B3D40065HC BASICSEMI | Alldatasheet

Document overview

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Technical content

Features

Pin2 and backside - Cathode  Pin3 - Anode Package Pin Definitions Package Parameters 1 / 7www.basicsemi.com Part Number Marking Package B3D40065HC B3D40065HC TO-247-3 Electrical Connection* Per Leg, ** Per Device Benefits Low leakage current (IR) Zero reverse recovery current Temperature independent switching behavior Positive temperature coefficient on VF High surge current capacity  Low capacitive charge System cost savings due to smaller magnetics System efficiency improvement over Si diodes Reduction of heat sink requirements Switch mode power supplies (SMPS) Uninterruptible power supplies Server/telecom power supplies Power factor correction  Solar Enabling higher frequency Reduced EMI

Applications

Rev. 0.0 B3D40065HC

2 / 7www.basicsemi.com Maximum Ratings (TC=25°C unless otherwise specified) Thermal Characteristics Symbol Parameter Value UnitMin. Typ. Max. 0.6*/ 0.3** 0.86* /0.43** K/WThermal resistance from junction to caseRth(jc) * Per Leg, ** Per Device Rev. 0.0 Symbol Parameter Test conditions UnitValue VRRM VRSM EAS IF IFSM IFRM ∫i 2dt Ptot Tj Tstg Repetitive peak reverse voltage Non-repetitive peak reverse voltage Single pulse avalanche energy Continuous forward current Non-repetitive forward surge current Repetitive forward surge current i2t value Power dissipation Operating junction temperature Storage temperature TC=25°C TC=25°C TC=110°C TC=25°C, tp=10ms TC=25°C, tp=10ms, Half sine wave TC=25°C, tp=10ms, Half sine wave 650 650 95.22* 150* TC=110°C, tp=10ms, Half sine wave 140* 120* 112.5* 103*/206** TC=135°C 42*/84** TC=155°C 20*/40** 250* 108* -55~175 -55~175 V V mJ A A A A2S W TC=25°C, L=1mH, IAS=13.8A, V=140V B3D40065HC

3 / 7www.basicsemi.com Electrical Characteristics (Per Leg) Static Characteristics Symbol Parameter Test conditions Unit Tj=25°C, IR=100μA IF=20A Tj=25°C IF=20A Tj=175°C 650 1.40 1.76 1.55 2.09 150 V V μA Min. Typ. Max. Value VDC VF IR DC blocking voltage Diode forward voltage Reverse current VR=650V Tj=25°C VR=650V Tj=175°C AC Characteristics Symbol Parameter Test conditions Unit 869 104 8.4 Min. Typ. Max. Value QC C EC Total capacitive charge Total capacitance Capacitance stored energy nC pF μJVR=400V VR=1V f=1MHz VR=200V f=1MHz VR=400V f=1MHz VR=400V Tj=25°C QC=∫0 C(V)dV VR Rev. 0.0 B3D40065HC

6 / 7www.basicsemi.com Recommended Solder Pad Layout all units are in millimeters. Rev. 0.0 e c S b E DL A ΦPΦP1 D SYMBOL MIN NOM MAX mm A 6.16 6.266.06 b c E e 2.50 L 5.44 5.545.34 φ P φ P1 S 5.20 2.59 2.15 1.36 2.21 3.21 0.75 21.30 16.85 16.10 13.60 5.20 2.70 4.30 3.80 7.30 4.70 2.21 1.85 1.11 1.91 2.91 0.51 20.80 16.25 15.50 13.00 4.80 2.30 19.62 3.40 3.60 5.00 2.41 2.00 1.21 2.01 3.01 0.61 21.00 16.55 15.80 13.30 5.00 19.92 20.22 Package Dimensions B3D40065HC

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Revision History

BASiC Semiconductor Ltd. Shenzhen, China © 2024 BASiC Semiconductor Ltd. All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest BASiC Semiconductor Office Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, BASiC semiconductor Ltd. hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Document Version Date of Release Description of Changes Rev. 0.0 2024-10-31 Release of the datasheet. Rev. 0.0 B3D40065HC