DATA RF performance at Tamb =2 5°C in a common-emitter test circuit (see Fig.7). LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector pin. MODE OF OPERATION f (GHz) VCE (V) PL (mW) G p (dB) ηc (%) Pulsed, class-AB, duty cycle: < 1 : 8 1.9 3.6 200 ≥5 ≥50 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 8V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 250 mA IC(AV) average collector current − 250 mA Ptot total power dissipation up to Ts =6 0°C; see Fig.2; note 1− 400 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C

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Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X THERMAL CHARACTERISTICS Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj=2 5°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point up to Ts =6 0°C; note 1; Ptot= 400 mW

290 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 0.1 mA 20 − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 5 mA 8 − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.1 mA 2.5 − V ICES collector leakage current V CE =5V ; VBE =0 − 100 µA hFE DC current gain I C = 50 mA; VCE =5V 2 5 − C c collector capacitance I E =ie = 0; VCB = 3.6 V; f = 1 MHz − 3p F C re feedback capacitance I C = 0; VCE = 3.6 V; f = 1 MHz − 2p F Fig.2 Power derating curve handbook, halfpage 0 50 100 200 200 MLC818 150 T ( C)o s P tot (mW) 300 500 400 100 IC = 0; f = 1 MHz. Fig.3 Collector capacitance as a function of collector-base voltage; typical values. handbook, halfpage MLC819 01 0 48 2.0 1.5 1.0 0.5 C c (pF) V CB (V)

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Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X

APPLICATION INFORMATION

RF performance at Tamb =2 5°C in a common-emitter test circuit (see Fig.7). Ruggedness in class-AB operation The BFG10 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated output power under pulsed conditions up to a supply voltage of 7 V, f = 1.9 GHz and a duty cycle of 1 : 8. MODE OF OPERATION f (GHz) VCE (V) ICQ (mA) PL (mW) G p (dB) ηc (%) Pulsed, class-AB, duty cycle: < 1 : 8 1.9 3.6 1 200 >5 >50 typ. 7 typ. 60 Pulsed, class-AB operation. VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8. Circuit optimized for PL = 200 mW. Fig.4 Power gain and efficiency as functions of load power; typical values. handbook, halfpage 0 500 MLC820 100 100 200 300 400 G p G p (dB) P (mW)L c (%) η cη Fig.5 Load power as a function of drive power; typical values. Pulsed, class-AB operation. VCE = 3.6 V; VBE = 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8. Circuit optimized for PL = 200 mW. handbook, halfpage 0 50 100 150 500 400 MLC821 300 200 100 P L (mW) P (mW)D

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Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X SPICE parameters for the BFG10 crystal Note 1. These parameters have not been extracted, the default values are shown. SEQUENCE No. PARAMETER VALUE UNIT 1 IS 2.714 fA 2 BF 102.8 − 3 NF 0.998 − 4 VAF 28.12 V 5 IKF 6.009 A 6 ISE 403.2 pA 7 NE 2.937 − 8 BR 31.01 − 9 NR 0.999 − 10 VAR 2.889 V 11 IKR 0.284 A 12 ISC 1.487 fA 13 NC 1.100 − 14 RB 3.500 Ω 15 IRB 1.000 µA 16 RBM 3.500 Ω 17 RE 0.217 Ω 18 RC 0.196 Ω (1) XTB 0.000 − 20(1) EG 1.110 eV 21(1) XTI 3.000 − 22 CJE 5.125 pF 23 VJE 0.600 V 24 MJE 0.367 − 25 TF 12.07 ps 26 XTF 99.40 − 27 VTF 7.220 V 28 ITF 3.950 A 29 PTF 0.000 deg 30 CJC 2.327 pF 31 VJC 0.668 V 32 MJC 0.398 − 33 XCJC 0.160 − (1) TR 0.000 ns 35(1) CJS 0.000 F 36(1) VJS 750.0 mV 37(1) MJS 0.000 − 38 FC 0.652 − List of components(see Fig.6) DESIGNATION VALUE UNIT C be 84 fF C cb 17 fF C ce 191 fF L1 0.12 nH L2 0.21 nH L3 0.06 nH L B 0.95 nH LE 0.40 nH QL B = 50; QLE = 50; QLB,E( f )=Q LB,E√(f/fc); fc = scaling frequency = 100 MHz. Fig.6 Package equivalent circuit SOT143. handbook, halfpage MBC964 B E CB' C' L B LE L1 L2 C cb C be ce C

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Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X Test circuit information handbook, full pagewidth MLC822 /,/, /,/,/,/, /,/,/,/, C11 L3 L5 C10 C14, C15, C16 C12 C13 C2, C3, C4, C5 C6, C7, R1 T1 L10 V bias 50 Ω input 50 Ω output DUT /,/, /,/, /,/, /,/, /,/, /,/, L7 VS Fig.7 Common-emitter test circuit for class-AB operation at 1.9 GHz.

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Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X List of components used in test circuit(see Fig.7) Notes 1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 2. The striplines are on a 1⁄32 inch double copper-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 6). COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. C1, C9, C10, C11 multilayer ceramic chip capacitor; note 1 24 pF C2, C3, C4, C5, C6, C7 multilayer ceramic chip capacitor; note 1 0.86 pF C8 multilayer ceramic chip capacitor; note 1 1.1 pF C12, C13 electrolytic capacitor 470 µF; 10 V 2222 031 34471 C14, C15, C16 multilayer ceramic chip capacitor; note 1 10 nF L1 stripline; note 2 length 28.5 mm width 0.93 mm L2 stripline; note 2 length 2.3 mm width 0.93 mm L3 stripline; note 2 length 3.1 mm width 0.93 mm L4 stripline; note 2 length 3.3 mm width 0.93 mm L5 stripline; note 2 length 16.3 mm width 0.93 mm L6 stripline; note 2 length 10 mm width 0.93 mm L7 stripline; note 2 length 4.4 mm width 0.4 mm L8 stripline; note 2 length 19.3 mm width 0.93 mm L9 stripline; note 2 length 19.7 mm width 0.4 mm L10 micro choke T1 BD228 R1 metal film resistor 20 Ω; 0.4 W 2322 157 10209 R2 metal film resistor 530 Ω; 0.4 W 2322 157 15301

1995 Aug 31 8

Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X Fig.8 Printed-circuit board and component lay-out for common-emitter test circuit in Fig.7. Dimensions in mm. The components are situated on one side of the copper-clad PTFE microfibre-glass board, the other side is not etched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. handbook, full pagewidth MLC823 CollectorBase CollectorBase C3 C5 C7 C8 L2 L3 C10 C11 C12 C13 V C14 C15 C16 L7L8 L10 bias VS

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Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X PACKAGE OUTLINE Fig.9 SOT143. Dimensions in mm. handbook, full pagewidth MBC845 max o max o max o 1.1 max 0.75 0.60 0.150 0.090 0.1 max M0.1 AB0 0.10.48 TOP VIEW 1.4 1.2 2.5 max 3.0 2.8 M0.2 ABA B 1.9 0.10.88 1.7

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Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG10; BFG10/X DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.