BF1206F_2015

BF1206F_2015 JMNIC | Alldatasheet

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Technical content

1. Product profile

1.1 General description

The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in a SOT666 micro-miniature plastic package.

1.2 Features

■ Two low noise gain controlled amplifiers in a single package ■ Superior cross-modulation performance during AGC ■ High forward transfer admittance ■ High forward transfer admittance to input capacitance ratio ■ Suited for 3 volt applications

1.3 Applications

■ Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High Frequency (UHF) applications with 3 V supply voltage, such as digital and analog television tuners BF1206F Dual N-channel dual gate MOSFET Rev. 01 — 30 January 2006 Product data sheet CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 2 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET

1.4 Quick reference data

1. Pinning information 3. Ordering information Table 1: Quick reference data Per MOSFET unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage (DC) - - 6 V ID drain current (DC) - - 30 mA |yfs| forward transfer admittance ID =4m A amplifier A 17 22 32 mS amplifier B 17 22 32 mS C iss(G1) input capacitance at gate1 ID = 4 mA; f = 100 MHz amplifier A - 2.4 2.9 pF amplifier B - 1.7 2.2 pF NF noise figure I D = 4 mA amplifier A; f = 400 MHz - 1.0 1.6 dB amplifier B; f = 800 MHz - 1.0 1.6 dB Xmod cross modulation input level for k = 1 % at 40 dB AGC amplifier A 92 97 - dB µV amplifier B 93 98 - dB µV Table 2: Discrete pinning Pin Description Simplified outline Symbol 1 gate1 (AMP A) 2 source 3 gate1 (AMP B) 4 drain (AMP B) 5 drain (AMP A) 6 gate2 123 456 sym111 AMP A AMP B G1A S G1B DA DB Table 3: Ordering information Type number Package Name Description Version BF1206F - plastic surface mounted package; 6 leads SOT666

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 3 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 4. Marking 5. Limiting values [1] Tsp is the temperature at the solder point of the source lead. 6. Thermal characteristics Table 4: Marking Type number Marking code BF1206F 2N Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per MOSFET V DS drain-source voltage (DC) - 6 V ID drain current (DC) - 30 mA IG1 gate1 current - ±10 mA IG2 gate2 current - ±10 mA Ptot total power dissipation T sp ≤ 107 °C [1] - 180 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Fig 1. Power derating curve Tsp (˚C) 0 200 15050 100 001aac193 100 150 200 250 Ptot (mW) Table 6: Thermal characteristics Symbol Parameter Conditions Typ Unit R th(j-sp) thermal resistance from junction to solder point

240 K/W

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 4 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 7. Static characteristics [1] R G1 connects gate 1 to VGG = 2.8 V. 8. Dynamic characteristics

