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BF1207

Quanzhou Jinmei Electro...

Dual N-channel dual gate MOSFET

Manufacturer: Quanzhou Jinmei Electro...

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BF1207_15 JMNIC | Alldatasheet

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Product proﬁle

1.1 General description

The BF1207 is a combination of two dual gate MOSFET ampliﬁers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The BF1207 has a SOT363 micro-miniature plastic package.

1.2 Features

■ Two low noise gain controlled ampliﬁers in a single package. One with a fully integrated bias and one with partly integrated bias ■ Internal switch to save external components ■ Superior cross-modulation performance during AGC ■ High forward transfer admittance ■ High forward transfer admittance to input capacitance ratio

1.3 Applications

■ Gain controlled low noise ampliﬁers for Very High Frequency (VHF) and Ultra High Frequency (UHF) applications with 5 V supply voltage, such as digital and analog television tuners and professional communication equipment BF1207 Dual N-channel dual gate MOSFET Rev. 01 — 28 July 2005 Product data sheet CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. MSC895

1.4 Quick reference data

[1] Tsp is the temperature at the soldering point of the source lead. 2. Pinning information Table 1: Quick reference data Per MOSFET unless otherwise speciﬁed. Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage DC - - 6 V ID drain current DC - - 30 mA Ptot total power dissipation Tsp ≤ 107 °C [1] - - 180 mW yfs forward transfer admittance f = 1 MHz ampliﬁer A; ID =1 8m A 2 5 3 0 4 0 m S ampliﬁer B; ID =1 4m A 2 6 3 1 4 1 m S C iss(G1) input capacitance at gate1 f = 100 MHz ampliﬁer A - 2.2 2.7 pF ampliﬁer B - 1.9 2.4 pF C rss reverse transfer capacitance f = 100 MHz - 20 - fF NF noise ﬁgure ampliﬁer A; f = 400 MHz - 1.3 - dB ampliﬁer B; f = 800 MHz - 1.4 - dB Xmod cross-modulation input level for k = 1 % at 40 dB AGC ampliﬁer A 100 105 - dB µV ampliﬁer B 100 103 - dB µV Tj junction temperature - - 150 °C Table 2: Discrete pinning Pin Description Simpliﬁed outline Symbol 1 drain (AMP A) 2 source 3 drain (AMP B) 4 gate1 (AMP B) 5 gate2 6 gate1 (AMP A) 13 2 456 sym108 G1A G1B S DB DA AMP A AMP B

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 28 July 2005 3 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 3. Ordering information 4. Marking [1] * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. 5. Limiting values [1] Tsp is the temperature at the soldering point of the source lead. Table 3: Ordering information Type number Package Name Description Version BF1207 - plastic surface mounted package; 6 leads SOT363 Table 4: Marking Type number Marking code[1] BF1207 M2* Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per MOSFET V DS drain-source voltage DC - 6 V ID drain current DC - 30 mA IG1 gate1 current - ±10 mA IG2 gate2 current - ±10 mA Ptot total power dissipation T sp ≤ 107 °C [1] - 180 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 28 July 2005 4 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 6. Thermal characteristics 7. Static characteristics Fig 1. Power derating curve Tsp (°C) 0 200 15050 100 001aac741 100 150 200 250 Ptot (mW) Table 6: Thermal characteristics Symbol Parameter Conditions Typ Unit R th(j-sp) thermal resistance from junction to soldering point

240 K/W

Table 7: Static characteristics Tj=2 5°C. Symbol Parameter Conditions Min Typ Max Unit Per MOSFET; unless otherwise speciﬁed V (BR)DSS drain-source breakdown voltage VG1-S =V G2-S =0V ; ID =1 0µA ampliﬁer A 6 - - V ampliﬁer B 6 - - V V (BR)G1-SS gate1-source breakdown voltage VGS =V DS =0V ; IG1-S =1 0m A 6 - 1 0 V V(BR)G2-SS gate2-source breakdown voltage VGS =V DS =0V ; IG2-S =1 0m A 6 - 1 0 V VF(S-G1) forward source-gate1 voltage VG2-S =V DS =0V ; IS-G1 = 10 mA 0.5 - 1.5 V VF(S-G2) forward source-gate2 voltage VG1-S =V DS =0V ; IS-G2 = 10 mA 0.5 - 1.5 V VG1-S(th) gate1-source threshold voltage VDS =5V ; VG2-S =4V ; ID = 100µA 0.3 - 1.0 V VG2-S(th) gate2-source threshold voltage VDS =5V ; VG1-S =5V ; ID = 100µA 0.4 - 1.0 V IDSX drain-source current V G2-S =4V ; VDS =5V ; RG1 =6 8kΩ ampliﬁer A [1] 13 - 23 mA ampliﬁer B [2] 9 - 19 mA

