BF1109 | DigiCamel IC Datasheet

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Product speciﬁcation Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07

1997 Dec 08

BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs

1997 Dec 08 2

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR

FEATURES

Short channel transistor with high forward transfer admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz
Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

APPLICATIONS

VHF and UHF applications with 9 V supply voltage, such as television tuners and professional communications equipment.

DESCRIPTION

Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. PINNING PIN DESCRIPTION 1 source 2 drain 3 gate 2 4 gate 1 Fig.1 Simplified outline (SOT143B). BF1109 marking code: NFp. Top view MSB014 Fig.2 Simplified outline (SOT143R). BF1109R marking code: NBp. handbook, 2 columns Top view MSB035 Fig.3 Simplified outline (SOT343R). BF1109WR marking code: NB. fpage Top view MSB842 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage −− 11 V ID drain current (DC) −− 30 mA Ptot total power dissipation T amb ≤ 80 °C −− 200 mW yfs forward transfer admittance − 30 − mS C ig1-ss input capacitance at gate 1 − 2.2 2.7 pF C rss reverse transfer capacitance f = 1 MHz − 25 40 fF F noise ﬁgure f = 800 MHz − 1.5 2.5 dB Xmod cross-modulation input level for k = 1% at 40 dB AGC 100 −− dBµV Tj operating junction temperature −− 150 °C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

1997 Dec 08 3

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on a printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 11 V ID drain current (DC) − 30 mA IG1 gate 1 current −± 10 mA IG2 gate 2 current −± 10 mA Ptot total power dissipation T amb ≤ 80 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − +150 °C Fig.4 Power derating curve. handbook, halfpage 0 40 80 160 250 200 MGM243 120 150 100 Ptot (mW) Tamb (°C)

1997 Dec 08 4

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR THERMAL CHARACTERISTICS Note 1. Device mounted on a printed-circuit board. STATIC CHARACTERISTICS Tj=2 5°C unless otherwise speciﬁed. DYNAMIC CHARACTERISTICS Common source; Tamb =2 5°C; VG2-S = 4 V; VDS = 9 V; self-biasing current; unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient in free air note 1 350 K/W R th j-s thermal resistance from junction to soldering point 200 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)DSS drain-source breakdown voltage VG1-S =V G2-S = 0; ID =1 0µA1 1 − V V(BR)G1-SS gate 1-source breakdown voltage VG2-S = 0; IG1-S =1 0µA; ID =0 1 1 − V V(BR)G2-SS gate 2-source breakdown voltage VG1-S =V DS = 0; IG2-S =1 0µA1 1 − V VG2-S (th) gate 2-source threshold voltage VG1-S =9V ; VDS =9V ; ID =2 0µA 0.3 1.2 V IDSX self-biasing drain current V G2-S =4V ; VDS = 9 V 8 16 mA IG1-SS gate 1 cut-off current V G1-S =9V ; VG2-S = 0; ID =0 − 20 nA IG2-SS gate 2 cut-off current V G1-S =V DS = 0; VG2-S =9V − 20 nA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT yfs forward transfer admittance pulsed; Tj=2 5°C2 4 3 0 − mS C ig1-ss input capacitance at gate 1 f = 1 MHz − 2.2 2.7 pF C ig2-ss input capacitance at gate 2 f = 1 MHz − 1.5 − pF C oss output capacitance f = 1 MHz − 1.3 − pF C rss reverse transfer capacitance f = 1 MHz − 25 40 fF F noise ﬁgure f = 800 MHz; Y S =Y S opt − 1.5 2.5 dB G p power gain G S = 2 mS; BS =B S opt; GL = 0.5 mS; BL =B L opt; f = 200 MHz; see Fig.16 − 38 − dB G S = 3.3 mS; BS =B S opt; GL = 1 mS; BL =B L opt; f = 800 MHz; see Fig.17 − 20 − dB Xmod cross-modulation input level for k = 1% at 0 dB AGC; fw = 50 MHz; funw = 60 MHz; see Fig.18 85 −− dBµV input level for k = 1% at 40 dB AGC; fw = 50 MHz; funw = 60 MHz; see Fig.18 100 −− dBµV

