B2M065120H

B2M065120H BASICSEMI | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 13

Technical content

Features

Low On-Resistance with High Blocking Voltage Low Capacitance Avalanche Ruggedness Halogen Free, Rohs Compliant High Frequency Operation Enabling Higher Switching Frequency Increased Power Density Reduction of Heat Sink Requirements Switch Mode Power Supplies (SMPS) Power Inverter & Solar Inverter Pin1 - Gate Pin2 - Drain  Pin3 - Source Motor Drivers & EV Charging Station DC/DC Converter

Applications

B2M065120H B2M065120H TO-247-3 Rev. 0.0 B2M065120H

2 / 13www.basicsemi.com Electrical Characteristics (Defined at Tj=25°C unless otherwise specified) Static Characteristics VGS=18V, VDS=0V VDS=1200V, VGS=0V VDS=1200V, VGS=0V,Tj=175°C VGS=18V, ID=20A VGS=18V, ID=20A,Tj=175°C VDS=10V, ID=20A VGS=VDS, ID=5mA VGS=VDS, ID=5mA,Tj=175°C Maximum Ratings Symbol Parameter Test conditions Value UnitMin. Typ. Max. 1200 2.82.3 3.5 1.9 100 200 9065 110 8.5 V V nA μA mΩ S Drain-Source Breakdown Voltage Gate Threshold Voltage Transconductance Gate-Source Leakage Current Zero Gate Voltage Drain Current Drain-Source On-State Resistance V(BR)DSS VGS(th) IGSS IDSS RDS(on) gfs VGS=0V, ID=100μA Pulse with tp limited by Tjmax Symbol Parameter Test conditions UnitValue VDSmax VGSmax VGSop ID ID,pulse Ptot Tj Tstg Drain-Source Voltage Gate-Source Voltage Recommend Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Operating Junction Temperature Storage Temperature V V V A A A W -8/22 -4/18 250 -55~175 VGS=18V, TC=25°C VGS=18V, TC=100°C TC=25°C, Tj=175°C 1200VGS=0V, ID=100μA -55~175 Md TO-247 mounting torque M3 Screw N·m0.7 Rev. 0.0 1) Note: When using MOSFET Body Diode VGSmax=-4/22V B2M065120H

3 / 13www.basicsemi.com Thermal Characteritics Symbol Parameter Value UnitMin. Typ. Max.

0.60 K/WThermal Resistance from Junction to CaseRth(jc)

Gate Charge Characteristics Symbol Parameter Test conditions Value Unit Min. Typ. Max. 1300 1.8 pF pF pF Ω Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance Ciss Coss Crss RG(int) VGS=0V, VDS=800V f =1MHz, VAC=25mV f =1MHz, VAC=25mV Symbol Parameter Test conditions Value UnitMin. Typ. Max. nC nC nC Gate to Source Charge Gate to Drain Charge Total Gate Charge QGS QGD QG VDS=800V ID =20A VGS=-4/+18V Rev. 0.0 B2M065120H

4 / 13www.basicsemi.com Rev. 0.0 B2M065120H Switching Characteristics Symbol Parameter Test conditions Value UnitMin. Typ. Max. 350 ns ns ns ns uJ uJ Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy td(on) tr td(off) tf Eon Eoff VDC=800V, VGS=-4/18V ID=20A, RG(ext)=2.2Ω Lσ=80nH, Tj=25°C Inductive Load Eon includes diode reverse recovery 470 ns ns ns ns uJ uJ Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy td(on) tr td(off) tf Eon Eoff VDC=800V, VGS=-4/18V ID=20A, RG(ext)=2.2Ω Lσ=80nH, Tj=175°C Inductive Load Eon includes diode reverse recovery Reverse Diode Characteristics Symbol Parameter Value Unit Min. Typ. Max. 4.4 150 V A A ns nC A Diode Forward Voltage Pulse Diode Current Continuous Diode Forward Current Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current VSD IS IS,pulse trr Qrr Irrm Test conditions VDC=800V, ISD=20A -diF/dt=2200A/μs Tj=25°C VGS=-4V, ISD=10A, Tj=25°C VGS=-4V, Tj=25°C VGS=-4V, pulse width tp limited by Tjmax 3.7 400 V ns nC A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current VSD trr Qrr Irrm VDC=800V, ISD=20A -diF/dt=2200A/μs Tj=175°C VGS=-4V, ISD=10A, Tj=175°C

11 / 13www.basicsemi.com Typical Performance Transient Thermal Impedance (Junction - Case) Figure 25 Rev. 0.0 Forward Biased Safe Operating AreaFigure 26 B2M065120H 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 0.001 0.01 0.1 Zthjc (K/W) tp (s) D=0.5 D=0.3 D=0.1 D=0.05 D=0.02 D=0.01 Single Pulse 0.1 1 10 100 1000 0.1 100 10ms 1ms 100μs ID (A) VDS (V) 100ms

e c S b E DL A ΦPΦP1 SiC MOSFET 12 / 13www.basicsemi.com Package Dimensions D SYMBOL MIN NOM MAX mm A

6.16 BSC

b c E e 2.50 L

5.44 BSC

φ P φ P1 S 5.20 2.59 2.15 1.36 2.21 3.21 0.75 21.30 16.85 16.10 13.60 5.20 2.70 4.30 3.80 7.30 4.80 2.21 1.85 1.11 1.91 2.91 0.51 20.80 16.25 15.50 13.00 4.80 2.30 19.62 3.40 3.60 5.00 2.41 2.00 1.21 2.01 3.01 0.61 21.00 16.55 15.80 13.30 5.00 19.92 20.22 Rev. 0.0 B2M065120H

13 / 13www.basicsemi.com

Revision History

BASiC Semiconductor Ltd. Shenzhen, China © 2023 BASiC Semiconductor Ltd. All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest BASiC Semiconductor Office Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, BASiC semiconductor Ltd. hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Document Version Date of Release Description of Changes Rev. 0.0 2023-05-22 Draft datasheet created. Rev. 0.0 B2M065120H