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BF1101_15 JMNIC | Alldatasheet

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Technical content

Product speciﬁcation Supersedes data of 1999 Feb 01

1999 May 14

BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs

1999 May 14 2

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR

FEATURES

Short channel transistor with high forward transfer admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz
Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

APPLICATIONS

VHF and UHF applications with 3 to 7 V supply voltage, such as television tuners and professional communications equipment.

DESCRIPTION

Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. PINNING PIN DESCRIPTION 1 source 2 drain 3 gate 2 4 gate 1 Fig.1 Simplified outline (SOT143B). BF1101 marking code: NDp. handbook, 2 columns Top view MSB014 Fig.2 Simplified outline (SOT143R). BF1101R marking code: NCp. handbook, 2 columns Top view MSB035 Fig.3 Simplified outline (SOT343R). BF1101WR marking code: NC. fpage Top view MSB842 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage −− 7V ID drain current −− 30 mA Ptot total power dissipation −− 200 mW yfs forward transfer admittance 25 30 − mS C ig1-ss input capacitance at gate 1 − 2.2 2.7 pF C rss reverse transfer capacitance f = 1 MHz − 25 35 fF F noise ﬁgure f = 800 MHz − 1.7 2.5 dB Xmod cross-modulation input level for k = 1% at 40 dB AGC 100 −− dBµV Tj operating junction temperature −− 150 °C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

1999 May 14 3

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature of the soldering point of the source lead. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 7V ID drain current − 30 mA IG1 gate 1 current −± 10 mA IG2 gate 2 current −± 10 mA Ptot total power dissipation T s ≤ 110 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − +150 °C SYMBOL PARAMETER VALUE UNIT R th j-s thermal resistance from junction to soldering point 200 K/W Fig.4 Power derating curve. handbook, halfpage 0 50 100 200 250 200 MGL615 150 150 100 Ptot (mW) Ts (°C)

1999 May 14 4

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR STATIC CHARACTERISTICS Tj=2 5°C unless otherwise speciﬁed. Note 1. R G1 connects G1 to VGG = 5 V; see Fig.21. DYNAMIC CHARACTERISTICS Common source; Tamb =2 5°C; VG2-S = 4 V; VDS = 5 V; ID = 12 mA; unless otherwise specified. Note 1. Measured in test circuit of Fig.21. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)DSS drain-source breakdown voltage VG1-S =V G2-S = 0; ID =1 0µA7 − V V(BR)G1-SS gate 1-source breakdown voltage VG2-S =V DS = 0; IG1-S = 10 mA 7 16 V V(BR)G2-SS gate 2-source breakdown voltage VG1-S =V DS = 0; IG2-S = 10 mA 7 16 V V(F)S-G1 forward source-gate 1 voltage V G2-S =V DS = 0; IS-G1 = 10 mA 0.5 1.5 V V(F)S-G2 forward source-gate 2 voltage V G1-S =V DS = 0; IS-G2 = 10 mA 0.5 1.5 V VG1-S (th) gate 1-source threshold voltage VG2-S =4V ; VDS =5V ; ID = 100µA 0.3 1.0 V VG2-S (th) gate 2-source threshold voltage VG1-S =5V ; VDS =5V ; ID = 100µA 0.3 1.2 V IDSX drain-source current V G2-S =4V ; VDS =5V ; RG1 = 120 kΩ ; note 1 81 6 m A IG1-SS gate 1 cut-off current V G2-S =V DS = 0; VG1-S =5V − 50 nA IG2-SS gate 2 cut-off current V G1-S =V DS = 0; VG2-S =4V − 20 nA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT yfs forward transfer admittance pulsed; Tj=2 5°C 2 53 04 0m S C ig1-ss input capacitance at gate 1 f = 1 MHz − 2.2 2.7 pF C ig2-ss input capacitance at gate 2 f = 1 MHz − 1.6 − pF C oss output capacitance f = 1 MHz − 1.2 − pF C rss reverse transfer capacitance f = 1 MHz − 25 35 fF F noise ﬁgure f = 800 MHz; Y S =Y S opt − 1.7 2.5 dB Xmod cross-modulation input level for k = 1% at 0 dB AGC; fw = 50 MHz; funw = 60 MHz; note 1 85 −− dBµV input level for k = 1% at 40 dB AGC; fw = 50 MHz; funw = 60 MHz; note 1 100 −− dBµV

