BFG10WX_15 JMNIC | Alldatasheet

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Product specification File under Discrete Semiconductors, SC14

1995 Sep 22

1995 Sep 22 2

Philips Semiconductors Product specification UHF power transistor BFG10W/X

FEATURES

  • High efficiency
  • Small size discrete power amplifier
  • 900 MHz and 1.9 GHz operating areas
  • Gold metallization ensures excellent reliability.

APPLICATIONS

  • Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz.

DESCRIPTION

NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. PINNING PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter Fig.1 SOT343. Marking code: T5. fpage Top view MBK523 QUICK REFERENCE DATA RF performance at Tamb =2 5°C in a common-emitter test circuit. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. MODE OF OPERATION f (GHz) VCE (V) PL (mW) G p (dB) ηc (%) Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms 1.9 3.6 200 ≥5 ≥50 Pulsed, class-AB, duty cycle: < 1 : 8; tp = 4.6 ms 0.9 6 650 ≥10 ≥50 0.9 6 360 ≥12.5 ≥50 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 2.5 V IC collector current (DC) − 250 mA IC(AV) average collector current − 250 mA Ptot total power dissipation up to T s = 102°C; note 1 − 400 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point up to Ts = 102°C; note 1; Ptot= 400 mW

180 K/W

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Philips Semiconductors Product specification UHF power transistor BFG10W/X CHARACTERISTICS Tj=2 5°C (unless otherwise specified). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 0.1 mA 20 − V V(BR)CEO collector-emitter breakdown voltage open base; IC =5m A 1 0 − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.1 mA 2.5 − V ICES collector cut-off current V CE =6V ; VBE =0 − 100 µA hFE DC current gain I C = 50 mA; VCE =5V 2 5 − C c collector capacitance I E =ie = 0; VCB =6V ; f=1M H z − 3p F C re feedback capacitance I C = 0; VCE = 6 V; f = 1 MHz − 2p F Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values. handbook, full pagewidth MBG431 10−510−6 10−4 10−3 10−2 10−1 1 103 102 Zth j-a (K/W) tp (s) δ = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 tp T P t tp Tδ =

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Philips Semiconductors Product specification UHF power transistor BFG10W/X Fig.3 Collector capacitance as a function of collector-base voltage. handbook, halfpage MLC819 01 0 48 2.0 1.5 1.0 0.5 C c (pF) V CB (V)

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Philips Semiconductors Product specification UHF power transistor BFG10W/X

APPLICATION INFORMATION

RF performance at Tamb =2 5°C in a common-emitter test circuit. Ruggedness in class-AB operation The BFG10W/X is capable of withstanding a load mismatch corresponding to VSWR=6:1 through all phases under pulsed conditions up to a supply voltage of 8.6 V under the conditions: 900 MHz; 650 mW; tp = 4.6 ms; duty cycle of 1 : 8 and up to a supply voltage of 5.5 V under the conditions: 1.9 GHz; 200 mW; tp = 10 ms; duty cycle of 1 : 2. MODE OF OPERATION f (GHz) VCE (V) PL (mW) G p (dB) ηc (%) Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms 1.9 3.6 200 ≥5; typ. 7 ≥50; typ. 60 Pulsed, class-AB, duty cycle: < 1 : 8; tp = 5 ms 0.9 6 650 ≥10 ≥50 0.9 6 360 ≥12.5 ≥50 Pulsed, class-AB operation. VCE = 3.6 V; f = 1.9 GHz; duty cycle < 1 : 2. Circuit optimized for PL = 200 mW. Fig.4 Power gain and efficiency as functions of load power; typical values. handbook, halfpage 0 500 MLC820 100 100 200 300 400 G p G p (dB) P (mW)L c (%) η cη Fig.5 Power gain and efficiency as functions of load power; typical values. Pulsed, class-AB operation. VCE = 6 V; f = 900 MHz; duty cycle < 1 : 8. Circuit optimized for PL = 600 mW. handbook, halfpage 0.3 MBG194 0.5 0.7 0.9 1.1 G p G p(dB) P (mW)L c (%) η cη

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Philips Semiconductors Product specification UHF power transistor BFG10W/X List of components(see Fig.6) Notes 1. V BE at 1 mA must be 0.65 V. 2. American Technical Ceramics type 100A or capacitor of same quality. 3. Resonant at 1900 MHz. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. TR1 bias transistor, BC548 or equivalent note 1 C1, C4, C7 capacitor; notes 2 and 3 120 pF C2 capacitor; note 2 6.8 pF C3 capacitor; note 2 0.5 pF C5 capacitor; note 2 1.2 pF C6 capacitor; note 2 1.9 pF C8 Philips multilayer capacitor 1 nF, 10 V C9 Philips capacitor 1500 µF, 10 V 2222 032 14152 L1 6 turns enamelled 0.7 mm copper wire length 3.5 mm L4 2 turns enamelled 0.7 mm copper wire length 3 mm L2, L3 RF choke, Philips 4312 020 36690 R1 metal film resistor 275 Ω R2 metal film resistor 100 Ω R3 metal film resistor 10 Ω Fig.6 Class-AB test circuit at f = 900 MHz. handbook, full pagewidth MBG428 DUT +Vbias +VCC TR1 C2 C3 C5 L4L1 PCB RT5880, thickness 0.79 mm.

1995 Sep 22 7

Philips Semiconductors Product specification UHF power transistor BFG10W/X List of components(see Fig.7) Notes 1. V BE at 1 mA must be 0.65 V. 2. American Technical Ceramics type 100A or capacitor of same quality. 3. Resonant at 1900 MHz. COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No. TR1 bias transistor, BC548 or equivalent note 1 C1, C6, C7, C8 capacitor; notes 2 and 3 24 pF C2 capacitor; note 2 0.4 pF C3 capacitor; note 2 2.4 pF C4 capacitor; note 2 0.5 pF C5 capacitor; note 2 1.2 pF C9, C10 Philips capacitor 1500 µF, 10 V 2222 032 14152 L1, L2 RF choke, Philips 4330 030 36301 R1, R2 metal film resistor 75 Ω R3, R4 metal film resistor 10 Ω Fig.7 Class-AB test circuit at f = 1.9 GHz. handbook, full pagewidth MBG429 DUT +Vbias R1 R2 L1 C2 C3 C4 C5 C10 TR1 +VCC PCB RT5880, thickness 0.79 mm.

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Philips Semiconductors Product specification UHF power transistor BFG10W/X PACKAGE OUTLINE Fig.8 SOT343. Dimensions in mm. handbook, full pagewidth 0.3 0.1 0.25 0.10 0.2 0.1 max 1.00 max MSB374 1.4 1.2 2.2 1.8 B A 1.35 1.15 0.4 0.2 BM0.2AM0.2 2.2 2.0 0.7 0.5

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Philips Semiconductors Product specification UHF power transistor BFG10W/X DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.