BF510

BF510_15 JMNIC | Alldatasheet

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Technical content

Product specification File under Discrete Semiconductors, SC07 December 1997 DISCRETE SEMICONDUCTORS BF510 to 513 N-channel silicon field-effect transistors

Philips Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513

DESCRIPTION

Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r.f. stages in f.m. portables (BF510), car radios (BF511) and mains radios (BF512) or the mixer stage (BF513). PINNING - SOT23 1 = gate 2 = drain 3 = source MARKING CODE BF510 = S6p BF511 = S7p BF512 = S8p BF513 = S9p Fig.1 Simplified outline and symbol. handbook, halfpage g d s Top view MAM385 QUICK REFERENCE DATA Drain-source voltage V DS max. 20 V Drain current (DC or average) I D max. 30 mA Total power dissipation up to Tamb =4 0°CP tot max. 250 mW BF510 511 512 513 Drain current > 0.7 2.5 6 10 mA VDS = 10 V; VGS = 0 I DSS < 3.0 7.0 12 18 mA Transfer admittance (common source) VDS = 10 V; VGS = 0; f = 1 kHz  yfs > 2.5 4 6 7 mS Feedback capacitance VDS = 10 V; VGS =0 C rs typ. 0.3 0.3 −− pF VDS = 10 V; ID = 5 mA C rs typ. −− 0.3 0.3 pF Noise figure at optimum source admittance G S = 1 mS;−BS = 3 mS; f = 100 MHz VDS = 10 V; VGS = 0 F typ. 1.5 1.5 −− dB VDS = 10 V; ID = 5 mA F typ. −− 1.5 1.5 dB

Philips Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL RESISTANCE Note 1. Mounted on a ceramic substrate of 8 mm× 10 mm × 0.7 mm. STATIC CHARACTERISTICS Tamb =2 5°C Drain-source voltage V DS max. 20 V Drain-gate voltage (open source) V DGO max. 20 V Drain current (DC or average) I D max. 30 mA Gate current ± IG max. 10 mA Total power dissipation up to Tamb =4 0°C (note 1) P tot max. 250 mW Storage temperature range T stg −65 to+ 150 °C Junction temperature T j max. 150 °C From junction to ambient (note 1) R th j-a = 430 K/W BF510 511 512 513 Gate cut-off current −VGS = 0.2 V; VDS =0 −IGSS < 10 10 10 10 nA Gate-drain breakdown voltage IS =0 ;−ID =1 0µA −V(BR)GDO > 20 20 20 20 V Drain current 0.7 3.0 2.5 7.0 mA mAVDS = 10 V; VGS =0 I DSS Gate-source cut-off voltage ID =1 0µA; VDS = 10 V −V(P)GS typ. 0.8 1.5 2.2 3 V

Philips Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 DYNAMIC CHARACTERISTICS Measuring conditions (common source): VDS = 10 V; VGS = 0; Tamb =2 5°C for BF510 and BF511 VDS = 10 V; ID = 5 mA; Tamb =2 5°C for BF512 and BF513 y-parameters (common source) BF510 511 512 513 Input capacitance at f = 1 MHz C is < 5555 p F Input conductance at f = 100 MHz g is typ. 100 90 60 50 µS Feedback capacitance at f = 1 MHz C rs < 0.5 0.5 0.5 0.5 pF Transfer admittance at f = 1 kHz  yfs > 2.5 4.0 4.0 3.5 mS VGS = 0 instead of ID = 5 mA  yfs > − − 6.0 7.0 mS Output capacitance at f = 1 MHz C os < 3333 p F Output conductance at f = 1 MHz g os < 60 80 100 120 µS Output conductance at f = 100 MHz g os typ. 35 55 70 90 µS Noise figure at optimum source admittance G S = 1 mS;−BS = 3 mS; Fig.2 V GS = 0 for BF510 and BF511; ID = 5 mA for BF512 and BF513; f = 1 MHz; Tamb = 25°C. handbook, halfpage typ 1.5 0.5 C rs (pF) VDS (V) 4 8 12 16 MDA275 Fig.3 V DS = 10 V; f = 1 kHz; Tamb =2 5°C; typical values. handbook, halfpage |yfs| (mS) ID (mA) 10 15 MDA276 BF511 BF510 BF512 BF513

Philips Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 Fig.4 Power derating curve. handbook, halfpage Tamb (°C) Ptot (mW) 300 200 100 40 200 80 120 160 MDA245

Philips Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 PACKAGE OUTLINE UNIT A 1 max. bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT23

Philips Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.