BF998WR | DigiCamel IC Datasheet

Online Datasheet

Read BF998WR online.

BF998WR_15 JMNIC | Alldatasheet

Document overview

Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 12

Technical content

Product speciﬁcation Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07

1997 Sep 05

N-channel dual-gate MOS-FET

1997 Sep 05 2

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FET BF998WR

FEATURES

High forward transfer admittance
Short channel transistor with high forward transfer admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz.

APPLICATIONS

VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment.

DESCRIPTION

Depletion type field-effect transistor in a plastic microminiature SOT343R package with source and substrate interconnected. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PINNING PIN SYMBOL DESCRIPTION 1 s, b source 2 d drain 2 gate 2 4g 1 gate 1 Fig.1 Simplified outline (SOT343R) and symbol. Marking code: MB. MAM198Top view s,b d QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage −− 12 V ID drain current −− 30 mA Ptot total power dissipation −− 300 mW Tj operating junction temperature −− 150 °C yfs forward transfer admittance − 24 − mS C ig1-s input capacitance at gate 1 − 2.1 − pF C rs reverse transfer capacitance f=1M H z − 25 − fF F noise ﬁgure f = 800 MHz − 1 − dB

1997 Sep 05 3

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FET BF998WR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on a printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 12 V ID drain current − 30 mA IG1 gate 1 current −± 10 mA IG2 gate 2 current −± 10 mA Ptot total power dissipation up to T amb =4 5°C; see Fig.2; note 1− 300 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − +150 °C Fig.2 Power derating curve. handbook, halfpage 0 50 100 200 MLD154 150 400 200 300 100 Ptot (mW) T ( C)amb o

1997 Sep 05 4

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FET BF998WR THERMAL CHARACTERISTICS Notes 1. Device mounted on a printed-circuit board. 2. T s is the temperature at the soldering point of the source lead. STATIC CHARACTERISTICS Tj=2 5°C; unless otherwise speciﬁed. DYNAMIC CHARACTERISTICS Common source; Tamb =2 5°C; VG2-S = 4 V; ID = 10 mA; VDS = 8 V; unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient note 1 350 K/W R th j-s thermal resistance from junction to soldering point note 2; Ts =9 0°C 200 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)G1-SS gate 1-source breakdown voltage VG2-S =V DS = 0; IG1-S = 10 mA 6 20 V V(BR)G2-SS gate 2-source breakdown voltage VG1-S =V DS = 0; IG2-S = 10 mA 6 20 V V(P)G1-S gate 1-source cut-off voltage V G2-S =4V ; VDS =8V ; ID =2 0µA −− 2.5 V V(P)G2-S gate 2-source cut-off voltage V G1-S = 0; VDS =8V ; ID =2 0µA −− 2V IDSS drain-source current V G2-S =4V ; VDS =8V ; VG1-S =0 2 1 8 m A IG1-SS gate 1 cut-off current V G2-S =V DS = 0; VG1-S =5V − 50 nA IG2-SS gate 2 cut-off current V G1-S =V DS = 0; VG2-S =5V − 50 nA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT yfs forward transfer admittance pulsed; Tj=2 5°C2 2 2 5 − mS C ig1-s input capacitance at gate 1 f = 1 MHz − 2.1 2.5 pF C ig2-s input capacitance at gate 2 f = 1 MHz − 1.2 − pF C os drain-source capacitance f = 1 MHz − 1.05 − pF C rs reverse transfer capacitance f = 1 MHz − 25 − fF F noise ﬁgure f = 200 MHz; G S = 2 mS; BS =B Sopt − 0.6 − dB f = 800 MHz; GS = 3.3 mS; BS =B Sopt − 1 − dB

1997 Sep 05 5

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FET BF998WR Fig.3 Transfer characteristics; typical values. VDS =8V . Tamb =2 5°C. MGC471 ID (mA) V (V)G1 S V = 4 V 3 V 2 V 1 V 0 V G2 S Fig.4 Output characteristics; typical values. VG2-S =4V . Tamb =2 5°C. 21 0 MGC470 468 ID (mA) V (V)DS 0.4 V 0.3 V 0.2 V 0.1 V −0.1 V 0 V V = G1 S −0.2 V −0.3 V −0.4 V −0.5 V VDS = 8 V; VG2 = 4 V; Tamb =2 5°C. Fig.5 Drain current as a function of gate 1 voltage; typical values. −1600 400 MGC472 −1200 −800 −400 0 max typ min ID (mS) V (mV)G1 Fig.6 Forward transfer admittance as a function of drain current; typical values. VDS = 8 V; Tamb =2 5°C. 02 0 MGC473 4 8 12 16 yfs (mS) I (mA)D V = 0 VG2 − S 0.5 V 4 V 3 V 2 V 1 V

