BD910 JMNIC | Alldatasheet

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Technical content

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD910 BD912 DESCRIPTION ·

  • With TO-220C package
  • Complement to type BD909 BD911

APPLICATIONS

  • Intented for use in power linear and switching applications PINNING PIN DESCRIPTION

1 Emitter

2 Collector;connected to

3 Base

Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT BD910 -80 VCBO Collector-base voltage BD912 Open emitter -100 V BD910 -80 VCEO Collector-emitter voltage BD912 Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IB Base current -5 A PC Collector power dissipation TC≤25℃ 90 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.4 ℃/W f

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD910 BD912 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD910 -80 VCEO(SUS) Collector-emitter sustaining voltage BD912 IC=-0.1A; IB=0 -100 V VCEsat-1 Collector-emitter saturation voltage I C=-5 A;IB=-0.5 A -1.0 V VCEsat-2 Collector-emitter saturation voltage I C=-10A;IB=-2.5 A -3.0 V VBEsat Base-emitter saturation voltage I C=-10A;IB=-2.5 A -2.5 V VBE Base-emitter voltage I C=-5A ; VCE=-4V -1.5 V BD910 VCB=-80V; IE=0 TC=25℃ -0.5 -5.0 ICBO Collector cut-off current BD912 VCB=-100V; IE=0 TC=25℃ -0.5 -5.0 mA BD910 V CE=-40V; IB=0 ICEO Collector cut-off current BD912 V CE=-50V; IB=0 -1.0 mA IEBO Emitter cut-off current V EB=-5V; IC=0 -1.0 mA hFE-1 DC current gain I C=-0.5A ; VCE=-4V 40 250 hFE-2 DC current gain I C=-5A ; VCE=-4V 15 150 hFE-3 DC current gain I C=-10A ; VCE=-4V 5 fT Transition frequency I C=-0.5A ; VCE=-4V 3 MHz

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD910 BD912 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD910 BD912

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD910 BD912