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 28 July 2005 5 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET [1] R G1 connects gate1 (A) to VGG = 5 V (seeFigure3). [2] R G1 connects gate1 (B) to VGG = 0 V (seeFigure3). IG1-S gate1 cut-off current V G2-S =V DS(A) =0V ampliﬁer A; VG1-S(A) =5V ; VDS(B) = 0 V - - 50 nA ampliﬁer B; VG1-S(A) =0V ; ID(B) =0A - - 5 0 n A IG2-S gate2 cut-off current V G2-S =4V ; VG1-S =V DS(A) =V DS(B) = 0 V; - - 20 nA Table 7: Static characteristics …continued Tj=2 5°C. Symbol Parameter Conditions Min Typ Max Unit (1) ID(A); RG1 =4 7kΩ . (2) ID(A); RG1 =6 8kΩ . (3) ID(A); RG1 = 100 kΩ . (4) ID(B); RG1 = 100 kΩ . (5) ID(B); RG1 =6 8kΩ . (6) ID(B); RG1 =4 7kΩ . VDS(A) =V DS(B) =5V ; VG2-S =4V ; Tj=2 5°C. VGG = 5 V: ampliﬁer A is on; ampliﬁer B is off. VGG = 0 V: ampliﬁer A is off; ampliﬁer B is on. Fig 2. Drain currents of MOSFET A and B as function of VGG Fig 3. Functional diagram 001aac742 ID (mA) VGG (V) 05 4231 (2) (5) (4) (6) (3) (1) 001aac881 R G1 VGG G1A G1B DA S DB

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 28 July 2005 6 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 8. Dynamic characteristics

8.1 Dynamic characteristics for ampliﬁer A

[1] For the MOSFET not in use: VG1-S(B) = 0 V; VDS(B) =0V . [2] Measured inFigure29 test circuit. Table 8: Dynamic characteristics for ampliﬁer A Common source; Tamb =2 5°C; VG2-S =4V ; VDS =5V ; ID = 18 mA.[1] Symbol Parameter Conditions Min Typ Max Unit yfs forward transfer admittance Tj=2 5°C2 5 3 0 4 0 m S C iss(G1) input capacitance at gate1 f = 100 MHz - 2.2 2.7 pF C iss(G2) input capacitance at gate2f = 1 MHz - 3.5 - pF C oss output capacitance f = 100 MHz - 0.9 - pF C rss reverse transfer capacitance f = 100 MHz - 20 - fF G tr power gain B S =B S(opt); BL =B L(opt) f = 200 MHz; GS = 2 mS; GL = 0.5 mS 30 34 38 dB f = 400 MHz; GS = 2 mS; GL =1m S 2 6 3 0 3 4 d B f = 800 MHz; GS = 3.3 mS; GL = 1 mS 21 25 29 dB NF noise ﬁgure f = 11 MHz; G S = 20 mS; BS = 0 S - 3.0 - dB f = 400 MHz; YS =Y S(opt) - 1.3 - dB f = 800 MHz; YS =Y S(opt) - 1.4 - dB Xmod cross-modulation input level for k = 1 %; f w = 50 MHz; funw =6 0M H z [2] at 0 dB AGC 90 - - dB µV at 10 dB AGC - 90 - dB µV at 20 dB AGC - 99 - dB µV at 40 dB AGC 100 105 - dB µV

8.1.1 Graphs for ampliﬁer A

(1) VG2-S =4V . (2) VG2-S = 3.5 V. (3) VG2-S =3V . (4) VG2-S = 2.5 V. (5) VG2-S =2V . (6) VG2-S = 1.5 V. (7) VG2-S =1V . VDS(A) =5V ; Tj=2 5°C. VDS(A) =5V ; VG2-S =4V ; Tj=2 5°C. Fig 4. Ampliﬁer A: transfer characteristics; typical values Fig 5. Ampliﬁer A: output characteristics; typical values VG1-S (V) 001aac882 ID (mA) (7) (6) (5) (4) (1) (2) (3) 001aaa883 VDS (V) 06 42 ID (mA) (2) (3) (6) (9) (8) (5) (1) (4) (7)

