BF422

BF422 SYC | Alldatasheet

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1Motorola Small–Signal Transistors, FETs and Diodes Device Data /C0072/C0105/C0103/C0104 /C0086/C0111/C0108/C0116/C0097/C0103/C0101 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114/C0115 NPN Silicon MAXIMUM RATINGS Rating Symbol BF420 BF422 Unit Collector–Emitter Voltage VCEO 300 250 Vdc Collector–Base Voltage VCBO 300 250 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/ °C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 Watts mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to AmbientR /C0113JA 200 °C/W Thermal Resistance, Junction to Case R /C0113JC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) BF420 BF422 V(BR)CEO 300 250 Vdc Collector–Base Breakdown Voltage (IC = 100 /C0109Adc, IE = 0) BF420 BF422 V(BR)CBO 300 250 Vdc Emitter–Base Breakdown Voltage (IE = 100 /C0109Adc, IC = 0) BF420 BF422 V(BR)EBO 5.0 5.0 Vdc Collector Cutoff Current (VCB = 200 Vdc, IE = 0) BF420 BF422 ICBO 0.01 µAdc Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) BF420 BF422 IEBO 100 nAdc 1. Pulse Test: Pulse Width /C0118 300 /C0109s; Duty Cycle /C0118 2.0%. /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 /C0066/C0070/C0052/C0050/C0048 /C0066/C0070/C0052/C0050/C0050 CASE 29–04, STYLE 14 TO–92 (TO–226AA) 2 3  Motorola, Inc. 1996 COLLECTOR BASE EMITTER BF422 NPN 250V 500MA TO-92 www.sycelectronica.com.ar

/C0066/C0070/C0052/C0050/C0048 /C0066/C0070/C0052/C0050/C0050

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 25 mAdc, VCE = 20 Vdc) BF420 BF422 hFE Collector–Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VCE(sat) — 0.5 Vdc Base–Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) VBE(sat) — 2.0 Vdc SMALL–SIGNAL CHARACTERISTICS CurrentGain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) fT 60 — MHz Common Emitter Feedback Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) C re — 1.6 pF www.sycelectronica.com.ar

/C0066/C0070/C0052/C0050/C0048 /C0066/C0070/C0052/C0050/C0050

4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. R A P J L F B K G H SECTION X–X CV D N N X X SEATING PLANE DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.022 0.41 0.55 F 0.016 0.019 0.41 0.48 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 N 0.080 0.105 2.04 2.66 CASE 029–04 (TO–226AA) ISSUE AD STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE BF420/D /C0042/C0066/C0070/C0052/C0050/C0048/C0047/C0068/C0042 www.sycelectronica.com.ar