B3D50120H2 BASICSEMI | Alldatasheet
Document overview
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- PDF pages: 7
Technical content
Features
Low leakage current (IR) Zero reverse recovery current Temperature independent switching behavior Positive temperature coefficient on VF High surge current capacity Low capacitive charge System cost savings due to smaller magnetics System efficiency improvement over Si diodes Reduction of heat sink requirements Switch mode power supplies (SMPS) Uninterruptible power supplies Server/telecom power supplies Power factor correction Solar Enabling higher frequency Reduced EMI
Applications
Rev. 0.0 Electrical Connection backside
2 / 7www.basicsemi.com Maximum Ratings (TC=25°C unless otherwise specified) Thermal Characteristics Parameter Value Unit Symbol Parameter Test conditions UnitValue VRRM VRSM EAS IF IFSM IFRM ∫i 2dt Ptot Tj Tstg Repetitive peak reverse voltage Non-repetitive peak reverse voltage Single pulse avalanche energy Continuous forward current Non-repetitive forward surge current Repetitive forward surge current i2t value Power dissipation Operating junction temperature Storage temperature TO-247 mounting torque M3 Screw TC=25°C TC=25°C TC=110°C TC=25°C, tp=10ms TC=25°C, tp=10ms, Half sine wave TC=25°C, tp=10ms, Half sine wave 1200 1200 312 300 250 450 142 TC=135°C 67 TC=150°C 50 652 282 -55~175 -55~175 0.7 V V mJ A A A A2S W Nm Min. Typ. Max.
0.23 K/WThermal resistance from junction to caseRth(jc)
TC=25°C, L=1mH, IAS=25A, V=140V B3D50120H2 SiC Schottky Diode Rev. 0.0
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Electrical Characteristics
Symbol Parameter Test conditions Unit Tj=25°C IF=50A Tj=25°C IF=50A Tj=175°C 1200 1.46 2.1 1.6 2.5 100 V V μA Min. Typ. Max. Value VDC VF IR DC blocking voltage Diode forward voltage Reverse current VR=1200V Tj=25°C VR=1200V Tj=175°C AC Characteristics Symbol Parameter Test conditions Unit 242 2690 228 165 Min. Typ. Max. Value QC C EC Total capacitive charge Total capacitance Capacitance stored energy nC pF μJVR=800V VR=1V f=1MHz VR=400V f=1MHz VR=800V f=1MHz VR=800V Tj=25°C QC=∫0 C(V)dV VR B3D50120H2 SiC Schottky Diode Rev. 0.0
6 / 7www.basicsemi.com Package Dimensions B3D50120H2 SiC Schottky Diode Rev. 0.0 21.00D SYMBOL MIN NOM MAX mm A 19.62 19.92 3.603.40 a b c e 1.60 L
10.88 BSC
-L1 φ P φ P1 5.20 2.61 2.15 0.15 1.36 0.75 21.30 16.85 13.60 4.70 20.22 4.30 3.80 7.207.00 7.40 S 6.155.95 6.35 4.80 2.21 1.85 1.11 0.51 16.25 20.80 15.80E 16.1015.50 4.30 1.801.40 13.00 5.00 2.00 1.21 b2 2.211.91 2.01 0.61 16.55 13.30 4.50 2.41Recommended Solder Pad Layout all units are in millimeters. E D L b e A c φP a a S φP1
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Revision History
BASiC Semiconductor Ltd. Shenzhen, China © 2024 BASiC Semiconductor Ltd. All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest BASiC Semiconductor Office Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, BASiC semiconductor Ltd. hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Document Version Date of Release Description of Changes Rev. 0.0 2024-03-28 Release of the datasheet. B3D50120H2 SiC Schottky Diode Rev. 0.0