BD743_15 JMNIC | Alldatasheet
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Technical content
Product Specification www.jmnic.com Silicon NPN Power Transistors BD743/A/B/C DESCRIPTION ·
- With TO-220C package
- Complement to type BD744/A/B/C
- High current capability
- High power dissipation
APPLICATIONS
- For use in power linear and switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT BD743 50 BD743A 70 BD743B 90 VCBO Collector-base voltage BD743C Open emitter 110 V BD743 45 BD743A 60 BD743B 80 VCEO Collector-emitter voltage BD743C Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A ICM Collector current-peak 20 A IB Base current 5 A TC=25℃ 90 PC Collector power dissipation Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ JMnic
Product Specification www.jmnic.com JM nic Silicon NPN Power Transistors BD743/A/B/C CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD743 45 BD743A 60 BD743B 80 V(BR)CEO Collector-emitter breakdown voltage BD743C IC=30mA; IB=0 100 V VCEsat-1 Collector-emitter saturation voltage I C=5 A;IB=0.5 A 1.0 V VCEsat-2 Collector-emitter saturation voltage I C=15 A;IB=5 A 3.0 V VBE -1 Base-emitter on voltage I C=5A ; VCE=4V 1.0 V VBE -2 Base-emitter on voltage I C=15A ; VCE=4V 3.0 V BD743/A V CE=30V; IB=0 ICEO Collector cut-off current BD743B/C V CE=60V; IB=0 0.1 mA BD743 VCE=50V; VBE=0 TC=125℃ 0.1 5.0 BD743A VCE=70V; VBE=0 TC=125℃ 0.1 5.0 BD743B VCE=90V; VBE=0 TC=125℃ 0.1 5.0 ICBO Collector cut-off current BD743C VCE=110V; VBE=0 TC=125℃ 0.1 5.0 mA IEBO Emitter cut-off current V EB=5V; IC=0 0.5 mA hFE-1 DC current gain I C=1A ; VCE=4V 40 hFE-2 DC current gain I C=5A ; VCE=4V 20 150 hFE-3 DC current gain I C=15A ; VCE=4V 5 Switching times resistive load td Delay time 0.02 μs tr Rise time 0.35 μs ts Storage time 0.5 μs tf Fall time IC=5 A;IB1=-IB2=0.5 A VBE(off)=-4.2V; RL=6Ω tp=20μs 0.4 μs THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.40 ℃/W
Product Specification www.jmnic.com JM nic Silicon NPN Power Transistors BD743/A/B/C PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)