8.1 Dynamic characteristics for amplifier A

Table 7: Static characteristics Tj=2 5°C. Symbol Parameter Conditions Min Typ Max Unit Per MOSFET; unless otherwise specified V (BR)DSS drain-source breakdown voltage VG1-S =V G2-S =0V ; ID =1 0µA amplifier A 6 - - V amplifier B 6 - - V V (BR)G1-SS gate1-source breakdown voltage VGS =V DS =0V ; IG1-S =1 0m A 6 - 1 0 V V(BR)G2-SS gate2-source breakdown voltage VGS =V DS =0V ; IG2-S =1 0m A 6 - 1 0 V VF(S-G1) forward source-gate1 voltage VG2-S =V DS =0V ; IS-G1 = 10 mA 0.5 - 1.5 V VF(S-G2) forward source-gate2 voltage VG1-S =V DS =0V ; IS-G2 = 10 mA 0.5 - 1.5 V VG1-S(th) gate1-source threshold voltage VDS =5V ; VG2-S =4V ; ID = 100µA 0.3 - 1.0 V VG2-S(th) gate2-source threshold voltage VDS =5V ; VG1-S =5V ; ID = 100µA 0.35 - 1.0 V IDSX drain cut-off current V G2-S = 2.5 V; VDS = 2.8 V [1] amplifier A; RG1 = 270 kΩ 3 - 6.5 mA amplifier B; RG1 = 220 kΩ 3 - 6.5 mA IG1-S gate1 cut-off current V G1-S =5V ; VG2-S =V DS =0V amplifier A - - 50 nA amplifier B - - 50 nA I G2-S gate2 cut-off current V G2-S =5V ; VG1-S =V DS =0V ; - - 2 0 n A Table 8: Dynamic characteristics for amplifier A Common source; Tamb =2 5°C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA. Symbol Parameter Conditions Min Typ Max Unit |yfs| forward transfer admittance Tj=2 5°C1 7 2 2 3 2 m S C iss(G1) input capacitance at gate1 f = 100 MHz [1] - 2.4 2.9 pF C iss(G2) input capacitance at gate2 f = 100 MHz [1] - 3.2 - pF C oss output capacitance f = 100 MHz [1] - 1.1 - pF C rss reverse transfer capacitance f = 100 MHz [1] -1 53 0 f F G tr transducer power gain B S =B S(opt); BL =B L(opt) [1] f = 200 MHz; GS = 2 mS; GL = 0.5 mS - 31 - dB f = 400 MHz; GS = 2 mS; GL =1m S - 2 8 - d B f = 800 MHz; GS = 3.3 mS; GL = 1 mS - 23 - dB NF noise figure f = 11 MHz; G S = 20 mS; BS = 0 - 3.5 - dB f = 400 MHz; YS = YS(opt) - 1.0 1.6 dB f = 800 MHz; YS = YS(opt) - 1.1 1.7 dB

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 5 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET [1] Calculated from measured S-parameters. [2] Measured inFigure32 test circuit.

8.1.1 Graphs for amplifier A

Xmod cross modulation input level for k = 1 %; f w = 50 MHz; funw =6 0M H z [2] at 0 dB AGC 88 - - dB µV at 10 dB AGC - 85 - dB µV at 40 dB AGC 92 97 - dB µV Table 8: Dynamic characteristics for amplifier A …continued Common source; Tamb =2 5°C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA. Symbol Parameter Conditions Min Typ Max Unit (1) VG2-S = 2.5 V. (2) VG2-S = 2.0 V. (3) VG2-S = 1.5 V. (4) VG2-S = 1.0 V. VDS(A) = 2.8 V; Tj=2 5°C. VG2-S = 2.5 V; Tj=2 5°C. Fig 2. Amplifier A: transfer characteristics; typical values Fig 3. Amplifier A: output characteristics; typical values VG1 -S (V) 001aad896 I D (mA) (1) (2) (3) (4) VDS (V) 04 312 001aad897 ID (mA) (7) (6) (5) (4) (3) (2) (1)

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 6 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET (1) VG2-S = 2.5 V. (2) VG2-S = 2.0 V. (3) VG2-S = 1.5 V. (4) VG2-S = 1.0 V. VDS(A) = 2.8 V; Tj=2 5°C. (1) VG2-S = 2.5 V. (2) VG2-S = 2.0 V. (3) VG2-S = 1.5 V. (4) VG2-S = 1.0 V. VDS(A) = 2.8 V; Tj=2 5°C. Fig 4. Amplifier A: gate1 current as a function of gate1 voltage; typical values Fig 5. Amplifier A: forward transfer admittance as a function of drain current; typical values Figure32. Fig 6. Amplifier A: drain current as a function of gate1 current; typical values Fig 7. Amplifier A: drain current as a function of gate1 supply voltage (=VGG ); typical values VG1 -S (V) 001aad898 100 IG1 (mA) (1) (2) (3) (4) ID (mA) 01 6 1248 001aad899 ‰Yfs‰ (mS) (1) (2) (3)(4) 001aad900 IG1 (mA) 03 0 2010 ID (mA) VGG (V) 03 21 001aad901 I D (mA)

