BF861

BF861_15 JMNIC | Alldatasheet

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Technical content

Product specification Supersedes data of 1995 Apr 14 File under Discrete Semiconductors, SC07

1997 Sep 04

BF861A; BF861B; BF861C N-channel junction FETs

1997 Sep 04 2

Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C

FEATURES

• High transfer admittance
• Low input capacitance
• Low feedback capacitance
• Low noise.

APPLICATIONS

• Preamplifiers for AM tuners in car radios.

DESCRIPTION

N-channel symmetrical junction field effect transistors in a SOT23 package. PINNING - SOT23 PIN SYMBOL DESCRIPTION 1 s source 2 d drain 3 g gate CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline and symbol. Marking codes: BF861A: M33. BF861B: M34. BF861C: M35. handbook, halfpage s dg MAM036Top view QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) − 25 V IDSS drain current V GS = 0; VDS =8V BF861A 2 6.5 mA BF861B 6 15 mA BF861C 12 25 mA P tot total power dissipation up to T amb =2 5°C − 250 mW yfs forward transfer admittance V GS = 0; VDS =8V BF861A 12 20 mS BF861B 16 25 mS BF861C 20 30 mS C iss input capacitance f = 1 MHz − 10 pF C rss reverse transfer capacitance f = 1 MHz − 2.7 pF

1997 Sep 04 3

Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) − 25 V VGSO gate-source voltage open drain − 25 V VDGO drain-gate voltage (DC) open source − 25 V IG forward gate current (DC) − 10 mA Ptot total power dissipation up to T amb =2 5°C; note 1− 250 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Fig.2 Power derating curve. MRC166 100 200 300 0 50 100 150 Ptot (mW) Tamb ( C)o

1997 Sep 04 4

Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C THERMAL CHARACTERISTICS Note 1. Device mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj=2 5°C; VDS = 8 V; VGS = 0; unless otherwise specified. SYMBOL PARAMETER VALUE UNIT R th j-a thermal resistance from junction to ambient; note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)GSS gate-source breakdown voltage IG = −1 µA −25 −− V VGSoff gate-source cut-off voltage ID =1 µA BF861A −0.2 −− 1V BF861B −0.5 −− 1.5 V BF861C −0.8 −− 2V VGSS gate-source forward voltage VDS = 0; IG =1m A −− 1V IDSS drain current BF861A 2 − 6.5 mA BF861B 6 − 15 mA BF861C 12 − 25 mA IGSS gate cut-off current V GS = −20 V; VDS =0 −−− 1n A yfs forward transfer admittance BF861A 12 − 20 mS BF861B 16 − 25 mS BF861C 20 − 30 mS gos common source output conductance BF861A −− 200 µS BF861B −− 250 µS BF861C −− 300 µS C iss input capacitance f = 1 MHz −− 10 pF C rss reverse transfer capacitance f = 1 MHz − 2.1 2.7 pF Vn/√B equivalent input noise voltage V GS = 0; f = 1 MHz − 1.5 − nV/√Hz

1997 Sep 04 5

Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C Fig.3 Drain current as a function of gate-source cut-off voltage; typical values. VDS =8V . 0.5 1 2 MBD461 1.5 IDSS (mA) V (V)GSoff Fig.4 Common-source output conductance as a function of drain current; typical values. VDS =8V . VGS =0 . handbook, halfpage 300 200 100 52 5 MBD462 10 15 20 IDSS (mA) gos (µS) Fig.5 Forward transfer admittance as a function of drain current; typical values. VDS =8V . VGS =0 . handbook, halfpage 52 5 MBD463 10 15 20 IDSS (mA) yfs (mS) Fig.6 Forward transfer admittance as a function of drain current; typical values. VDS =8V . handbook, halfpage 0 5 10 20 MBD464 DI (mA) BF861C BF861B BF861A yfs (mS)

1997 Sep 04 6

Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C Fig.7 Typical input characteristics. BF861A VDS =8V . handbook, halfpage MBD465 0.8 0.6 0.4 0.2 V (V)GS ID (mA) Fig.8 Typical output characteristics. BF861A VDS =8V . handbook, halfpage 01 0 MBD466 2468 V (V)DS ID (mA) V GS = 0 V 100 mV 200 mV 300 mV Fig.9 Typical input characteristics. BF861B VDS =8V . handbook, halfpage MBD467 0.8 0.6 0.4 0.2 V (V)GS ID (mA) Fig.10 Typical output characteristics. BF861B VDS =8V . handbook, halfpage 01 0 MBD468 2468 V (V)DS ID (mA) V GS = 0 V 100 mV 200 mV 300 mV 400 mV 500 mV

1997 Sep 04 7

Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C Fig.11 Typical input characteristics. BF861C VDS =8V . handbook, halfpage 2.5 0 MBD469 2 1.5 1 0.5 V (V)GS ID (mA) Fig.12 Typical output characteristics. BF861C VDS =8V . handbook, halfpage 01 0 MBD470 2468 V (V)DS ID (mA) V GS = 0 V 400 mV 600 mV 800 mV 200 mV 1 V Fig.13 Input and reverse transfer capacitance as functions of gate-source voltage; typical values. VDS =8V . f = 1 MHz. handbook, halfpage 864 0 MBD471 V (V)GS (pF) rs rsC isC isC ,C Fig.14 Gate current as a function of drain-gate voltage; typical values. VDS =8V . handbook, halfpage102 10 3 10 4 10 5 250 MBD472 5 1 01 52 0 10 2 10 1 V (V)DG IG (nA) 1 mA 0.1 mA ID = 10 mA IGSS

1997 Sep 04 8

Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C Fig.15 Equivalent input noise as a function of frequency; typical values. VDS =8V . VGS =0 . handbook, halfpage 103 MBD473 10210110 10 12 f (kHz) V / Bn (nV/ Hz) Fig.16 Common-source input admittance; typical values. VDS =8V . VGS =0 . Tamb =2 5°C. 10 3 MBD474 10 210 10 1 10 2 f (MHz) g ,bis is (mS) g is b is Fig.17 Common-source reverse admittance; typical values. VDS =8V . VGS =0 . Tamb =2 5°C. handbook, halfpage MBD475 10 310 210 10 2 10 2 f (MHz) g ,brs rs (mS) 10 1 grs brs Fig.18 Common-source forward transfer admittance; typical values. VDS =8V . VGS =0 . Tamb =2 5°C. handbook, halfpage 103 MBD476 10210 10 2 f (MHz) g ,bfs fs (mS) g fs b fs

1997 Sep 04 9

Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C Fig.19 Common-source output admittance; typical values. VDS =8V . VGS =0 . Tamb =2 5°C. 10 3 MBD477 10 210 10 1 10 2 f (MHz) g ,bos os (mS) bos gos

1997 Sep 04 10

Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C PACKAGE OUTLINE Fig.20 SOT23. handbook, full pagewidth MBC846 max o max o max o 1.1 max 0.55 0.45 0.150 0.0900.1 max M0.1 AB0.48 0.38 TOP VIEW 1.4 1.2 2.5 max 3.0 2.8 M0.2 AA B 0.95 1.9 Dimensions in mm.

1997 Sep 04 11

Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

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