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BF909WR_15 JMNIC | Alldatasheet

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Technical content

Product speciﬁcation Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07

1997 Sep 05

N-channel dual-gate MOS-FET

1997 Sep 05 2

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FET BF909WR

FEATURES

Specially designed for use at 5 V supply voltage
Short channel transistor with high forward transfer admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz
Superior cross-modulation performance during AGC.

APPLICATIONS

VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.

DESCRIPTION

Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PINNING PIN SYMBOL DESCRIPTION 1 s, b source 2 d drain 2 gate 2 4g 1 gate 1 Fig.1 Simplified outline (SOT343R) and symbol. Marking code: ME. handbook, halfpage MAM192 s,b d Top view QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage −− 7V ID drain current −− 40 mA Ptot total power dissipation −− 280 mW Tj operating junction temperature −− 150 °C yfs forward transfer admittance 36 43 50 mS C ig1-s input capacitance at gate 1 − 3.6 4.3 pF C rs reverse transfer capacitance f = 1 MHz − 30 50 fF F noise ﬁgure f = 800 MHz − 2 2.8 dB

1997 Sep 05 3

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FET BF909WR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on a printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 7V ID drain current − 40 mA IG1 gate 1 current −± 10 mA IG2 gate 2 current −± 10 mA Ptot total power dissipation up to T amb =5 0°C; see Fig.2; note 1 − 280 mW Tstg storage temperature range −65 +150 °C Tj operating junction temperature − +150 °C Fig.2 Power derating curve. handbook, halfpage 0 50 100 200 300 MLD150 150 200 100 Ptot (mW) T ( C)amb o

1997 Sep 05 4

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FET BF909WR THERMAL CHARACTERISTICS Notes 1. Device mounted on a printed-circuit board. 2. T s is the temperature at the soldering point of the source lead. STATIC CHARACTERISTICS Tj=2 5°C; unless otherwise speciﬁed. Note 1. R G1 connects gate 1 to VGG =5V . DYNAMIC CHARACTERISTICS Common source; Tamb =2 5°C; VDS =5V ;V G2-S = 4 V; ID = 15 mA; unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient note 1 350 K/W R th j-s thermal resistance from junction to soldering point Ts =9 1°C; note 2 210 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)G1-SS gate 1-source breakdown voltage VG2-S =V DS = 0; IG1-S = 10 mA 6 15 V V(BR)G2-SS gate 2-source breakdown voltage VG1-S =V DS = 0; IG2-S = 10 mA 6 15 V V(F)S-G1 forward source-gate 1 voltage V G2-S =V DS = 0; IS-G1 = 10 mA 0.5 1.5 V V(F)S-G2 forward source-gate 2 voltage V G1-S =V DS = 0; IS-G2 = 10 mA 0.5 1.5 V VG1-S(th) gate 1-source threshold voltage VG2-S =4V ; VDS =5V ; ID =2 0µA 0.3 1 V VG2-S(th) gate 2-source threshold voltage VG1-S =V DS =5V ; ID =2 0µA 0.3 1.2 V IDSX drain-source current V G2-S =4V ; VDS =5V ; RG1 = 120 kΩ ; note 1 12 20 mA IG1-SS gate 1 cut-off current V G2-S =V DS = 0; VG1-S =5V − 50 nA IG2-SS gate 2 cut-off current V G1-S =V DS = 0; VG2-S =5V − 50 nA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT yfs forward transfer admittance pulsed; Tj=2 5°C 3 64 35 0m S C ig1-s input capacitance at gate 1 f = 1 MHz − 3.6 4.3 pF C ig2-s input capacitance at gate 2 f = 1 MHz − 2.3 3 pF C os drain-source capacitance f = 1 MHz − 2.3 3 pF C rs reverse transfer capacitance f = 1 MHz − 30 50 fF F noise ﬁgure f = 800 MHz; G S =G Sopt; BS =B Sopt − 2 2.8 dB

1997 Sep 05 5

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FET BF909WR Fig.3 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; see Fig.17. VDS = 5 V; VGG = 5 V; fw = 50 MHz. funw = 60 MHz; Tamb =2 5°C; RG1 = 120 kΩ . handbook, halfpage 110 100 10 50 MLB936 20 30 40 Vunw (dBµV) gain reduction (dB) Fig.4 Transfer characteristics; typical values. VDS =5V . Tj=2 5°C. handbook, halfpage 0.4 2.0 MLB937 0.8 1.2 1.6 ID (mA) V (V)G1 S V = 4 V3 V 2.5 V 2 V 1.5 V 1 V G2 S Fig.5 Output characteristics; typical values. VDS =5V . VG2-S =4V . Tj=2 5°C. handbook, halfpage 21 0 MLB938 468 ID (mA) V (V)DS 1.3 V 1.2 V 1.1 V 1.0 V 0.9 V V = 1.4 VG1 S Fig.6 Gate 1 current as a function of gate 1 voltage; typical values. VDS =5V . Tj=2 5°C. handbook, halfpage 0123 200 150 100 MLB939 IG1 (µA) V (V)G1 S 3 V 2.5 V 2 V 3.5 V V = 4 VG2 S

