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BF245A_15 JMNIC | Alldatasheet

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Technical content

Product speciﬁcation Supersedes data of April 1995 File under Discrete Semiconductors, SC07

1996 Jul 30

BF245A; BF245B; BF245C N-channel silicon field-effect transistors

1996 Jul 30 2

Philips Semiconductors Product speciﬁcation N-channel silicon ﬁeld-effect transistors BF245A; BF245B; BF245C

FEATURES

Interchangeability of drain and source connections
Frequencies up to 700 MHz.

APPLICATIONS

LF, HF and DC amplifiers.

DESCRIPTION

General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PINNING PIN SYMBOL DESCRIPTION 1 d drain 2 s source 3 g gateFig.1 Simplified outline (TO-92 variant) and symbol. handbook, halfpage MAM257 s d g QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage −−± 30 V VGSoff gate-source cut-off voltage ID = 10 nA; VDS =1 5V −0.25 −− 8V VGSO gate-source voltage open drain −−− 30 V IDSS drain current V DS = 15 V; VGS =0 BF245A 2 − 6.5 mA BF245B 6 − 15 mA BF245C 12 − 25 mA Ptot total power dissipation T amb =7 5°C −− 300 mW yfs forward transfer admittance VDS = 15 V; VGS =0 ; f = 1 kHz; Tamb =2 5°C 3 − 6.5 mS C rs reverse transfer capacitance VDS = 20 V; VGS = −1V ; f = 1 MHz; Tamb =2 5°C − 1.1 − pF

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Philips Semiconductors Product speciﬁcation N-channel silicon ﬁeld-effect transistors BF245A; BF245B; BF245C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum 10 mm × 10 mm. THERMAL CHARACTERISTICS STATIC CHARACTERISTICS Tj=2 5°C; unless otherwise specified. Note 1. Measured under pulse conditions: tp = 300µs;δ≤ 0.02. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage −± 30 V VGDO gate-drain voltage open source −− 30 V VGSO gate-source voltage open drain −− 30 V ID drain current − 25 mA IG gate current − 10 mA Ptot total power dissipation up to T amb =7 5°C; − 300 mW up to Tamb =9 0°C; note 1 − 300 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient in free air 250 K/W thermal resistance from junction to ambient 200 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)GSS gate-source breakdown voltage IG = −1 µA; VDS =0 −30 − V VGSoff gate-source cut-off voltage I D = 10 nA; VDS =1 5V −0.25 −8.0 V VGS gate-source voltage I D = 200µA; VDS =1 5V BF245A −0.4 −2.2 V BF245B −1.6 −3.8 V BF245C −3.2 −7.5 V IDSS drain current V DS =1 5V ; VGS = 0; note 1 BF245A 2 6.5 mA BF245B 6 15 mA BF245C 12 25 mA I GSS gate cut-off current V GS = −20 V; VDS =0 −− 5n A VGS = −20 V; VDS = 0; Tj= 125°C −− 0.5 µA

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Philips Semiconductors Product speciﬁcation N-channel silicon ﬁeld-effect transistors BF245A; BF245B; BF245C DYNAMIC CHARACTERISTICS Common source; Tamb =2 5°C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT C is input capacitance V DS = 20 V; VGS = −1 V; f = 1 MHz − 4 − pF C rs reverse transfer capacitance VDS = 20 V; VGS = −1 V; f = 1 MHz − 1.1 − pF C os output capacitance V DS = 20 V; VGS = −1 V; f = 1 MHz − 1.6 − pF gis input conductance V DS =1 5V ;VGS = 0; f = 200 MHz − 250 −µ S gos output conductance V DS =1 5V ;VGS = 0; f = 200 MHz − 40 −µ S yfs forward transfer admittance VDS =1 5V ;VGS = 0; f = 1 kHz 3 − 6.5 mS VDS =1 5V ;VGS = 0; f = 200 MHz − 6 − mS yrs reverse transfer admittance VDS =1 5V ;VGS = 0; f = 200 MHz − 1.4 − mS yos output admittance V DS =1 5V ;VGS =0 ;f=1k H z − 25 −µ S fgfs cut-off frequency V DS =1 5V ;VGS =0 ;gfs= 0.7 of its value at 1 kHz − 700 − MHz F noise ﬁgure V DS =1 5V ;VGS = 0; f = 100 MHz; R G =1k Ω (common source); input tuned to minimum noise − 1.5 − dB handbook, halfpage−10 −10−3 −10−2 −10−1 150500 MGE785 100 typ Tj (°C) IGSS (nA) Fig.2 Gate leakage current as a function of junction temperature; typical values. VDS = 0; VGS = −20 V. Fig.3 Transfer characteristics for BF245A; typical values. handbook, halfpage VGS (V) ID (mA) −40 −2 MGE789 VDS = 15 V; Tj=2 5°C.

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Philips Semiconductors Product speciﬁcation N-channel silicon ﬁeld-effect transistors BF245A; BF245B; BF245C handbook, halfpage VDS (V) ID (mA) 02 0 10 MBH555 VGS = 0 V −0.5 V −1 V −1.5 V Fig.4 Output characteristics for BF245A; typical values. VDS = 15 V; Tj=2 5°C. Fig.5 Transfer characteristics for BF245B; typical values. VDS = 15 V; Tj=2 5°C. handbook, halfpage VGS (V) ID (mA) −40 −2 MGE787 handbook, halfpage VDS (V) ID (mA) 02 0 10 MBH553 VGS = 0 V −0.5 V −1 V −1.5 V −2 V −2.5 V Fig.6 Output characteristics for BF245B; typical values. VDS = 15 V; Tj=2 5°C. Fig.7 Transfer characteristics for BF245C; typical values. handbook, halfpage VGS (V) ID (mA) −10 0 −5 MGE788 VDS = 15 V; Tj=2 5°C.

