DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
p.1 EMB20P03A G S D P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐ 30V RDSON (MAX.) 20mΩ ID ‐ 35A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate‐Source Voltage VGS ±25 V Continuous Drain Current TC = 25 °C ID ‐35 A TC = 100 °C ‐ 26 Pulsed Drain Current1 IDM ‐ 70 Avalanche Current IAS ‐ 10 Avalanche Energy L = 0.1mH, ID=‐10A, RG=25Ω EAS 5 mJ Repetitive Avalanche Energy2 L = 0.05mH EAR 2.5 Power Dissipation TA = 25 °C PD W TA = 100 °C 16 Operating Junction & Storage Temperature Range Tj, Tstg ‐ 55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNIT Junction‐to‐Case RJC 3 °C / W Junction‐to‐Ambient3 RJA 62.5 1Pulse width limited by maximum junction temperature. 2Duty cycle 1％
p.2 EMB20P03A ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = ‐250A ‐30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = ‐250A ‐1 ‐ 1.5 ‐3 Gate‐Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA VDS = 0V, VGS = ±25V ±500 Zero Gate Voltage Drain Current IDSS VDS = ‐24V, VGS = 0V ‐ 1 A VDS = ‐20V, VGS = 0V, TJ = 125 °C ‐ 10 On‐State Drain Current1 ID(ON) VDS = ‐5V, VGS = ‐10V ‐ 35 A Drain‐Source On‐State Resistance1 RDS(ON) VGS = ‐10V, ID = ‐20A 17 20 mΩ VGS = ‐4.5V, ID = ‐10A 25 34 Forward Transconductance1 gfs VDS = ‐5V, ID = ‐20A 24 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = ‐15V, f = 1MHz 1407 pFOutput Capacitance Coss 208 Reverse Transfer Capacitance Crss 164 Gate Resistance Rg VGS = 15mV, VDS = 0V, f = 1MHz 4.5 Ω Total Gate Charge1,2 Qg(VGS=10V) VDS = ‐15V, VGS = ‐10V, ID = ‐20A 20.3 nCQg(VGS=4.5V) 9.8 Gate‐Source Charge1,2 Qgs 3.2 Gate‐Drain Charge1,2 Qgd 4.9 Turn‐On Delay Time1,2 td(on) 10 nSRise Time1,2 tr VDS = ‐15V, 8 Turn‐Off Delay Time1,2 td(off) ID = ‐1A, VGS = ‐10V, RGS = 2.7Ω 25 Fall Time1,2 tf 6 SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS ‐ 35 A Pulsed Current3 ISM ‐ 70 Forward Voltage1 VSD IF = ‐20A, VGS = 0V ‐ 1.3 V Reverse Recovery Time trr IF = IS, dlF/dt = 100A / S 32 nS Reverse Recovery Charge Qrr 26 nC
p.3 EMB20P03A B20 P03 ABCDEFG 1Pulse test : Pulse Width 300 sec, Duty Cycle 2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. Ordering & Marking Information: Device Name: EMB20P03A for DPAK(TO‐252) B20P03: Device Name ABCDEFG: Date Code
p.4 EMB20P03A T = 125°C ‐ V ‐ Gate‐Source Voltage( V ) R ‐ On‐Resistance(Ω) DS(ON) 0.01 0.02 GS T = 25°CA A 0.05 0.03 0.04 0.06 861 0 I = ‐10 AD On‐Resistance Variation with Gate‐Source Voltage ‐V ‐ Gate‐Source Voltage( V ) ‐I ‐ Drain Current( A )D 1.5 GS 22 . 5 V = ‐ 5V DS 3.53 4 T = 125°CA ‐ 55°C 25°C Transfer Characteristics Body Diode Forward Voltage Variation with Source Current and Temperature 25°C ‐V ‐ Body Diode Forward Voltage( V ) 0.6 0.1 ‐Is ‐ Reverse Drain Current( A ) 0.0001 0.001 0.01 SD 0.2 0.4 V = 0V 100 T = 125°CA GS 0.8 1.0 ‐55°C 1.2 I = ‐20 A T ‐ Junction Temperature (°C) R ‐ Normalized Drain‐Source On‐Resistance ‐50 0.6 DS(on) 0.8 1.0 J ‐25 0 25 50 D V = ‐10V 1.2 1.4 1.6 GS 15010075 125 On ‐Resistance Variation with Temperature ‐ 5.0V ‐V ‐ Drain‐Source Voltage( V ) ‐I ‐ Drain Current( A ) D DS GSV = ‐ 10V ‐ 7.0V ‐ 4.5V On‐Region Characteristics ‐ 6 V ‐ I ‐ Drain Current( A ) On‐Resistance Variation with Drain Current and Gate Voltage R ‐Normalized Drain‐Source On‐Resistance 1.6 0.8 DS(ON) 1.2 1.0 1.4 D 2.2 1.8 2.0 2.4 ‐ 5 V V = ‐ 4.5 VGS 30 40 ‐ 7 V ‐ 10 V
p.5 EMB20P03A ‐V ‐ Dr ai n‐Source Vol tage( V ) Ma x i mu m Safe Oper at i ng Area ‐I ‐ Drain Current( A ) V = ‐10V Single Pul se R = 3°C/W T = 25°C 0.1 0.1 D DS JC C GS R Limit 100 DS(ON) 10 100 100 μS 100mS 1000 DC 10S 10mS 1mS t ,Time (sec) P(pk),Peak Transient Power(W) 0.001 0.10.01 1011 0 0 Single Pulse R = 3°C/W T = 25°CC θJC Single Pulse Maximum Power Dissipation 0.5 0.3 0.2 0.05 0.03 0.02 Notes : C θ JC θ JC 100 1000 J 101 DM 1.Duty Cycle,D = 2.R =3°C/W θ JC 3.T ‐ T = P * R (t) 4.R (t)=r(t) * Rθ JC 0.2 0.05 0.1 0.1 Duty Cycle = 0.5 0.01 Single Pulse 0.02 0.01 r(t),Normalized Effective Transient Thermal Resistance Transient Thermal Response Curve t ,Time ( mSEC ) Q ‐ Gate Charge( nC ) Gate Charge Characteristics ‐ V ‐ Gate‐Source Voltage( V )GS g 5 10 I = ‐ 20A D 2015 25 ‐ 15VDSV = ‐ 5V ‐ 10V ‐ V , Drain‐Source Voltage( V ) Capacitance( pF ) 400 800 DS 5 10 Coss Crss 1200 1600 2000 Ciss 2515 20 30 GS f = 1 MHz V = 0 V Capacitance Characteristics
p.6 EMB20P03A 2.32.3 7.00 2.00 1.502.50 7.00 H L B C A P D3 D E Outline Drawing Dimension A A1 B B1 B2 C D D2 D3 E E2 H L L1 L2 L3 P Footprint