1997 Dec 08 5

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR Fig.5 Output characteristics; typical values. VG2-S =4V . Tj=2 5°C. handbook, halfpage 01 0 24 6 8 MDA613 ID (mA) VDS (V) VG1 = 1.6 V 1.3 V 1.2 V 1.1 V 1.5 V 1.4 V 1 V Fig.6 Transfer characteristics; typical values. VDS =9V . Tj=2 5°C. handbook, halfpage 0.5 2.5 MDA614 1 1.5 2 VG1 (V) ID (mA) 2 V 1 V VG2-S = 4 V 3.5 V 2.5 V 1.5 V 3 V Fig.7 Forward transfer admittance as a function of drain current; typical values. VDS =9V . Tj=2 5°C. handbook, halfpage 0 1 02 03 0 MDA615 ID (mA) yfs (mS) 3.5 V 3 V

2.5 V2 V

VG2-S = 4 V Fig.8 Drain current as a function of gate 2 voltage; typical values. (1) VDS =9V . (2) VDS =7V . (3) VDS =5V . (4) VDS =3V . handbook, halfpage MDA616 234 ID (mA) VG2-S (V) (1) (4) (3)(2)

1997 Dec 08 6

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR Fig.9 Drain current as a function of drain-source voltage; typical values. VG2-S =4V . Tj=2 5°C. handbook, halfpage 02 1 0 46 8 MDA617 ID (mA) VDS (V) Fig.10 Drain current as a function of gate 1 current; typical values. VDS = 9 V; VG2-S = 4 V; Tj=2 5°C. handbook, halfpage −8 −6 −40 MDA618 ID (mA) IG1 (µA) VDS = 9 V; VG2nom = 4 V; IDnom = 12 mA; fw = 50 MHz; funw = 60 MHz; Tamb =2 5°C. Fig.11 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values (see Fig.18). handbook, halfpage 02 0 Vunw (dBµV) gain reduction (dB) 40 60 120 110 100 MDA619

1997 Dec 08 7

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR Fig.12 Input admittance as a function of frequency; typical values. VDS = 9 V; VG2-S =4V . ID = 12 mA; Tamb =2 5°C. handbook, halfpage MDA620 102 10−2 10 102 103 10−1 f (MHz) yis (mS) gis bis Fig.13 Reverse transfer admittance and phase as a function of frequency; typical values. VDS = 9 V; VG2-S =4V . ID = 12 mA; Tamb =2 5°C. handbook, halfpage MDA621 103 102 10 102 103 f (MHz) |yrs| (mS) ϕrs (deg) −103 −10 −102 ϕrs |yrs| Fig.14 Forward transfer admittance and phase as a function of frequency; typical values. VDS = 9 V; VG2-S =4V . ID = 12 mA; Tamb =2 5°C. handbook, halfpage MDA622 102 ϕfs (deg) −102 −1010 10 10 2 103 f (MHz) |yfs| (mS) ϕfs |yfs| Fig.15 Output admittance as a function of frequency; typical values. VDS = 9 V; VG2-S =4V . ID = 12 mA; Tamb =2 5°C. handbook, halfpage MDA623 10−1 10−2 10 102 103 f (MHz) yos (mS) bos gos