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 28 July 2005 8 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET (1) VG2-S =4V . (2) VG2-S = 3.5 V. (3) VG2-S =3V . (4) VG2-S = 2.5 V. (5) VG2-S =2V . (6) VG2-S = 1.5 V. (7) VG2-S =1V . VDS(A) =5V ; Tj=2 5°C. (1) RG1(A) =3 9kΩ . (2) RG1(A) =4 7kΩ . (3) RG1(A) =6 8kΩ . (4) RG1(A) =8 2kΩ . VG2-S =4V ; Tj=2 5°C. Fig 6. Ampliﬁer A: forward transfer admittance as a function of drain current; typical values Fig 7. Ampliﬁer A: drain current as a function of VDS and VGG ; typical values VG2-S =4V , Tj=2 5°C, RG1(B) =6 8kΩ (connected to ground); seeFigure3. Fig 8. Ampliﬁer A: drain current of ampliﬁer A as a function of supply voltage of A and B ampliﬁer; typical values ID (mA) 03 2 2481 6 001aac884 yfs (mS) (1) (2) (6)(7) (5) (4) (3) 001aac885 VGG = VDS (V) 06 42 ID (mA) (1) (2) (3) (4) (5) (7) (6) Vsupply (V) 05 4231 001aac886 ID (mA)

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 28 July 2005 9 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET VDS(A) =V DS(B) =5V ; VG1-S(B) =0V ; fw = 50 MHz; funw = 60 MHz; Tamb =2 5°C; seeFigure29. VDS(A) =V DS(B) =5V ; VG1-S(B) = 0 V; f = 50 MHz; see Figure29. Fig 9. Ampliﬁer A: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values Fig 10. Ampliﬁer A: gain reduction as a function of AGC voltage; typical values VDS(A) =V DS(B) =5V ; VG1-S(B) = 0 V; f = 50 MHz; Tamb =2 5°C; seeFigure29. Fig 11. Ampliﬁer A: drain current as a function of gain reduction; typical values gain reduction (dB) 05 0 4020 3010 001aac887 100 110 120 Vunw (dBµV) VAGC (V) 04 312 001aac888 gain reduction (dB) gain reduction (dB) 05 0 4020 3010 001aac889 ID (mA)

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 28 July 2005 10 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET VDS(A) =5V ; VG2-S =4V ; VDS(B) =V G1-S(B) =0V ; ID(A) = 18 mA. VDS(A) =5V ; VG2-S =4V ; VDS(B) =V G1-S(B) =0V ; ID(A) = 18 mA. Fig 12. Ampliﬁer A: input admittance as a function of frequency; typical values Fig 13. Ampliﬁer A: forward transfer admittance and phase as a function of frequency; typical values VDS(A) =5V ; VG2-S =4V ; VDS(B) =V G1-S(B) =0V ; ID(A) = 18 mA. VDS(A) =5V ; VG2-S =4V ; VDS(B) =V G1-S(B) =0V ; ID(A) = 18 mA. Fig 14. Ampliﬁer A: reverse transfer admittance and phase as a function of frequency: typical values Fig 15. Ampliﬁer A: output admittance as a function of frequency; typical values 001aac890 f (MHz) 10 10 3102 10−1 102 bis, gis (mS) 10−2 bis gis f (MHz) 10 10 3102 001aac891 102 |yfs| (mS) −10 −102 ϕfs (deg) |yfs| ϕfs 001aac892 102 103 |yrs| (µS) f (MHz) 10 10 3102 −102 −10 −103 ϕrs (deg) |yrs| ϕrs 001aac893 10−1 bos, gos (mS) 10−2 f (MHz) 10 10 3102 bos gos

8.1.2 Scattering parameters for ampliﬁer A

Table 9: Scattering parameters for ampliﬁer A VDS(A) =5V ; VG2-S =4V ; ID(A) = 18 mA; VDS(B) =0V ;V G1-S(B) =0V ; Tamb = 25°C; typical values. f (MHz) s11 s21 s12 s22 Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg)

