BF423

BF423 SYC | Alldatasheet

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1Motorola Small–Signal Transistors, FETs and Diodes Device Data /C0072/C0105/C0103/C0104 /C0086/C0111/C0108/C0116/C0097/C0103/C0101 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114/C0115 PNP Silicon MAXIMUM RATINGS Rating Symbol BF421 BF423 Unit Collector–Emitter Voltage VCEO –300 –250 Vdc Collector–Base Voltage VCBO –300 –250 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –500 mAdc Total Device Dissipation @ T A = 25°C Derate above 25°C PD 625 5.0 mW mW/ °C Total Device Dissipation @ T C = 25°C Derate above 25°C PD 1.5 Watts mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R /C0113JA 200 °C/W Thermal Resistance, Junction to Case R /C0113JC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (1) (IC = –1.0 mAdc, IB = 0) BF421 BF423 V(BR)CEO –300 –250 Vdc Collector–Base Breakdown Voltage (IC = –100 /C0109Adc, IE = 0) BF421 BF423 V(BR)CBO –300 –250 Vdc Emitter–Base Breakdown Voltage (IE = –100 /C0109Adc, IC = 0) BF421 BF423 V(BR)EBO –5.0 –5.0 Vdc Collector Cutoff Current (VCB = –200 Vdc, IE = 0) BF421 BF423 ICBO –0.01 /C0109Adc Emitter Cutoff Current (VEB = –5.0 Vdc, IC = 0) BF421 BF423 IEBO –100 nAdc 1. Pulse Test: Pulse Width /C0118 300 /C0109s; Duty Cycle /C0118 2.0%. /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 /C0066/C0070/C0052/C0050/C0049 /C0066/C0070/C0052/C0050/C0051 CASE 29–11, STYLE 14 TO–92 (TO–226AA) 2 3  Motorola, Inc. 1998 COLLECTOR BASE EMITTER REV 1 BF423 PNP 250V 500MA TO-92 www.sycelectronica.com.ar

/C0066/C0070/C0052/C0050/C0049 /C0066/C0070/C0052/C0050/C0051

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = –25 mA, VCE = –20 Vdc) BF421 BF423 hFE Collector–Emitter Saturation Voltage (IC = –20 mAdc, IB = –2.0 mAdc) VCE(sat) — –0.5 Vdc Base–Emitter Saturation Voltage (IC = –20 mA, IB = –2.0 mA) VBE(sat) — –2.0 Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = –10 mAdc, VCE = –10 Vdc, f = 20 MHz) fT 60 — MHz Common Emitter Feedback Capacitance (VCB = –30 Vdc, IE = 0, f = 1.0 MHz) C re — 2.8 pF www.sycelectronica.com.ar

/C0066/C0070/C0052/C0050/C0049 /C0066/C0070/C0052/C0050/C0051 Motorola Small–Signal Transistors, FETs and Diodes Device Data PACKAGE DIMENSIONS CASE 029–11 (TO–226AA) ISSUE AJ STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. R A P J L B K G H SECTION X–X CV D N N XX SEATING PLANE DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 N 0.080 0.105 2.04 2.66 BF421/D◊ www.sycelectronica.com.ar