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 7 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET (1) RG1 = 100 kΩ . (2) RG1 = 120 kΩ . (3) RG1 = 150 kΩ . (4) RG1 = 180 kΩ . (5) RG1 = 220 kΩ . (6) RG1 = 270 kΩ . (7) RG1 = 330 kΩ . (8) RG1 = 390 kΩ . (9) RG1 = 470 kΩ . VG2-S = 2.5 V; Tj=2 5°C; seeFigure32. (1) VGG = 1.0 V (2) VGG = 1.5 V (3) VGG = 2.0 V (4) VGG = 2.5 V (5) VGG = 3.0 V Tj=2 5°C; RG1(A) = 270 kΩ (connected to VGG ); see Figure32. Fig 8. Amplifier A: drain current as a function of VDS and VGG ; typical values Fig 9. Amplifier A: drain current as a function of gate2 voltage; typical values VGG = VDS (V) 04 312 001aad902 ID (mA) (1) (2) (3) (4) (5) (6) (7) (8) (9) VG2 -S (V) 04 312 001aad903 I D (mA) (1) (2) (3) (4) (5)

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 8 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET VDS(A) = 2.8 V; VGG = 2.8 V; ID(nom) = 4 mA; Tamb =2 5°C. VDS(A) = 2.8 V; VGG = 2.8 V; VG2(nom) = 2.5 V; fw = 50 MHz; funw = 60 MHz; ID(nom) = 4 mA; Tamb =2 5°C. Fig 10. Amplifier A: typical gain reduction as a function of the AGC voltage; typical values Fig 11. Amplifier A: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values VDS(A) = 2.8 V; VGG = 2.8 V; VG2(nom) = 2.5 V; RG1(A) = 270 kΩ ; f = 50 MHz; Tamb =2 5°C. Fig 12. Amplifier A: typical drain current as a function of gain reduction; typical values 001aad904 VAGC (V) 03 21 gain reduction (dB) 001aad905 gain reduction (dB) 06 0 4020 100 110 V unw (dBmV) 001aad906 gain reduction (dB) 06 0 4020 ID (mA)

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 9 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET VDS(A) = 2.8 V; VG2-S = 2.5 V; VDS(B) =0V ; ID(A) = 4 mA. VDS(A) = 2.8 V; VG2-S = 2.5 V; VDS(B) =0V ; ID(A) = 4 mA. Fig 13. Amplifier A: input admittance and phase as a function of frequency; typical values Fig 14. Amplifier A: forward transfer admittance and phase as a function of frequency; typical values VDS(A) = 2.8 V; VG2-S = 2.5 V; VDS(B) =0V ; ID(A) = 4 mA. VDS(A) = 2.8 V; VG2-S = 2.5 V; VDS(B) =0V ; ID(A) = 4 mA. Fig 15. Amplifier A: reverse transfer admittance and phase as a function of frequency: typical values Fig 16. Amplifier A: output admittance and phase as a function of frequency; typical values 001aad907 f (MHz) 10 10 3102 10-1 102 bis, gis (mS) 10-2 bis gis f (MHz ) 10 10 3102 001aad908 102 ‰Yfs‰ (mS) jfs (deg) -10 -102 ‰Yfs‰ jfs f (MHz ) 10 10 3102 001aad909 102 ‰Yrs‰ (mS) jrs (deg) 102 jrs ‰Yrs‰ 001aad910 10-1 bos, gos (mS) 10-2 f (MHz) 10 10 3102 bos gos

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 10 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET

8.1.2 Scattering parameters for amplifier A

8.2 Noise data for amplifier A

8.3 Dynamic characteristics for amplifier B

Table 9: Scattering parameters for amplifier A VDS(A) = 2.8 V; VG2-S = 2.5 V; ID(A) = 4 mA; VDS(B) =0V ;V G1-S(B) =0V ; Tamb = 25°C; typical values. f (MHz) s11 s21 s12 s22 Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Table 10: Noise data for amplifier A VDS(A) = 2.8 V; VG2-S = 2.5 V; ID(A) = 4 mA. f (MHz) NF min (dB) Γopt rn (ratio) ratio (deg) 400 1.0 0.78 26 0.84 800 1.1 0.87 53 0.87 Table 11: Dynamic characteristics for amplifier B Common source; Tamb =2 5°C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA. Symbol Parameter Conditions Min Typ Max Unit |yfs| forward transfer admittance Tj=2 5°C - 22 - mS C iss(G1) input capacitance at gate1 f = 100 MHz [1] - 1.7 2.2 pF C iss(G2) input capacitance at gate2 f = 100 MHz [1] - 4.0 - pF C oss output capacitance f = 100 MHz [1] - 0.85 - pF C rss reverse transfer capacitance f = 100 MHz [1] -3 04 5 f F G tr transducer power gain B S =B S(opt); BL =B L(opt) [1] f = 200 MHz; GS = 2 mS; GL = 0.5 mS - 32 - dB f = 400 MHz; GS = 2 mS; GL =1m S - 2 9 - d B f = 800 MHz; GS = 3.3 mS; GL = 1 mS - 25 - dB NF noise figure f = 11 MHz; G S = 20 mS; BS = 0 - 4.5 - dB f = 400 MHz; YS = YS(opt) - 0.9 1.5 dB f = 800 MHz; YS = YS(opt) - 1.0 1.6 dB