8.2 Dynamic characteristics for ampliﬁer B

[1] For the MOSFET not in use: VG1-S(A) = 0 V; VDS(A) =0 V . [2] Measured inFigure30 test circuit. Table 10: Dynamic characteristics for ampliﬁer B Common source; Tamb =2 5°C; VG2-S =4V ; VDS =5V ; ID = 14 mA.[1] Symbol Parameter Conditions Min Typ Max Unit yfs forward transfer admittance Tj=2 5°C2 6 3 1 4 1 m S C iss(G1) input capacitance at gate1 f = 100 MHz - 1.8 2.3 pF C iss(G2) input capacitance at gate2f = 1 MHz - 3.5 - pF C oss output capacitance f = 100 MHz - 0.8 - pF C rss reverse transfer capacitance f = 100 MHz - 20 - fF G tr power gain B S =B S(opt); BL =B L(opt) f = 200 MHz; GS = 2 mS; GL = 0.5 mS 30 34 38 dB f = 400 MHz; GS = 2 mS; GL =1m S 2 7 3 1 3 5 d B f = 800 MHz; GS = 3.3 mS; GL = 1 mS 23 27 31 dB NF noise ﬁgure f = 11 MHz; G S = 20 mS; BS =0S - 5 - d B f = 400 MHz; YS =Y S(opt) - 1.3 - dB f = 800 MHz; YS =Y S(opt) - 1.4 - dB Xmod cross-modulation input level for k=1% ;f w = 50 MHz; funw =6 0M H z [2] at 0 dB AGC 90 - - dB µV at 10 dB AGC - 88 - dB µV at 20 dB AGC - 94 - dB µV at 40 dB AGC 100 103 - dB µV

8.2.1 Graphs for ampliﬁer B

(1) VG2-S =4V . (2) VG2-S = 3.5 V. (3) VG2-S =3V . (4) VG2-S = 2.5 V. (5) VG2-S =2V . (6) VG2-S = 1.5 V. (7) VG2-S =1V . VDS(B) =5V ; VG1-S(A) =0V ; Tj=2 5°C. VG2-S =4V ; VG1-S(A) =0V ; Tj=2 5°C. Fig 16. Ampliﬁer B: transfer characteristics; typical values Fig 17. Ampliﬁer B: output characteristics; typical values VG1-S (V) 02 1.60.8 1.20.4 001aac894 I D (mA) (4) (5) (2) (3) (1) (7) (6) 001aac895 VDS (V) 06 42 ID (mA) (2) (6) (7) (4) (3) (5) (1)

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 28 July 2005 14 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET (1) VG2-S =4V . (2) VG2-S = 3.5 V. (3) VG2-S =3V . (4) VG2-S = 2.5 V. (5) VG2-S =2V . (6) VG2-S = 1.5 V. (7) VG2-S =1V . VDS(B) =5V ; VG1-S(A) =0V ; Tj=2 5°C. (1) VDS =5V . (2) VDS = 4.5 V. (3) VDS =4V . (4) VDS = 3.5 V. (5) VDS =3V . VG1-S(A) =0V ; Tj=2 5°C. Fig 18. Ampliﬁer B: forward transfer admittance as a function of drain current; typical values Fig 19. Ampliﬁer B: drain current as function of gate2 voltage; typical values VDS(B) =5V ; VG1-S(A) =0V ; Tj=2 5°C. V DS(B) =5V ; VG2-S =4V ; VG1-S(A) =0V ; Tj=2 5°C. Fig 20. Ampliﬁer B: drain current as a function of drain source voltage; typical values Fig 21. Ampliﬁer B: drain current as a function of gate1 current; typical values ID (mA) 03 2 2481 6 001aac896 yfs (mS) (1) (6) (5) (4) (3) (2) (7) VG2-S (V) 05 4231 001aac897 ID (mA) (1) (2) (3) (4) (5) 001aac898 VDS (V) 06 42 ID(A) (mA) IG1 (µA) −40 0 −20 −10−30 001aac899 ID (mA)

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 28 July 2005 15 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET VDS(B) =5V ; VGG =5V ; VDS(A) =V G1-S(A) =0V ; R G1(B) = 150 kΩ (connected to VGG ); fw = 50 MHz; funw = 60 MHz; Tamb =2 5°C; seeFigure30. VDS(B) =5V ; VGG =5V ; VDS(A) =V G1-S(A) =0V ; R G1(B) = 150 kΩ (connected to VGG ); f = 50 MHz; Tamb =2 5°C; seeFigure30. Fig 22. Ampliﬁer B: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values Fig 23. Ampliﬁer B: typical gain reduction as a function of AGC voltage; typical values VDS(B) =5V ; VGG =5V ; VDS(A) =V G1-S(A) =0V ; RG1(B) = 150 kΩ (connected to VGG ); f = 50 MHz; Tamb =2 5°C; see Figure30. Fig 24. Ampliﬁer B: drain current as a function of gain reduction; typical values 001aac900 gain reduction (dB) 06 0 4020 100 110 120 Vunw (dBµV) VAGC (V) 04 312 001aac901 gain reduction (dB) 001aac902 gain reduction (dB) 06 0 4020 ID (mA)