1999 May 14 5

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR Fig.5 Transfer characteristics; typical values. VDS =5V . Tj=2 5°C. handbook, halfpage 0.4 MGS299 0.8 1.2 1.6 2 ID (mA) VG1-S (V) 3.5 V 3 V 2.5 V 2 V 1 V 1.5 V VG2-S = 4 V Fig.6 Output characteristics; typical values. VG2-S =4V . Tj=2 5°C. handbook, halfpage MGS300 468 ID (mA) VDS (V) 1.5 V 1.4 V 1.3 V 1.2 V 1.1 V 1 V VG1-S = 1.6 V Fig.7 Gate 1 current as a function of gate 1 voltage; typical values. VDS =5V . Tj=2 5°C. handbook, halfpage 100 0.5 MGS301 1 1.5 2 2.5 IG1 (µA) VG1-S (V) 3.5 V 3 V 2.5 V 2 V VG2-S = 4 V Fig.8 Forward transfer admittance as a function of drain current; typical values. VDS =5V . Tj=2 5°C. handbook, halfpage 81 641 2 2 0 MGS302 ID (mA) yfs (mS) 3 V 2.5 V 2 V VG2-S = 4 V 3.5 V

1999 May 14 6

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR Fig.9 Drain current as a function of gate 1 current; typical values. VDS =5V . VG2-S =4V . Tj=2 5°C. handbook, halfpage MGS303 20 30 40 50 ID (mA) IG1 (µA) Fig.10 Drain current as a function of gate 1 supply voltage (= VGG ); typical values. VDS = 5 V; VG2-S = 4 V; Tj=2 5°C. R G1 = 120 kΩ (connected to VGG ); see Fig.21. handbook, halfpage MGS304 23 5 4 ID (mA) VGG (V) Fig.11 Drain current as a function of gate 1 (= VGG ) and drain supply voltage; typical values. VG2-S = 4 V; Tj=2 5°C. R G1 connected to VGG ; see Fig.21. handbook, halfpage 468 ID (mA) VGG = VDS (V) R G1 = 47 kΩ 68 kΩ 82 kΩ 100 kΩ 120 kΩ 150 kΩ 180 kΩ 220 kΩ MGS305 VDS = 5 V; Tj=2 5°C. R G1 = 120 kΩ (connected to VGG ); see Fig.21. Fig.12 Drain current as a function of gate 2 voltage; typical values. handbook, halfpage MGS306 ID (mA) VG2-S (V) 4.5 V 4 V 3.5 V 3 V VGG = 5 V

1999 May 14 7

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR Fig.13 Gate 1 current as a function of gate 2 voltage; typical values. VDS = 5 V; Tj=2 5°C. R G1 = 120 kΩ (connected to VGG ); see Fig.21. handbook, halfpage MGS307 26 4 IG1 (µA) VG2-S (V) 4.5 V 4 V 3.5 V 3 V VGG = 5 V Fig.14 Typical gain reduction as a function of the AGC voltage; see Fig.21. handbook, halfpage −30 −20 −10 −40 −50 MGS308 234 gain reduction (dB) VAGC (V) (2) (1)(3) VDS = 5 V; VGG = 5 V; f = 50 MHz; Tamb =2 5°C. (1) RG1 =6 8kΩ . (2) RG1 = 120 kΩ . (3) RG1 = 180 kΩ . Fig.15 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; see Fig.21. handbook, halfpage 120 100 110 MGS309 20 30 40 50 Vunw (dBµV) gain reduction (dB) (2) (3) (1) VDS = 5 V; VGG = 5 V; f = 50 MHz; funw = 60 MHz; Tamb =2 5°C. (1) RG1 =6 8kΩ . (2) RG1 = 120 kΩ . (3) RG1 = 180 kΩ . Fig.16 Drain current as a function of gain reduction; typical values; see Fig.21. handbook, halfpage MGS310 20 30 40 50 ID (mA) gain reduction (dB) (2) (3) (1) VDS = 5 V; VGG = 5 V; f = 50 MHz; Tamb =2 5°C. (1) RG1 =6 8kΩ . (2) RG1 = 120 kΩ . (3) RG1 = 180 kΩ .