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 11 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET [1] Calculated from measured S-parameters. [2] Measured inFigure32 test circuit.

8.3.1 Graphs for amplifier B

Xmod cross modulation input level for k=1% ;f w = 50 MHz; funw =6 0M H z [2] at 0 dB AGC 89 - - dB µV at 10 dB AGC - 85 - dB µV at 40 dB AGC 93 98 - dB µV Table 11: Dynamic characteristics for amplifier B …continued Common source; Tamb =2 5°C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA. Symbol Parameter Conditions Min Typ Max Unit (1) VG2-S = 2.5 V. (2) VG2-S = 2.0 V. (3) VG2-S = 1.5 V. (4) VG2-S = 1.0 V. VDS(B) = 2.8 V; Tj=2 5°C. VG2-S = 2.5 V; Tj=2 5°C. Fig 17. Amplifier B: transfer characteristics; typical values Fig 18. Amplifier B: output characteristics; typical values VG1 -S (V) 001aad911 I D (mA) (1) (2) (3) (4) VDS (V) 04 312 001aad912 ID (mA) (7) (6) (5) (4) (3) (2) (1)

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 12 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET (1) VG2-S = 2.5 V. (2) VG2-S = 2.0 V. (3) VG2-S = 1.5 V. (4) VG2-S = 1.0 V. VDS(B) = 2.8 V; Tj=2 5°C. (1) VG2-S = 2.5 V. (2) VG2-S = 2.0 V. (3) VG2-S = 1.5 V. (4) VG2-S = 1.0 V. VDS(B) = 2.8 V; Tj=2 5°C. Fig 19. Amplifier B: gate1 current as a function of gate1 voltage; typical values Fig 20. Amplifier B: forward transfer admittance as a function of drain current; typical values see Figure32. Fig 21. Amplifier B: drain current as a function of gate1 current; typical values Fig 22. Amplifier B: drain voltage as a function of gate1 supply voltage (=VGG ); typical values VG1 -S (V) 001aad913 100 IG1 (mA) (1) (2) (3) (4) ID (mA) 01 6 1248 001aad914 ‰Yfs‰ (mS) (1) (2) (3)(4) 001aad915 IG1 (mA) 03 0 2010 ID (mA) VGG (V) 03 21 001aad916 I D (mA)

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 13 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET (1) RG1 = 120 kΩ . (2) RG1 = 150 kΩ . (3) RG1 = 180 kΩ . (4) RG1 = 220 kΩ . (5) RG1 = 270 kΩ . (6) RG1 = 330 kΩ . (7) RG1 = 390 kΩ . (8) RG1 = 470 kΩ . VG2-S = 2.5 V; RG1(B) connected to VGG ; see Figure32. (1) VGG = 3.0 V. (2) VGG = 2.5 V. (3) VGG = 2.0 V. (4) VGG = 1.5 V. (1) VGG = 1.0 V. R G1(B) = 220 kΩ ; Tj=2 5°C; seeFigure32. Fig 23. Amplifier B: drain current as a function of VDS and VGG ; typical values Fig 24. Amplifier B: drain current as a function of gate2 voltage; typical values VGG = VDS (V) 04 312 001aad917 ID (mA) (1) (2) (3) (4) (5) (7) (8) (6) VG2 -S (V) 04 312 001aad918 I D (mA) (1) (2) (3) (4) (5)

