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p.1 EMBA5N10A G D S N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 150mΩ ID 10A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate‐Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 7 Pulsed Drain Current1 IDM 40 Avalanche Current IAS 12 Avalanche Energy L = 0.1mH, ID=12A, RG=25Ω EAS 7.2 mJ Repetitive Avalanche Energy2 L = 0.05mH EAR 3.6 Power Dissipation TC = 25 °C PD W TC = 100 °C 12 Operating Junction & Storage Temperature Range Tj, Tstg ‐ 55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNIT Junction‐to‐Case RJC 4.2 °C / W Junction‐to‐Ambient RJA 62.5 1Pulse width limited by maximum junction temperature. 2Duty cycle 1％
p.2 EMBA5N10A ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.0 2.0 3.0 Gate‐Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V 1 A VDS = 70V, VGS = 0V, TJ = 125 °C 25 On‐State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 10 A Drain‐Source On‐State Resistance1 RDS(ON) VGS = 10V, ID = 10A 130 150 mΩ VGS = 5V, ID = 10A 150 175 Forward Transconductance1 gfs VDS = 5V, ID = 10A 8 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz 1030 pFOutput Capacitance Coss 50 Reverse Transfer Capacitance Crss 42 Gate Resistance Rg VGS = 15mV, VDS = 0V, f = 1MHz 1.2 Ω Total Gate Charge1,2 Qg VDS = 80V, VGS = 10V, ID = 10A nCGate‐Source Charge1,2 Qgs 2.3 Gate‐Drain Charge1,2 Qgd 6.1 Turn‐On Delay Time1,2 td(on) 12 nSRise Time1,2 tr VDS = 50V, 20 Turn‐Off Delay Time1,2 td(off) ID = 1A, VGS = 10V, RGS = 6Ω 25 Fall Time1,2 tf 25 SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS 10 A Pulsed Current3 ISM 40 Forward Voltage1 VSD IF = IS, VGS = 0V 1.3 V Reverse Recovery Time trr IF = 10A, dlF/dt = 100A / S 35 nS Reverse Recovery Charge Qrr 65 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature.
p.3 EMBA5N10A BA5 N10 ABCDEFG 3Pulse width limited by maximum junction temperature. Ordering & Marking Information: Device Name: EMBA5N10A for DPAK (TO‐252) ABCDEFG: Date Code BA5N10: Device Name
p.4 EMBA5N10A V ‐ Drain‐Source Voltage( V ) I ‐ Drain Current( A ) D DS 4 8 8.0V V = 10V 7.0V GS 5.0V 12 16 20 On‐Region Characteristics 6.0V R ‐Normalized Drain‐Source On‐Resistance DS(ON) On‐Resistance Variation with Drain Current and Gate Voltage 6.0 V 1.6 0.8 1.2 1.0 1.4 81 6 2.2 1.8 2.0 2.4 24 32 7.0 V 8.0 V 10 V I ‐ Drain Current( A )D GSV = 5.0 V On‐Resistance Variation with Temperature R ‐ Normalized Drain‐Source On‐Resistance DS(on) T ‐ Junction Temperature (°C) 0.4 ‐50 0.7 1.0 J ‐25 25 DI = 10A V = 10V 1.3 1.6 1.9 GS 12550 75 100 150 On‐Resistance Variation with Gate‐Source Voltage T = 125°C V ‐ Gate‐Source Voltage( V ) 0.05 DS(ON) 0.10 0.20 0.15 GS 4 6 T = 25°CA A 0.40 0.30 0.25 0.35 0.45 81 0 I = 5 AD R ‐ On‐Resistance( Ω ) T = ‐55°C V ‐ Gate‐Source Voltage( V ) I ‐ Drain Current( A ) D GS V = 10V DS A 54 6 25°C 125°C Transfer Characteristics Body Diode Forward Voltage Variation with Source Current and Temperature 25°C T = 125°C V ‐ Body Diode Forward Voltage( V ) Is ‐ Reverse Drain Current( A ) 0.001 0.01 0.1 0.4 SD 0.2 0.6 V = 0V 100 A GS 1.00.8 1.2 ‐55°C 1.4 TYPICAL CHARACTERISTICS
p.5 EMBA5N10A Q ‐ Gate Charge( nC ) V ‐ Gate Source Voltage( V )GS g 8 16 I = 10A D 24 32 80VV = 50VDS Gate Charge Characteristics Single Pulse Time( sec ) Single Pulse Maximum Power Dissipation Power( W ) 0.010 1000 500 0.1 1 2500 1500 2000 3000 10 100 1000 R = 4.2 C/W Single Pulse C °T = 25 C θJC ° V ‐ Drain ‐Source Voltage( V ) Capacitance( pF ) 600 300 DS Crss Coss 900 1500 Ciss 40 60 80 GS f = 1MHz V = 0 V Capacitance Characteristics 100 150 450 750 1350 1200 1050 DC V ‐ Dr ai n ‐Source Vol t age( V ) I ‐ Drain Current( A ) V = 10V Si ngle Pul se R = 4. 2°C/W T = 25°C D DS JC C GS R Limit DS(ON) 10 1001 0. 01 0. 1 100 100m S 10mS 1mS 100uS Ma x i mu m Safe Oper at i ng Ar ea 1000 10uS single pulse D=0.5 0.2 0.1 0.05 0.02 0.01 PDM ※Note : 1. RθJC(t)=4.2°C/W Max. 2. Duty Cycle, D=t1/ t2 3. TJM ‐ TC=PDM*RθJC(t) Transient Thermal Response Curve r(t),Normalized Effective Transient Thermal Resistance t1,Time( sec ) 1010 ‐1‐2 1010 ‐3‐4 1010
p.6 EMBA5N10A H L B C A P D3 D E 2.32.3 7.00 2.00 1.502.50 7.00 Outline Drawing Dimension in mm Dimension A A1 B B1 B2 C D D2 D3 E E2 H L L1 L2 L3 P Footprint