1997 Sep 05 6

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FET BF998WR Fig.7 Forward transfer admittance as a function of gate 1 voltage; typical values. VDS = 8 V; Tamb =2 5°C. −11 MGC474 V (V)G1-S yfs (mS) 3 V 2 V 1 V 0 V V = 4 VG2 S Fig.8 Output capacitance as a function of drain-source voltage; typical values. VG2-S = 4 V; f = 1 MHz; Tamb =2 5°C. 41 4 1.5 1.0 1.1 MGC475 1.2 1.3 1.4 6 8 10 12 VDS (V) C os (pF) 12 mA 10 mA 8 mA ID = Fig.9 Gate 1 input capacitance as a function of gate 1-source voltage; typical values. VDS = 8 V; VG2-S = 4 V; f = 1 MHz; Tamb =2 5°C. −2.4 −1.6 −0.8 0.8 2.4 1.4 2.2 MGC476 2.0 1.8 1.6 C is (pF) V (mV)G1-S Fig.10 Gate 1 input capacitance as a function of gate 2-source voltage; typical values. VDS = 8 V; VG1-S = 0 V; f = 1 MHz; Tamb =2 5°C. 642 −2 2.4 2.3 2.1 2.0 2.2 MGC477 C is (pF) V (V)G2-S

1997 Sep 05 7

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FET BF998WR Fig.11 Input admittance as a function of the frequency; typical values. VDS = 8 V; VG2-S =4V . ID = 10 mA; Tamb =2 5°C. 103 MGC466 10210 10 2 10 1 yis (mS) f (MHz) bis gis VDS = 8 V; VG2-S =4V . ID = 10 mA; Tamb =2 5°C. Fig.12 Reverse transfer admittance and phase as a function of frequency; typical values. 103 MGC467 10210 10 3 10 2 yrs 10 3 (µS) f (MHz) rs yrs (deg) rsϕ ϕ Fig.13 Forward transfer admittance and phase as a function of frequency; typical values. VDS = 8 V; VG2-S =4V . ID = 10 mA; Tamb =2 5°C. 103 MGC468 10210 10 2 yfs (mS) yfs f (MHz) (deg) fs fsϕ ϕ Fig.14 Output admittance as a function of the frequency; typical values. VDS = 8 V; VG2-S =4V . ID = 10 mA; Tamb =2 5°C. 103 MGC469 10210 10 1 10 2 yos (mS) f (MHz) bos gos

1997 Sep 05 8

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FET BF998WR Fig.15 Gain control testcircuit at f = 200 MHz. VDD = 12 V; GS = 2 mS; GL = 0.5 mS. L1 = 45 nH; 4 turns 0.8 mm copper wire, internal diameter 4 mm. L2 = 160 nH; 3 turns 0.8 mm copper wire, internal diameter 8 mm. Tapped at approximately half a turn from the cold side, to adjust G L = 0.5 mS. C1 adjusted for GS = 2 mS. VAGC 1 nF1 nF 50 Ω input 50 Ω input 1 nF 1 nF 20 µH 47 µF 1 nF 1 nF 1 nF 1 nF kΩ 1.8 kΩ 360 Ω 140 kΩ 1 nF VDD V DD 15 pF 10 pF 100 kΩ 330 kΩ V tun BB405 5.5 pF 330 kΩ BB405 input V tun output MGC481

1997 Sep 05 9

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FET BF998WR VDD = 12 V; GS = 3.3 mS; GL = 1 mS. L1 = L4 = 200 nH; 11 turns 0.5 mm copper wire, without spacing, internal diameter 3 mm. L2 = 2 cm, silvered 0.8 mm copper wire, 4 mm above ground plane. L3 = 2 cm, silvered 0.5 mm copper wire, 4 mm above ground plane. Fig.16 Gain control test circuit at f = 800 MHz. VAGC 1 nF 1 nF 1 nF 50 Ω input 50 Ω input 1 nF 270 kΩ 360 Ω 1.8 kΩ 140 kΩ 100 kΩ V DD V DD 1 nF MGC480 VDD 1 nF 1 nF 2-18 pF 0.5-3.5 pF 0.5-3.5 pF /,/, /,/, 4-40 pF /,/, Fig.17 Automatic gain control characteristics measured in circuit of Fig.15. VDD = 12 V; f = 200 MHz; Tamb =2 5°C. 01 0 −50 −40 MGC479 −30 −20 −10 24 6 8 IDSS = max typ min ΔG tr (dB) VAGC (V) VDD = 12 V; f = 800 MHz; Tamb =2 5°C. Fig.18 Automatic gain control characteristics measured in circuit of Fig.16. 01 0 −50 −40 MGC478 −30 −20 −10 24 6 8 IDSS = max typ min ΔG tr (dB) VAGC (V)

1997 Sep 05 10

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FET BF998WR PACKAGE OUTLINE Fig.19 SOT343R. Dimensions in mm. handbook, full pagewidth 0.3 0.1 0.25 0.10 0.2 0.1 max 1.00 max MSB367 1.4 1.2 2.2 1.8 B A 1.35 1.15 0.4 0.2 BM0.2AM0.2 2.2 2.0 0.7 0.5

1997 Sep 05 11

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FET BF998WR DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

Internet: http://www.semiconductors.philips.com Philips Semiconductors – a worldwide company © Philips Electronics N.V. 1997 SCA55 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,

Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Printed in The Netherlands 117067/00/02/pp12 Date of release: 1997 Sep 05 Document order number: 9397 750 02671

Product Information

BF998WR specifications and overview.

Summary

N-channel dual-gate MOS-FET

Description

N-channel dual-gate MOS-FET

Source title BF998WR Datasheet(PDF) - Quanzhou Jinmei Electronic Co.,Ltd.

Related Parts

More parts from the same family.

Browse manufacturer