STP33N60M2 integrated circuit reference

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STP33N60M2

STMicroelectronics

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to…

Manufacturer
STMicroelectronics
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20 Pages / 1Mb

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Product Information

STP33N60M2 specifications and overview.

Summary

N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages November 2013 Rev 2

Description

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. TO-220 1 2 3 TAB TO-220FP 1 2 3 TO-247 1 2 3 1 2 3 TAB I PAK 2 AM15572v1 , TAB

Source title STP33N60M2 Datasheet(PDF) - STMicroelectronics