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 28 July 2005 16 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET VDS(B) =5V ; VG2-S =4V ; VDS(A) =V G1-S(A) =0V ; ID(B) = 14 mA. VDS(B) =5V ; VG2-S =4V ; VDS(A) =V G1-S(A) =0V ; ID(B) = 14 mA. Fig 25. Ampliﬁer B: input admittance as a function of frequency; typical values Fig 26. Ampliﬁer B: forward transfer admittance and phase as a function of frequency; typical values VDS(B) =5V ; VG2-S =4V ; VDS(A) =V G1-S(A) =0V ; ID(B) = 14 mA. VDS(B) =5V ; VG2-S =4V ; VDS(A) =V G1-S(A) =0V ; ID(B) = 14 mA. Fig 27. Ampliﬁer B: reverse transfer admittance and phase as a function of frequency; typical values Fig 28. Ampliﬁer B: output admittance as a function of frequency; typical values 001aac903 f (MHz) 10 10 3102 10−1 102 bis, gis (mS) 10−2 bis gis f (MHz) 10 10 3102 001aac904 102 |yfs| (mS) −10 −102 ϕfs (deg) |yfs| ϕfs 001aac905 102 103 |yrs| (µS) −102 −10 −103 ϕrs (deg) f (MHz) 10 10 3102 |yrs| ϕrs 001aac906 10−1 bos, gos (mS) 10−2 f (MHz) 10 10 3102 bos gos

8.2.2 Scattering parameters for ampliﬁer B

Table 11: Scattering parameters for ampliﬁer B VDS(B) =5V ; VG2-S =4V ; ID(B) = 14 mA; VDS(A) =0V ;V G1-S(A) =0V ; Tamb = 25°C; typical values. f (MHz) s11 s21 s12 s22 Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg)

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 28 July 2005 18 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 9. Test information Fig 29. Cross-modulation test set-up for ampliﬁer A 50 Ω 10 kΩ R GEN 50 Ω 50 Ω R G1 4.7 nF 4.7 nF 4.7 nF G2 S G1A DA DB 4.7 nF 4.7 nF 4.7 nF G1B BF1207 VGG 5 V VDS(A) 5 V VDS(B) VAGC 2.2 µH 2.2 µH R L 50 Ω 001aac907 Vi Fig 30. Cross-modulation test set-up for ampliﬁer B 50 Ω 10 kΩ R GEN 50 Ω R L 50 Ω50 Ω R G1 4.7 nF 4.7 nF 4.7 nF G2 S G1A DA DB 4.7 nF 4.7 nF 4.7 nFG1B BF1207 VGG 0 V VDS(A) 5 V VDS(B) VAGC 2.2 µH 2.2 µH 001aac908 Vi

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 28 July 2005 19 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 10. Package outline Fig 31. Package outline SOT363 REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT363 SC-88 wB Mbp D e pin 1 index A Lp Q detail X H E E v M A AB y 0 1 2 mm scale c X 13 2 456 Plastic surface mounted package; 6 leads SOT363 UNIT A 1 max bp cD E e1 H E Lp Qy wv mm 0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0 0.2 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 0.25 0.15 A 1.1 0.8 97-02-28 04-11-08

9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 28 July 2005 20 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 11. Revision history Table 12: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BF1207_1 20050728 Product data sheet - 9397 750 14955 -

Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 28 July 2005 21 of 22 12. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Deﬁnitions Short-form speciﬁcation —The data in a short-form speciﬁcation is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation. 14. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speciﬁed. 15. Trademarks Notice —All referenced brands, product names, service names and trademarks are the property of their respective owners. 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com Level Data sheet status[1] Product status[2][3] Deﬁnition I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips Semiconductors reserves the right to change the speciﬁcation in any manner without notice. II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

© Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 28 July 2005 Document number: 9397 750 14955 Published in The Netherlands Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET 17. Contents

Product Information

BF1207 specifications and overview.

Summary

Dual N-channel dual gate MOSFET

Description

Dual N-channel dual gate MOSFET

Source title BF1207_15 Datasheet(PDF) - Quanzhou Jinmei Electronic Co.,Ltd.

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