1997 Sep 05 6

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FET BF909WR Fig.7 Forward transfer admittance as a function of drain current; typical values. VDS =5V . Tj=2 5°C. handbook, halfpage 10 20 30 MLB940 yfs (mS) I (mA)D 3.5 V 3 V 2.5 V 2 V V = 4 VG2 S Fig.8 Drain current as a function of gate 1 current; typical values. VDS =5V . VG2-S =4V . Tj=2 5°C. handbook, halfpage 02 0 4 0 6 0 MLB941 I (µA)G1 ID (mA) Fig.9 Drain current as a function of gate 1 supply voltage (= VGG ); typical values; see Fig.17. VDS = 5 V; VG2-S =4V . R G1 = 120 kΩ (connected to VGG ); Tj=2 5°C. handbook, halfpage 0246 MLB942 V (V)GG ID (mA) Fig.10 Drain current as a function of gate 1 (= VGG ) and drain supply voltage; typical values; see Fig.17. VG2-S =4V . R G1 connected to VGG ; Tj=2 5°C. handbook, halfpage 24 8 MLB943 V = V (V)GG DS ID (mA) R = 47 kΩG1 68 kΩ 82 kΩ 100 kΩ 120 kΩ 150 kΩ 180 kΩ 220 kΩ

1997 Sep 05 7

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FET BF909WR VDS = 5 V; Tj=2 5°C. R G1 = 120 kΩ (connected to VGG ). Fig.11 Drain current as a function of gate 2 voltage; typical values; see Fig.17. handbook, halfpage 0246 MLB944 ID (mA) 4.5 V 4 V 3.5 V 3 V V = 5 VGG V (V)G2 S Fig.12 Gate 1 current as a function of gate 2 voltage; typical values; see Fig.17. VDS = 5 V; Tj=2 5°C. R G1 = 120 kΩ (connected to VGG ). handbook, halfpage 0246 MLB945 IG1 (µA) V (V)G2 S 4.5 V 4 V 3.5 V 3 V V = 5 VGG Fig.13 Input admittance as a function of frequency; typical values. VDS = 5 V; VG2 =4V . ID = 15 mA; Tamb =2 5°C. handbook, halfpage 103 MLB946 10210 10 1 10 2 yis (mS) f (MHz) bis gis Fig.14 Reverse transfer admittance and phase as a function of frequency; typical values. VDS = 5 V; VG2 =4V . ID = 15 mA; Tamb =2 5°C. 103 MLB947 10210 10 3 10 2 yrs 10 3 rs (µS) f (MHz) rs yrs (deg) ϕ ϕ

1997 Sep 05 8

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FET BF909WR Fig.15 Forward transfer admittance and phase as a function of frequency; typical values. VDS = 5 V; VG2 =4V . ID = 15 mA; Tamb =2 5°C. 103 MLB948 10210 10 2 yfs (mS) yfs f (MHz) fs fs (deg) ϕ ϕ Fig.16 Output admittance as a function of frequency; typical values. VDS = 5 V; VG2 =4V . ID = 15 mA; Tamb =2 5°C. handbook, halfpage 103 MLB949 10210 10 1 10 2 yos (mS) f (MHz) bos gos Fig.17 Cross-modulation test set-up. DUT VAGC 4.7 nF 10 kΩ MLD151 4.7 nF VDS 350 nH C3 12 pF 2.2 pF R L 50 Ω 50 Ω50 Ω 10 Ω VGG R GEN V I R2 4.7 nF R G1

1997 Sep 05 9

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FET BF909WR Table 1 Scattering parameters: VDS = 5 V; VG2-S = 4 V; ID = 15 mA; Tamb =2 5°C Table 2 Noise data: VDS = 5 V; VG2-S = 4 V; ID = 15 mA; Tamb =2 5°C f (MHz) s11 s21 s12 s22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) f (MHz) Fmin (dB) Γopt rn (ratio) (deg) 800 2.00 0.603 67.71 0.581

1997 Sep 05 10

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FET BF909WR PACKAGE OUTLINE Fig.18 SOT343R. Dimensions in mm. handbook, full pagewidth 0.3 0.1 0.25 0.10 0.2 0.1 max 1.00 max MSB367 1.4 1.2 2.2 1.8 B A 1.35 1.15 0.4 0.2 BM0.2AM0.2 2.2 2.0 0.7 0.5

1997 Sep 05 11

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FET BF909WR DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

Internet: http://www.semiconductors.philips.com Philips Semiconductors – a worldwide company © Philips Electronics N.V. 1997 SCA55 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

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Product Information

BF909WR specifications and overview.

Summary

N-channel dual-gate MOS-FET

Description

N-channel dual-gate MOS-FET

Source title BF909WR_15 Datasheet(PDF) - Quanzhou Jinmei Electronic Co.,Ltd.

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