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p.1 EMA09N03AN G D S N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 25V RDSON (MAX.) 9mΩ ID 50A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate‐Source Voltage VGS ±20 V Continuous Drain Current TC = 25 °C ID A TC = 100 °C 35 Pulsed Drain Current1 IDM 140 Avalanche Current IAS 37.5 Avalanche Energy L = 0.1mH, ID=37.5A, RG=25Ω EAS 70 mJ Repetitive Avalanche Energy2 L = 0.05mH EAR 15 Power Dissipation TC = 25 °C PD W TC = 100 °C 20 Operating Junction & Storage Temperature Range Tj, Tstg ‐ 55 to 150 °C 100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=25A, Rated VDS=25V N‐CH THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNIT Junction‐to‐Case RJC 2.5 °C / W Junction‐to‐Ambient RJA 75 1Pulse width limited by maximum junction temperature. 2Duty cycle 1％
p.2 EMA09N03AN ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 25 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1 1.7 3 Gate‐Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V 1 A VDS = 20V, VGS = 0V, TJ = 125 °C 25 On‐State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 50 A Drain‐Source On‐State Resistance1 RDS(ON) VGS = 10V, ID = 25A 7.5 9 mΩ VGS = 5V, ID = 20A 12 15 Forward Transconductance1 gfs VDS = 5V, ID = 20A 20 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz 830 pFOutput Capacitance Coss 270 Reverse Transfer Capacitance Crss 131 Gate Resistance Rg VGS = 15mV, VDS = 0V, f = 1MHz 1.7 Ω Total Gate Charge1,2 Qg(VGS=10V) VDS = 15V, VGS = 10V, ID = 25A nCQg(VGS=5V) 11.5 Gate‐Source Charge1,2 Qgs 2.9 Gate‐Drain Charge1,2 Qgd 6.9 Turn‐On Delay Time1,2 td(on) 10 nSRise Time1,2 tr VDS = 15V, 8 Turn‐Off Delay Time1,2 td(off) ID = 25A, VGS = 10V, RGS = 2.7Ω 25 Fall Time1,2 tf 10 SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS 50 A Pulsed Current3 ISM 140 Forward Voltage1 VSD IF = IS, VGS = 0V 1.3 V Reverse Recovery Time trr 22 nS Peak Reverse Recovery Current IRM(REC) IF = IS, dlF/dt = 100A / S 180 A Reverse Recovery Charge Qrr 12 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％.
p.3 EMA09N03AN A09 N03N ABCDEFG 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. Ordering & Marking Information: Device Name: EMA09N03AN for DPAK (TO‐252) ABCDEFG: Date Code A09N03N: Device Name
p.4 EMA09N03AN V ,GATE TO SOURCE VOLTAGE I ,DRAIN CURRENT( A ) D GS DSV = 10V 34 5 TRANSFER CHARACTERISTICS 125 °C 25 °C T = ‐55 °CA BODY DIODE FORWARD VOLTAGE VARIATION WITH SOURCE CURRENT AND TEMPERATURE V ,BODY DIODE FORWARD VOLTAGE( V ) 0.8 I ,REVERSE DRAIN CURRENT( A ) 0.0001 S 0.001 0.01 0.2 SD 0.4 0.6 V = 0V 0.1 GS A 1.41.0 1.2 25°C ‐55°C T = 125°C ON‐ RESISTANCE VARIATION WITH TEMPERATURE R ,NORMALIZED DRAIN ‐ SOURCE ON ‐ RESISTANCE 0.6 ‐50 DS(ON) 0.8 1.0 j ‐25 0 25 I = 25A V = 10V 1.4 1.2 1.6 1.8 GS D 15010075 125 T ,JUNCTION TEMPERATURE(°C ) ON‐RESISTANCE VARIATION WITH GATE‐SOURCE VOLTAGE V ,GATE‐SOURCE VOLTAGE (V ) R ,ON‐RESISTANCE(OHM) DS(ON) 0.010 0.015 GS I = 25AD 0.020 0.025 0.030 T = 125 C T = 25 CA A I ,DRAIN CURRENT( A ) ON‐ RESISTANCE VARIATION WITH DRAIN CURRENT AND GATE VOLTAGE R ,NORMALIZED DRAIN ‐ SOURCE ON ‐ RESISTANCE 0.5 DS(ON) 1.5 D GSV = 5V 2.5 60 80 100 10V V ,DRAIN‐ SOURCE VOLTAGE ( V ) ON‐REGION CHARACTERISTIC I ,DRAIN ‐ SOURCE CURRENT( A ) 0.5 D 1.5 DS 100 2.5 3 3.5 4 4.5 5 6VV = 10VGS TYPICAL CHARACTERISTICS
p.5 EMA09N03AN MAXIMUM SAFE OPERATING AREA I ,DRAIN CURRENT( A ) JC Tc = 25 C R = 2.5 C/WSINGLE PULSE GSV = 10V 0.5 0.5 D θ DS R Limit 100 300 200 ds(on) DC 10 100 100 s 10 s 100ms 10ms 1ms μ μ V ,DRAIN‐ SOURCE VOLTAGE( V ) SINGLE PULSE TIME ( mSEC ) SINGLE PULSE MAXIMUM POWER DISSIPATION POWER( W ) 0.010 1000 500 0.1 1 2500 1500 2000 3000 10 100 1000 R = 2.5 C/W SINGLE PULSE C °T = 25 C θJC ° 0.5 0.3 0.2 0.05 0.03 0.02 Notes: C θJC θJC 100 1000 J 101 DM 1.Duty Cycle,D = 2.R =2.5°C/W θJC 3.T ‐ T = P * R (t) 4.R (t)=r(t) * RθJC 0.2 0.05 0.1 0.1 Duty Cycle = 0.5 0.01 Single Pulse 0.02 0.01 r(t),Normalized Effective Transient Thermal Resistance Transient Thermal Response Curve t ,Time ( mSEC ) CAPACI TANCE CHARACTERI STI CS V GS =0 V V DS ‐ DRAI N ‐SO U RCE VLTAGE ( V ) C‐CAPACITANCE ( pF ) 0 5 10 15 20 25 30 10 2 10 3 10 4 Cr ss Coss Ci ss f = 1 MH z 06 1 2 18 Q g , GATE CHARGE( nC ) VGS ,GATE-SOURCE VOLTAGE( V ) I D =25A V DS =5V 10V 15V GATE CHARGE CHARACTERI STI CS
p.6 EMA09N03AN 2.32.3 7.00 2.00 1.502.50 7.00 H L B C A P D3 D E Outline Drawing Dimension A A1 B B1 B2 C D D2 D3 E E2 H L L1 L2 L3 P Footprint