BD810 JMNIC | Alldatasheet
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Power Transistors www.jmnic.com BD810 Silicon PNP Transistors Features B C E ﹒Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ﹒With TO-220 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 80 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 5.0 V IB Base collector current 6.0 A IC Collector current 10 A PC Collector power dissipation 90 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TO-220 Electrical Characteristics Tc=25 SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT ICBO Collector-base cut-off current VCB=80V; IE=0 1.0 mA IEBO Emitter-base cut-off current VEB=5.0V; IC=0 2.0 mA ICEO Collector-emitter cut-off current VCBO Collector-base breakdown voltage V(BR)ceo Collector-emitter breakdown voltage IC=0.1A; IB=0 80 V VEBO Emitter-base breakdown voltage VCE(sat-1) Collector-emitter saturation voltages IC=3A; IB=0.3A 1.1 V VCE(sat-2) Collector-emitter saturation voltages hFE-1 Forward current transfer ratio IC=2A; VCE=2V 30 hFE-2 Forward current transfer ratio IC=4A; VCE=2V 15 hFE-3 Forward current transfer ratio VBE(on)1 Base-emitter on voltages IC=4A; VCE=2V 1.6 V VBE(on)2 Base-emitter on voltages fT Transition frepuency VCE=10V ;IC=1A;f=1MHz 1.5 MHz Cob Output Capacitance