B3D10120F BASICSEMI | Alldatasheet
Document overview
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Technical content
Features
Pin1 and backside - Cathode Pin2 - Anode Package Pin Definitions Package Parameters 1 / 8www.basicsemi.com Part Number Marking Package B3D10120F B3D10120F TO-263-2 backside Electrical Connection Benefits Low leakage current (IR) Zero reverse recovery current Temperature independent switching behavior Positive temperature coefficient on VF High surge current capacity Low capacitive charge System cost savings due to smaller magnetics System efficiency improvement over Si diodes Reduction of heat sink requirements Switch mode power supplies (SMPS) Uninterruptible power supplies Server/telecom power supplies Power factor correction Solar Enabling higher frequency Reduced EMI
Applications
Tape & Reel Packing PCS/Reel Reels/Box PCS/Box 1 800800TO-263-2 Rev. 0.0
2 / 8www.basicsemi.com Thermal Characteristics Symbol Parameter Value UnitMin. Typ. Max. 0.89 1.15 K/WThermal resistance from junction to caseRth(jc) Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter Test conditions UnitValue VRRM VRSM EAS IF IFSM IFRM IF,Max ∫i 2dt Ptot Tj Tstg Repetitive peak reverse voltage Non-repetitive peak reverse voltage Single pulse avalanche energy Continuous forward current Non-repetitive forward surge current Repetitive forward surge current Non-repetitive peak forward current i2t value Power dissipation Operating junction temperature Storage temperature TC=25°C TC=25°C TC=110°C TC=25°C, tp=10ms TC=25°C, tp=10ms, Half sine wave TC=25°C, tp=10ms, Half sine wave 1200 1200 TC=110°C, tp=10ms, Half sine wave TC=25°C, tp=10μs, pulse TC=110°C, tp=10μs, pulse 840 790 40.5 TC=135°C 15 TC=155°C 10 169 -55~175 -55~175 V V mJ A A A A A2S W TC=25°C, L=1mH, IAS=14A, V=140V B3D10120F Rev. 0.0
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Electrical Characteristics
Symbol Parameter Test conditions Unit Tj=25°C, IR=100μA IF=10A Tj=25°C IF=10A Tj=175°C 1200 1.40 2.05 1.60 2.64 100 V V μA Min. Typ. Max. Value VDC VF IR DC blocking voltage Diode forward voltage Reverse current VR=1200V Tj=25°C VR=1200V Tj=175°C AC Characteristics Symbol Parameter Test conditions Unit 523 Min. Typ. Max. Value QC C EC Total capacitive charge Total capacitance Capacitance stored energy nC pF μJVR=800V VR=1V f=1MHz VR=400V f=1MHz VR=800V f=1MHz VR=800V Tj=25°C QC=∫0 C(V)dV VR B3D10120F Rev. 0.0
6 / 8www.basicsemi.com Typical Performance Typical reverse charge as function of reverse voltage Figure 9 B3D10120F 1E-5 1E-4 0.001 0.01 100 1000 110℃ IFSM (A) TP (s) 25℃ Rev. 0.0
7 / 8www.basicsemi.com Package Dimensions SYMBOL MIN NOM MAX mm A 7.65 - b c E e H 15.00 L θ 4.64 1.40 2.70 0.25 0.90 1.75 0.60 9.02 10.36 2.64 15.88 4.24 1.15 2.30 0.00 0.70 1.20 0.40 8.82 6.82 9.96 2.44 14.61 1.26 1.78 0.15 1.36 2.32 1.46 2.79 0.35 4.44 1.27 2.48 0.10 0.80 1.55 0.50 8.92 10.16 2.54 0.25 e1 5.08 5.184.98 Recommended Solder Pad Layout all units are in millimeters. E D1 H2 b A H C L θ e B3D10120F Rev. 0.0
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Revision History
BASiC Semiconductor Ltd. Shenzhen, China © 2024 BASiC Semiconductor Ltd. All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest BASiC Semiconductor Office Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, BASiC semiconductor Ltd. hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Document Version Date of Release Description of Changes Rev. 0.0 2024-10-16 Release of the datasheet. B3D10120F Rev. 0.0