1997 Dec 08 8

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR Fig.16 Gain test circuit. VDS = 9 V, GS = 2 mS, GL = 0.5 mS, f = 200 MHz. L1 = 45 nH, 4 turns, internal diameter = 4 mm, 0.8 mm copper wire. L2 = 160 nH, 3 turns, internal diameter = 8 mm, 0.8 mm copper wire; tapped at approximately half a turn from the cold side, to set G L = 0.5 mS. C1 adjusted for GS = 2 mS. handbook, full pagewidth BF1109 BF1109R BF1109WR MDA624 330 kΩ 47 kΩ pF 5.5 pF 1 nF 1 nF 1 nF 1 nF 1 nF 1 nF VAGC VDS S D 1 nF 330 kΩ 1 nF BB405 10 pF BB405 input 50 Ω Vtun input output 50 Ω Vtun output 2 µH Fig.17 Gain test circuit. VDS = 9 V, GS = 3.3 mS, GL = 1 mS, f = 800 MHz. L1 = 2 cm, silvered 0.8 mm copper wire 4 mm above ground plane. L2 = 2 cm, silvered 0.8 mm copper wire 4 mm above ground plane. L3 = 11 turns 0.5 mm copper wire without spacing, internal diameter = 3 mm, L = approx. 200 nH. handbook, full pagewidth input 50 Ω output 50 ΩBF1109 BF1109R BF1109WR MDA625 47 kΩ 0.5 to 3.5 pF 1 nF 1 nF1 nF 1 nF VAGC VDS S D /,/,/, 2 to 18 pF 4 to 40 pF /,/,/,/, /,/,/,/, 0.5 to 3.5 pF 1 nF

1997 Dec 08 9

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR Fig.18 Cross-modulation test set-up. handbook, full pagewidth BF1109 BF1109R BF1109WR MDA626 R gen 50 Ω 50 Ω R1 = 50 Ω 10 kΩ D S10 nF Vi 10 nF4.7 nF 47 µH 4.7 nF VG2 VDS Table 1 Scattering parameters: VDS = 9 V; VG2-S = 4 V; ID =1 2m A Table 2 Noise data: VDS = 9 V; VG2-S = 4 V; ID =1 2m A f (MHz) S11 S21 S12 S22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) f (MHz) Fmin (dB) Γopt R n (Ω )(ratio) (deg) 800 1.5 0.684 40.94 40.4

1997 Dec 08 10

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR PACKAGE OUTLINES UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 1.1 0.9 A 1 max 0.1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 H E ywvQ 2.5 2.1 0.45 0.15 0.55 0.45 e 1.9 1.7 Lp 0.1 0.10.2 bp 0.48 0.38 DIMENSIONS (mm are the original dimensions) SOT143B 97-02-28 0 1 2 mm scale Plastic surface mounted package; 4 leads SOT143B D H E E AB v M A X A Lp Q detail X c y w M e B bp

1997 Dec 08 11

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 1.1 0.9 A 1 max 0.1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 H E ywvQ 2.5 2.1 0.55 0.25 0.45 0.25 e 1.9 1.7 Lp 0.1 0.10.2 bp 0.48 0.38 DIMENSIONS (mm are the original dimensions) SOT143R 97-03-10 0 1 2 mm scale Plastic surface mounted package; reverse pinning; 4 leads SOT143R D H E E AB v M A X A Lp Q detail X c y w M e B bp

1997 Dec 08 12

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT343R D A Lp Q detail X c H E E v M A AB 0 1 2 mm scale X Plastic surface mounted package; reverse pinning; 4 leads SOT343R w M B 97-05-21 bp UNIT A 1 max bp cD Eb1 H E Lp Qw v mm 0.11.1 0.8 0.4 0.3 0.25 0.10 0.7 0.5 2.2 1.8 1.35 1.15 e 2.2 2.01.3 0.2 y 0.10.21.15 DIMENSIONS (mm are the original dimensions) 0.45 0.15 0.23 0.13 A e y

1997 Dec 08 13

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1997 Dec 08 14

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR NOTES

1997 Dec 08 15

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR NOTES

Internet: http://www.semiconductors.philips.com Philips Semiconductors – a worldwide company © Philips Electronics N.V. 1997 SCA55 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

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Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Printed in The Netherlands 117067/00/02/pp16 Date of release: 1997 Dec 08 Document order number: 9397 750 02954

Product Information

BF1109 specifications and overview.

Summary

N-channel dual-gate MOS-FETs

Description

N-channel dual-gate MOS-FETs

Source title BF1109 Datasheet(PDF) - Quanzhou Jinmei Electronic Co.,Ltd.

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