BAP55L_15 JMNIC | Alldatasheet
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Technical content
- Product profile
1.1 General description
Planar PIN diode in a SOD882 leadless ultra small plastic SMD package.
1.2 Features
1.3 Applications
- Pinning information [1] The marking bar indicates the cathode. 3. Ordering information BAP55L Silicon PIN diode Rev. 01 — 5 April 2005 Preliminary data sheet ■ High speed switching for RF signals■ Very low series inductance ■ Low diode capacitance ■ For applications up to 3 GHz ■ Low forward resistance ■ RF attenuators and switches Table 1: Discrete pinning Pin Description Simplified outline Symbol 1 cathode [1] 2 anode 21 Transparent top view sym006 Table 2: Ordering information Type number Package Name Description Version BAP55L - leadless ultra small plastic package; 2 terminals; body 1.0× 0.6× 0.5 mm SOD882
9397 750 14811 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Preliminary data sheet Rev. 01 — 5 April 2005 2 of 8 Philips Semiconductors BAP55L Silicon PIN diode 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics Table 3: Marking Type number Marking code BAP55L E6 Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage - 50 V IF forward current - 100 mA Ptot total power dissipation T s = 90°C - 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C Table 5: Thermal characteristics Symbol Parameter Conditions Typ Unit R th(j-sp) thermal resistance from junction to soldering point
100 K/W
Table 6: Characteristics Tj = 25°C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage I F = 50 mA - 0.95 1.1 V IR reverse current V R =2 0V - - 1 0 n A VR =5 0V - - 0 . 1 µA C d diode capacitance f = 1 MHz;Figure2 VR = 0 V - 0.27 - pF VR = 1 V - 0.23 - pF VR = 20 V - 0.18 0.28 pF rD diode forward resistance f = 100 MHz;Figure1 IF = 0.5 mA - 3.4 4.5 Ω IF = 1 mA - 2.3 3.3 Ω IF = 10 mA - 0.8 1.2 Ω IF = 100 mA - 0.4 0.7 Ω
9397 750 14811 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Preliminary data sheet Rev. 01 — 5 April 2005 3 of 8 Philips Semiconductors BAP55L Silicon PIN diode |s12|2 isolation V R =0V ;Figure4 f = 900 MHz - 17.6 - dB f = 1800 MHz - 13 - dB f = 2450 MHz - 11.1 - dB 21|2 insertion loss I F = 0.5 mA;Figure3 f = 900 MHz - 0.25 - dB f = 1800 MHz - 0.27 - dB f = 2450 MHz - 0.29 - dB I F = 1 mA;Figure3 f = 900 MHz - 0.17 - dB f = 1800 MHz - 0.19 - dB f = 2450 MHz - 0.21 - dB I F =1 0m A ;Figure3 f = 900 MHz - 0.07 - dB f = 1800 MHz - 0.09 - dB f = 2450 MHz - 0.12 - dB I F = 100 mA;Figure3 f = 900 MHz - 0.05 - dB f = 1800 MHz - 0.07 - dB f = 2450 MHz - 0.09 - dB τ L charge carrier life time when switched from IF = 10 mA to IR = 6 mA; R L = 100Ω ; measured at IR =3m A - 0.28 - µs LS series inductance - 0.6 - nH Table 6: Characteristics …continued Tj = 25°C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit
9397 750 14811 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Preliminary data sheet Rev. 01 — 5 April 2005 4 of 8 Philips Semiconductors BAP55L Silicon PIN diode f = 100 MHz; Tj=2 5°C. f = 1 MHz; T j=2 5°C. Fig 1. Forward resistance as a function of forward current; typical values Fig 2. Diode capacitance as a function of reverse voltage; typical values (1) IF = 100 mA. (2) IF =1 0m A . (3) IF = 1 mA. (4) IF = 0.5 mA. Diode inserted in series with a 50Ω stripline circuit and biased via the analyzer Tee network. Tamb =2 5°C. Diode zero biased and inserted in series with a 50Ω stripline circuit. Tamb =2 5°C. Fig 3. Insertion loss (|s21|2) of the diode as a function of frequency; typical values Fig 4. Isolation (|s12|2) of the diode as a function of frequency; typical values IF (mA) 10-1 102101 001aac628 102 rD (W ) 10-1 VR (V) 02 0 1551 0 001aac629 200 100 300 400 C d (fF) 001aac630 f (MHz) 03 21 -0.50 -0.75 -0.25 |S21|2 (dB) -1.00 (1) (2) (3) (4) 001aac631 f (MHz) 03 21 -20 -30 -10 |S12|2 (dB) -40
9397 750 14811 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Preliminary data sheet Rev. 01 — 5 April 2005 5 of 8 Philips Semiconductors BAP55L Silicon PIN diode 8. Package outline Fig 5. Package outline SOD882 UNIT A 1 max.A (1) be 1 L REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA mm 0.50 0.46 0.55 0.470.03 0.62 0.55 0.65 DIMENSIONS (mm are the original dimensions) Notes 1. Including plating thickness 2. The marking bar indicates the cathode 0.30 0.22 SOD882 03-04-16 03-04-17 DE 1.02 0.95 L E (2) 21 b A D L Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm SOD882 0 0.5 1 mm scale
Philips Semiconductors BAP55L Silicon PIN diode 9397 750 14811 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Preliminary data sheet Rev. 01 — 5 April 2005 6 of 8 9. Revision history Table 7: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BAP55L_1 20050405 Preliminary data sheet - 9397 750 14811 -
Philips Semiconductors BAP55L Silicon PIN diode 9397 750 14811 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Preliminary data sheet Rev. 01 — 5 April 2005 7 of 8 10. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions Short-form specification —The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 5 April 2005 Document number: 9397 750 14811 Published in The Netherlands Philips Semiconductors BAP55L Silicon PIN diode 14. Contents