1996 Jul 30 6

Philips Semiconductors Product speciﬁcation N-channel silicon ﬁeld-effect transistors BF245A; BF245B; BF245C handbook, halfpage VDS (V) ID (mA) 02 0 10 MBH554 VGS = 0 V −1 V −2 V −3 V −4 V Fig.8 Output characteristics for BF245C; typical values. VDS = 15 V; Tj=2 5°C. Fig.9 Drain current as a function of junction temperature; typical values for BF245A. VDS =1 5V . handbook, halfpage 0 50 150 Tj (°C) ID (mA) MGE775 100 −0.5 V VGS = 0 V −1.5 V −1 V Fig.10 Drain current as a function of junction temperature; typical values for BF245B. handbook, halfpage 0 50 150 MGE776

100 Tj (°C)

(mA) VGS = 0 V −2 V −1 V VDS =1 5V . Fig.11 Drain current as a function of junction temperature; typical values for BF245C. VDS =1 5V . handbook, halfpage 0 50 150 MGE779 100 Tj (°C) ID (mA) VGS = 0 V −4 V −2 V

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Philips Semiconductors Product speciﬁcation N-channel silicon ﬁeld-effect transistors BF245A; BF245B; BF245C Fig.12 Input admittance; typical values. handbook, halfpage MGE778 103 102 102 10−1 10 10 2 103 gis (µA/V) bis (mA/V) f (MHz) bis gis VDS = 15 V; VGS = 0; Tamb =2 5°C. Fig.13 Common source reverse admittance as a function of frequency; typical values. handbook, halfpage MGE780 104 103 102 10−1 10−2 10 10 2 103 brs (µA/V) C rs (pF) f (MHz) brs C rs VDS = 15 V; VGS = 0; Tamb =2 5°C. Fig.14 Common-source forward transfer admittance as a function of frequency; typical values. VDS = 15 V; VGS = 0; Tamb =2 5°C. handbook, halfpage10 MGE782 10 10 2 103 gfs, −bfs (mA/V) f (MHz) −bfs gfs Fig.15 Common-source output admittance as a function of frequency; typical values. VDS = 15 V; VGS = 0; Tamb =2 5°C. handbook, halfpage MGE783 103 102 10−1 10−2 10 10 2 103 gos (µA/V) bos (mA/V) f (MHz) bos gos

1996 Jul 30 8

Philips Semiconductors Product speciﬁcation N-channel silicon ﬁeld-effect transistors BF245A; BF245B; BF245C Fig.16 Input capacitance as a function of gate-source voltage; typical values. VDS = 20 V; f = 1 MHz; Tamb =2 5°C. handbook, halfpage −2 −10 MGE777 −4 −6 −8 VGS (V) C is (pF) typ Fig.17 Reverse transfer capacitance as a function of gate-source voltage; typical values. VDS = 20 V; f = 1 MHz; Tamb =2 5°C. handbook, halfpage 0 −10 1.5 0.5 MGE781 C rs (pF) −2 −4 −6 −8 VGS (V) typ Fig.18 Forward transfer admittance as a function of drain current; typical values. handbook, halfpage MGE791 |yfs| (mA/V) ID (mA) 0 2010 155 BF245A BF245B BF245C VDS = 15 V; f = 1 kHz; Tamb =2 5°C. Fig.19 Gate-source cut-off voltage as a function of drain current; typical values. VDS = 15 V; Tj=2 5°C. handbook, halfpage 01 0 3 0 −10 MGE784 BF245A IDSS at VGS = 0 (mA) VGSoff at ID = 10 nA (V) BF245B BF245C

1996 Jul 30 9

Philips Semiconductors Product speciﬁcation N-channel silicon ﬁeld-effect transistors BF245A; BF245B; BF245C Fig.20 Drain-source on-state resistance as a function of gate-source voltage; typical values. VDS = 0; f = 1 kHz; Tamb =2 5°C. handbook, halfpage 103 10−1 102 −4−2−10 MGE790 R DSon (kΩ ) BF245A BF245B BF245C VGS (V) Fig.21 Noise figure as a function of frequency; typical values. VDS = 15 V; VGS = 0; RG =1k Ω ; Tamb =2 5°C. Input tuned to minimum noise. handbook, halfpage

3 MGE786

F (dB) f (MHz)

1996 Jul 30 10

Philips Semiconductors Product speciﬁcation N-channel silicon ﬁeld-effect transistors BF245A; BF245B; BF245C PACKAGE OUTLINE Fig.22 TO-92 variant. handbook, full pagewidth MBC015 - 1 2.544.8 max 4.2 max 0.66 0.56 5.2 max 12.7 min 2.5 max(1) 0.48 0.40 0.40 min 1.7 1.4 Dimensions in mm. (1) Terminal dimensions within this zone are uncontrolled.

1996 Jul 30 11

Philips Semiconductors Product speciﬁcation N-channel silicon ﬁeld-effect transistors BF245A; BF245B; BF245C DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

Product Information

BF245A specifications and overview.

Summary

N-channel silicon field-effect transistors

Description

N-channel silicon field-effect transistors

Source title BF245A_15 Datasheet(PDF) - Quanzhou Jinmei Electronic Co.,Ltd.

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