EMB20N03V EXCELLIANCE | Alldatasheet
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ʹͲͳ͵/ͺ/ͳ p.ͳ EMB20N03V G D S N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 20mΩ ID 12A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate‐Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 9 Pulsed Drain Current1 IDM 48 Avalanche Current IAS 8 Avalanche Energy L = 0.1mH, ID=8A, RG=25Ω EAS 3.2 mJ Repetitive Avalanche Energy2 L = 0.05mH EAR 1.6 Power Dissipation TC = 25 °C PD W TC = 100 °C 8.3 Power Dissipation TA = 25 °C PD 2.5 W TA = 100 °C 1 Operating Junction & Storage Temperature Range Tj, Tstg ‐ 55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNIT Junction‐to‐Case RJC 6 °C / W Junction‐to‐Ambient3 RJA 50 1Pulse width limited by maximum junction temperature. 2Duty cycle 1％ 350°C / W when mounted on a 1 in2 pad of 2 oz copper.
ʹͲͳ͵/ͺ/ͳ p.ʹ EMB20N03V ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1 1.5 3 Gate‐Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 A VDS = 20V, VGS = 0V, TJ = 125 °C 25 On‐State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 12 A Drain‐Source On‐State Resistance1 RDS(ON) VGS = 10V, ID = 8A 15.5 20 mΩ VGS = 4.5V, ID = 6A 25 30 Forward Transconductance1 gfs VDS = 5V, ID = 8A 16 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 520 pFOutput Capacitance Coss 88 Reverse Transfer Capacitance Crss 62 Gate Resistance Rg VGS = 15mV, VDS = 0V, f = 1MHz 2.0 Ω Total Gate Charge1,2 Qg(VGS=10V) VDS = 15V, VGS = 10V, ID = 8A 11.5 nCQg(VGS=4.5V) 5 Gate‐Source Charge1,2 Qgs 1.6 Gate‐Drain Charge1,2 Qgd 2.8 Turn‐On Delay Time1,2 td(on) 9 nSRise Time1,2 tr VDS = 15V, 12 Turn‐Off Delay Time1,2 td(off) ID = 1A, VGS = 10V, RGS = 6Ω 30 Fall Time1,2 tf 15 SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS 2.3 A Pulsed Current3 ISM 9.2 Forward Voltage1 VSD IF = IS, VGS = 0V 1.2 V Reverse Recovery Time trr 45 nS Peak Reverse Recovery Current IRM(REC) IF = IS, dlF/dt = 100A / S 30 A Reverse Recovery Charge Qrr 2 nC
ʹͲͳ͵/ͺ/ͳ p.͵ EMB20N03V E b ı.IJı A c Θ IJ D e L0.62.050.5 3.75 0.6 2.6 0.65 0.4 B20 N03 ABCDEFG 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. Ordering & Marking Information: Device Name: EMB20N03V for EDFN 3 x 3 Outline Drawing Dimension in mm Dimension A A1 b c D D1 E E1 E2 E3 e L L1 Ѳ 1 Recommended minimum pads B20N03: Device Name ABCDEFG: Date Code
ʹͲͳ͵/ͺ/ͳ p.Ͷ EMB20N03V V ‐ Drain Source Voltage(V) I ‐ Drain Current(A) D DS 1 2 7V 5V 3 45 4.5V On‐Region Characteristics V = 10VGS I ‐ Drain Current(A) R ‐Normalized Drain‐Source On‐Resistance1.6 0.8 DS(ON) 1.2 1.0 1.4 D GSV = 4.5 V 2.2 1.8 2.0 2.4 18 24 7.0 V 6.0 V 5.0 V 10 V On‐Resistance Variation with Drain Current and Gate Voltage On‐Resistance Variation with Gate‐Source Voltage T = 125°C V ‐ Gate‐Source Voltage( V ) 0.01 DS(ON) 0.02 0.04 0.03 GS 4 6 T = 25°CA A 0.08 0.06 0.05 0.07 0.09 81 0 I = 6 AD R ‐ On‐Resistance( Ω ) T = ‐55° C V ‐ Gate‐Source Voltage( V ) I ‐ Drain Current(A) D 2.01.5 GS V = 10V DS A 3.02.5 3.5 25° C 125° C Transfer Characteristics Body Diode Forward Voltage Variation with Source Current and Temperature 25° C T = 125° C V ‐ Body Diode Forward Voltage( V ) Is ‐ Reverse Drain Current( A ) 0.001 0.01 0.1 0.4 SD 0.2 0.6 V = 0V 100 A GS 1.00.8 1.2 ‐55° C 1.4 On‐Resistance Variation with Temperature R ‐ Normalized Drain‐Source On‐Resistance DS(on) T ‐ Junction Temperature (°C) 0.4 ‐50 0.7 1.0 J ‐25 25 DI = 8A V = 10V 1.3 1.6 1.9 GS 12550 75 100 150
ʹͲͳ͵/ͺ/ͳ p.ͷ EMB20N03V P( pk ),Peak Transient Power( W ) Single Pulse R = 50°C/W T = 25°CA θJA 0.001 0.01 0.1 100101 1000 Single Pulse Maximum Power Dissipation t ,Time (sec) Transient Thermal Response Curve r( t ),Normalized Effective Transient Thermal Resistance 0.001 0.01 0.02 Single Pulse 0.01 Duty Cycle = 0.5 0.1 0.1 0.05 0.2 P θJA4.R (t)=r(t) + R 3.T ‐ T = P * R (t) θJA2.R = 50°C/W 1.Duty Cycle,D = DM 1 10 J 1000100 θJA θJAA Notes: DC V ‐ Drain‐Source Voltage( V ) Maximum Safe Operating Area I ‐ Drain Current( A ) V = 10V Single Pulse R = 50°C/W T = 25°C 0.1 0.01 D 0.1 DS JA A GS R Limit 100 DS(ON) 10s 10 100 100μs 10ms 100ms 1ms V ‐ Drain‐Source Voltage( V ) Capacitance( pF ) 400 200 DS Crss Coss 600 1000 Ciss 10 15 20 GS f = 1MHz V = 0 V Capacitance Characteristics 25 30 100 300 500 900 800 700 Q ‐ Gate Charge( nC ) V ‐ Gate‐Source Voltage( V )GS g 4 8 I = 8A D 12 16 10V 15VV = 5VDS Gate Charge Characteristics