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 14 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET VDS(A) = 2.8 V; VG2(nom) = 2.5 V; ID(nom) = 4 mA; Tamb =2 5°C. VDS(B) = 2.8 V; VG2 = 2.5 V; ID(nom) = 4 mA; fw = 50 MHz; funw = 60 MHz; Tamb =2 5°C. Fig 25. Amplifier B: typical gain reduction as a function of the AGC voltage; typical values Fig 26. Amplifier B: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values VDS(B) = VGG = 2.8 V; VG2(nom) = 2.5 V; RG1(B) = 220 kW; f = 50 MHz; Tamb = 25°C. Fig 27. Amplifier B: typical drain current as a function of gain reduction; typical values 001aad919 VAGC (V) 03 21 gain reduction (dB) 001aad920 gain reduction (dB) 06 0 4020 100 110 V unw (dBmV) 001aad921 gain reduction (dB) 06 0 4020 ID (mA)

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 15 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET VDS(B) = 2.8 V; VG2-S = 2.5 V; VDS(A) =0V ; ID(B) = 4 mA. VDS(B) = 2.8 V; VG2-S = 2.5 V; VDS(A) =0V ; ID(B) = 4 mA. Fig 28. Amplifier B: input admittance and phase as a function of frequency; typical values Fig 29. Amplifier B: forward transfer admittance and phase as a function of frequency; typical values VDS(B) = 2.8 V; VG2-S = 2.5 V; VDS(A) =0V ; ID(B) = 4 mA. VDS(B) = 2.8 V; VG2-S = 2.5 V; VDS(A) =0V ; ID(B) = 4 mA. Fig 30. Amplifier B: reverse transfer admittance and phase as a function of frequency: typical values Fig 31. Amplifier B: output admittance and phase as a function of frequency; typical values 001aad922 f (Mhz) 10 10 3102 10-1 102 bis, gis (mS) 10-2 bis gis f (MHz ) 10 10 3102 001aad923 102 ‰Yfs‰ (mS) jfs (deg) -10 -102 ‰Yfs‰ jfs jrs (deg) ‰Yrs‰ 001aad924 10-1 102 10-2 ‰Yrs‰ (mS) 10-3 f (MHz) 10X 103102 jrs 103 001aad925 10-1 bos, gos (mS) 10-2 f (MHz) 10 10 3102 bos gos

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 16 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET

8.3.2 Scattering parameters for amplifier B

8.3.3 Noise data for amplifier B

1. Test information Table 12: Scattering parameters for amplifier B VDS(B) = 2.8 V; VG2-S = 2.5 V; ID(B) = 4 mA; VDS(A) =0V ;V G1-S(A) =0V ; Tamb = 25°C; typical values. f (MHz) s11 s21 s12 s22 Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Table 13: Noise data for amplifier B VDS(B) = 2.8 V; VG2-S = 2.5 V; ID(B) = 4 mA. f (MHz) NF min (dB) Γopt rn (ratio) ratio (deg) 400 0.9 0.8 19 0.9 800 1.0 0.83 46 0.96 Fig 32. Cross-modulation test setup (for one MOSFET) 001aad926 10 kW R L 50 W » 2.2 mH R GEN 50 W VI

50 W R G1

4.7 nF 4.7 nF 4.7 nF 4.7 nF VAGC VGG DUT VDS

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 17 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 10. Package outline Fig 33. Package outline SOT666 UNIT b p cD E e1 H E Lp w REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 01-08-27 04-11-08 IEC JEDEC JEITA mm 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 0.5 e 1.0 1.7 1.5 0.1 y 0.1 DIMENSIONS (mm are the original dimensions) 0.3 0.1 SOT666 bp pin 1 index D e A Lp detail X H E EA S 0 1 2 mm scale A 0.6 0.5 c X 123 456 Plastic surface mounted package; 6 leads SOT666 YS w M A

BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 18 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 11. Revision history Table 14: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BF1206F_1 20060130 product data sheet - BF1206F_1 -

Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 19 of 20 12. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions Short-form specification —The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 14. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Trademarks Notice —All referenced brands, product names, service names and trademarks are the property of their respective owners. 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).

© Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 30 January 2006 BF1206F_1 Published in The Netherlands Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 17. Contents