BF996S

BF996S_2015 JMNIC | Alldatasheet

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Technical content

Product specification File under Discrete Semiconductors, SC07 April 1991 DISCRETE SEMICONDUCTORS BF996S N-channel dual-gate MOS-FET

Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S

FEATURES

• Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.

APPLICATIONS

• RF applications such as: – UHF television tuners – Professional communication equipment. PINNING PIN SYMBOL DESCRIPTION 1 s, b source 2 d drain 2 gate 2 4g 1 gate 1 Fig.1 Simplified outline (SOT143) and symbol. Marking code: MHp. handbook, halfpage s,b d Top view MAM039

DESCRIPTION

Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V DS drain-source voltage − 20 V ID drain current − 30 mA Ptot total power dissipation up to Tamb =6 0°C − 200 mW Tj junction temperature − 150 °C transfer admittance f = 1 kHz; ID = 10 mA; VDS =1 5V ; VG2 −S =4V 1 8 − mS C ig-1s input capacitance at gate 1 f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2 −S = 4 V 2.3 2.6 pF C rs feedback capacitance f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2 −S =4V 2 5 − fF F noise figure f = 200 MHz G S = 2 mS; BS =B Sopt; ID = 10 mA; VDS =1 5V ; VGS −2 =4V 1 − dB Y fs

Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 20 V ID drain current (DC) − 30 mA ID(AV) average drain current − 30 mA IG1-S gate 1 source −± 10 mA IG1-S gate 2 source −± 10 mA Ptot total power dissipation up to T amb =6 0°C; note 1 − 200 mW Tstg storage temperature range −65 +150 °C Tj junction temperature − 150 °C Fig.2 Power derating curve. handbook, halfpage 0 200 100 200 MGE792

100 Tamb (°C)

(mW) THERMAL CHARACTERISTICS Note to the Limiting values and the Thermal characteristics 1. Device mounted on a ceramic substrate of 8× 10 × 0.7 mm. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient in free air; note 1 460 K/W

Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S STATIC CHARACTERISTICS Tj=2 5°C unless otherwise specified. DYNAMIC CHARACTERISTICS Measuring conditions (common source): ID = 10 mA; VDS =1 5V ; VG2-S =4V ; Tamb =2 5°C. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IG1 −SS gate cut-off current V G1-S = ±5 V; VG2-S =V DS =0 −± 50 nA IG2 −SS gate cut-off current V G2-S = ±5 V; VG1-S =V DS =0 −± 50 nA V(BR)G1-SS gate-source breakdown voltage IG1-S = ±10 mA; VG2-S =V DS =0 ±6 ±20 V V(BR)G2-SS gate-source breakdown voltage IG2-S = ±10 mA; VG1-S =V DS =0 ±6 ±20 V IDSS drain current V DS =1 5V ; VG1-S = 0; VG2-S =4V 4 2 0 m A V(P)G1-S gate-source cut-off current ID =2 0µA; VDS = 15 V; VG2-S =4V −− 2.5 V V(P)G2-S gate-source cut-off current ID =2 0µA; VDS = 15 V; VG1-S =0 −− 2V SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT transfer admittance f = 1 kHz 15 18 − mS C ig1-s input capacitance at gate 1 f = 1 MHz − 2.3 2.6 pF C ig2-s input capacitance at gate 2 f = 1 MHz − 1.2 − pF C rs feedback capacitance f = 1 MHz − 25 − fF C os output capacitance f = 1 MHz − 0.8 − pF F noise figure f = 200 MHz; G S = 2 mS; BS =B Sopt − 1 − dB f = 800 MHz; GS = 3.3 mS; BS =B Sopt − 1.8 − dB G P power gain f = 200 MHz; G S = 2 mS; BS =B Sopt; G L = 0.5 mS; BL =B Lopt − 25 − dB f = 800 MHz; GS = 3.3 mS; BS =B Sopt; GL = 1 mS; BL =B Lopt − 18 − dB Y fs

Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification. Fig.3 SOT143. Dimensions in mm. See alsoSoldering recommendations. handbook, full pagewidth MBC845 max o max o max o 1.1 max 0.75 0.60 0.150 0.090 0.1 max M0.1 AB0 0.10.48 TOP VIEW 1.4 1.2 2.5 max 3.0 2.8 M0.2 ABA B 1.9 0.10.88 1.7