1999 May 14 8

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR Fig.17 Input admittance as a function of frequency; typical values. VDS = 5 V; VG2 =4V . ID = 12 mA; Tamb =2 5°C. handbook, halfpage MGS311 102 10−1 10 10 2 103 f (MHz) yis (mS) bis gis Fig.18 Reverse transfer admittance and phase as a function of frequency; typical values. VDS = 5 V; VG2 =4V . ID = 12 mA; Tamb =2 5°C. handbook, halfpage MGS312 102 ϕ rs (deg) −102 −1010 10 10 2 103 f (MHz) |yrs| (mS) |yrs| ϕ rs Fig.19 Forward transfer admittance and phase as a function of frequency; typical values. VDS = 5 V; VG2 =4V . ID = 12 mA; Tamb =2 5°C. handbook, halfpage MGS313 102 ϕ fs (deg) −102 −1010 10 10 2 103 f (MHz) |yfs| (mS) ϕ fs |yfs| Fig.20 Output admittance as a function of frequency; typical values. VDS = 5 V; VG2 =4V . ID = 12 mA; Tamb =2 5°C. handbook, halfpage MGS314 10−1 10 10 2 103 f (MHz) yos (mS) bos gos

1999 May 14 9

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR Table 1 Scattering parameters: VDS = 5 V; VG2-S = 4 V; ID = 12 mA; Tamb =2 5°C Table 2 Noise data: VDS = 5 V; VG2-S = 4 V; ID = 12 mA; Tamb =2 5°C f (MHz) S11 S21 S12 S22 MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) MAGNITUDE (ratio) ANGLE (deg) f (MHz) Fmin (dB) Γopt R n (Ω )(ratio) (deg) 800 1.5 0.715 58.3 37.85 Fig.21 Cross-modulation test set-up. handbook, full pagewidth DUT 4.7 nF 10 kΩ MGS315 4.7 nF ≈ 2.2 µH 4.7 nF R L 50 Ω VGG VAGC VDS R GEN 50 Ω VI 50 Ω 4.7 nF R G1

1999 May 14 10

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR PACKAGE OUTLINES UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 1.1 0.9 A 1 max 0.1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 H E ywvQ 2.5 2.1 0.45 0.15 0.55 0.45 e 1.9 1.7 Lp 0.1 0.10.2 bp 0.48 0.38 DIMENSIONS (mm are the original dimensions) SOT143B 97-02-28 0 1 2 mm scale Plastic surface mounted package; 4 leads SOT143B D H E E AB v M A X A Lp Q detail X c y w M e B bp

1999 May 14 11

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 1.1 0.9 A 1 max 0.1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 H E ywvQ 2.5 2.1 0.55 0.25 0.45 0.25 e 1.9 1.7 Lp 0.1 0.10.2 bp 0.48 0.38 DIMENSIONS (mm are the original dimensions) SOT143R 97-03-10 0 1 2 mm scale Plastic surface mounted package; reverse pinning; 4 leads SOT143R D H E E AB v M A X A Lp Q detail X c y w M e B bp

1999 May 14 12

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT343R D A Lp Q detail X c H E E v M A AB 0 1 2 mm scale X Plastic surface mounted package; reverse pinning; 4 leads SOT343R w M B 97-05-21 bp UNIT A 1 max bp cD Eb1 H E Lp Qw v mm 0.11.1 0.8 0.4 0.3 0.25 0.10 0.7 0.5 2.2 1.8 1.35 1.15 e 2.2 2.01.3 0.2 y 0.10.21.15 DIMENSIONS (mm are the original dimensions) 0.45 0.15 0.23 0.13 A e y

1999 May 14 13

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later. Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1999 May 14 14

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR NOTES

1999 May 14 15

Philips Semiconductors Product speciﬁcation N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR NOTES

© Philips Electronics N.V. SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Internet: http://www.semiconductors.philips.com 1999 64 Philips Semiconductors – a worldwide company Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

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Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 02 67 52 2531, Fax. +39 02 67 52 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Printed in The Netherlands 125004/00/02/pp16 Date of release: 1999 May 14 Document order number: 9397 750 05993

Product Information

BF1101 specifications and overview.

Summary

N-channel dual-gate MOS-FETs

Description

N-channel dual-gate MOS-FETs

Source title BF1101_15 Datasheet(PDF) - Quanzhou Jinmei Electronic Co.,Ltd.

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