BF908WR_15 JMNIC | Alldatasheet

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Technical content

Preliminary specification File under Discrete Semiconductors, SC07

1995 Apr 25

N-channel dual-gate MOS-FET

1995 Apr 25 2

Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR

FEATURES

  • High forward transfer admittance
  • Short channel transistor with high forward transfer admittance to input capacitance ratio
  • Low noise gain controlled amplifier up to 1 GHz.

APPLICATIONS

  • VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment.

DESCRIPTION

Depletion type field effect transistor in a plastic microminiature SOT343R package. The transistor is protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PINNING PIN SYMBOL DESCRIPTION 1 s, b source 2 d drain 2 gate 2 4g 1 gate 1 Fig.1 Simplified outline (SOT343R) and symbol. Marking code: MD. MAM198Top view s,b d QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage −− 12 V ID drain current −− 40 mA Ptot total power dissipation −− 300 mW Tj operating junction temperature −− 150 °C yfs forward transfer admittance 36 43 50 mS C ig1-s input capacitance at gate 1 2.4 3.1 4 pF C rs reverse transfer capacitance f = 1 MHz 20 30 45 fF F noise figure f = 800 MHz − 1.5 2.5 dB

1995 Apr 25 3

Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on a printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 12 V ID drain current − 40 mA IG1 gate 1 current −± 10 mA IG2 gate 2 current −± 10 mA Ptot total power dissipation up to T amb =4 5°C; see Fig.2; note 1 − 300 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − +150 °C Fig.2 Power derating curve. handbook, halfpage 0 50 100 200 MLD154 150 400 200 300 100 Ptot (mW) T ( C)amb o

1995 Apr 25 4

Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR THERMAL CHARACTERISTICS Notes 1. Device mounted on a printed-circuit board. 2. T s is the temperature at the soldering point of the source lead. STATIC CHARACTERISTICS Tj=2 5°C; unless otherwise specified. DYNAMIC CHARACTERISTICS Common source; Tamb =2 5°C; VDS =8V ;V G2-S = 4 V; ID = 15 mA; unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient note 1 350 K/W R th j-s thermal resistance from junction to soldering point Ts =8 7°C; note 2 210 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)G1-SS gate 1-source breakdown voltage VG2-S =V DS = 0; IG1-S =1 0m A 8 − 20 V V(BR)G2-SS gate 2-source breakdown voltage VG1-S =V DS = 0; IG2-S =1 0m A 8 − 20 V V(P)G1-S gate 1-source cut-off voltage VG2-S =4V ; VDS =8V ; ID =2 0µA −− − 2V V(P)G2-S gate 2-source cut-off voltage VG1-S =4V ; VDS =8V ; ID =2 0µA −− − 1.5 V IDSS drain-source current V G2-S =4V ; VDS =8V ; VG1-S =0 3 1 5 2 7 m A IG1-SS gate 1 cut-off current V G2-S =V DS = 0; VG1-S =5V −− 50 nA IG2-SS gate 2 cut-off current V G1-S =V DS = 0; VG2-S =5V −− 50 nA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT yfs forward transfer admittance pulsed; Tj=2 5°C 3 64 35 0m S C ig1-s input capacitance at gate 1 f = 1 MHz 2.4 3.1 4 pF C ig2-s input capacitance at gate 2 f = 1 MHz 1.2 1.8 2.5 pF C os drain-source capacitance f = 1 MHz 1.2 1.7 2.2 pF C rs reverse transfer capacitance f = 1 MHz 20 30 45 fF F noise figure f = 200 MHz; G S = 2 mS; BS =B Sopt − 0.6 1.2 dB f = 800 MHz; GS =G Sopt; BS =B Sopt − 1.5 2.5 dB

1995 Apr 25 5

Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR Fig.3 Transfer characteristics; typical values. VDS =8V . Tj=2 5°C. handbook, halfpage 3 V 2 V 1.5 V 1 V 0.5 V 0 V (mA) ID = 4 VVG2-S VG1-S (V) MRC281 Fig.4 Output characteristics; typical values. VG2-S =4V . Tj=2 5°C. handbook, halfpage 048 1 2 0.2 V 0.1 V 0 V –0.2 V –0.3 V –0.1 V V (V)DS ID (mA) V = G1-S 0.3 V MRC282 Fig.5 Forward transfer admittance as a function of drain current; typical values. VDS =8V . Tj=2 5°C. 0 5 10 15 20 25 0.5 V 1 V 1.5 V 2 V 3 V 4 V VG2-S = 0 V Yfs (mS) ID (mA) MRC280 Fig.6 Forward transfer admittance as a function of junction temperature; typical values. 0 40 80 120 16040 Yfs (mS) T j( C)o MRC276

1995 Apr 25 6

Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR PACKAGE OUTLINE Fig.7 SOT343R. Dimensions in mm. 0.3 0.1 0.25 0.10 0.2 0.1 max 1.00 max MSB367 1.4 1.2 2.2 1.8 B A 1.35 1.15 0.4 0.2 BM0.2AM0.2 2.2 2.0 0.7 0.5

1995 Apr 25 7

Philips Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.