B3D40120HC BASICSEMI | Alldatasheet
Document overview
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Technical content
Features
1 / 7www.basicsemi.com Part Number Marking Package B3D40120HC B3D40120HC TO-247-3 Benefits Low leakage current (IR) Zero reverse recovery current Temperature independent switching behavior Positive temperature coefficient on VF High surge current capacity Low capacitive charge System cost savings due to smaller magnetics System efficiency improvement over Si diodes Reduction of heat sink requirements Switch mode power supplies (SMPS) Uninterruptible power supplies Server/telecom power supplies Power factor correction Solar Enabling higher frequency Reduced EMI
Applications
Rev. 0.0 B3D40120HC 2 3 backside2 Electrical Connection Pin1 - Anode Pin2 and backside - Cathode Pin3 - Anode * Per Leg, ** Per Device
2 / 7www.basicsemi.com Maximum Ratings (TC=25°C unless otherwise specified) Thermal Characteristics Parameter Value Unit Symbol Parameter Test conditions UnitValue VRRM VRSM IF IFSM ∫i 2dt Ptot Tj Tstg Repetitive peak reverse voltage Non-repetitive peak reverse voltage Continuous forward current Non-repetitive forward surge current i2t value Power dissipation Operating junction temperature Storage temperature TO-247 mounting torque M3 Screw TC=25°C TC=150°C TC=135°C TC=25°C TC=110°C TC=25°C, tp=10ms TC=25°C, tp=10ms Half sine wave 1200 1200 160* 128* 60*/120** 20*/40** 28*/56** 258* 112* -55~175 -55~175 0.7 V V A A A2S W Nm Min. Typ. Max. 0.58*/ 0.28** K/WThermal resistance from junction to caseRth(jc) Symbol EAS Single pulse avalanche energy TC=25°C, L=1mH, IAS=22A, 242 mJ V=140V IFRM Repetitive forward surge current TC=25°C, tp=10ms Half sine wave 90* A Rev. 0.0 B3D40120HC * Per Leg, ** Per Device * Per Leg, ** Per Device
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Electrical Characteristics
Symbol Parameter Test conditions Unit Tj=25°C IF=20A Tj=25°C IF=20A Tj=175°C 1200 1.40 2.03 1.62 2.52 150 V V μA Min. Typ. Max. Value VDC VF IR DC blocking voltage Diode forward voltage Reverse current VR=1200V Tj=25°C VR=1200V Tj=175°C AC Characteristics Symbol Parameter Test conditions Unit 106 1180 100 Min. Typ. Max. Value QC C EC Total capacitive charge Total capacitance Capacitance stored energy nC pF μJVR=800V VR=1V f=1MHz VR=400V f=1MHz VR=800V f=1MHz VR=800V Tj=25°C QC=∫0 C(V)dV VR Rev. 0.0 B3D40120HC
6 / 7www.basicsemi.com Rev. 0.0 B3D40120HC e c S b E DL A ΦPΦP1 21.00 21.30D SYMBOL MIN NOM MAX mm A 15.80 16.10 3.60 6.15 b c E e L 5.436BSC φ P φ P1 S 5.20 2.59 2.15 1.36 2.21 3.41 0.75 16.85 5.20 2.70 20.22 4.30 3.80 7.40 6.30 4.80 2.21 1.85 1.11 1.91 2.91 0.51 20.80 16.25 15.50 13.00 4.40 1.50 19.62 3.40 6.00 5.00 2.00 2.01 16.55 13.30 13.60 19.92 2.41 1.17D2 1.351.05 Recommended Solder Pad Layout all units are in millimeters.
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Revision History
BASiC Semiconductor Ltd. Shenzhen, China © 2023 BASiC Semiconductor Ltd. All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest BASiC Semiconductor Office Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, BASiC semiconductor Ltd. hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Document Version Date of Release Description of Changes Rev. 0.0 2023-07-04 Release of the datasheet. Rev. 0.0 B3D40120HC