B2M012120N BASICSEMI | Alldatasheet
Document overview
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Technical content
Features
High Blocking Voltage with low On-Resistance High speed switching with low capacitances Easy to parallel and simple to drive Real Kelvin source connection Base plate with Aluminium Nitride isolation Avalanche Ruggedness Halogen Free, RoHs Compliant Higher Frequency operation Higher system efficiency Increased power Density Reduction of Heat Sink Requirements Switch Mode Power Supplies (SMPS) Power Inverter & Solar Inverter Motor Drivers & EV Charging Station High Voltage DC/DC Converter UPS Induction heating and Welding
Applications
B2M012120N B2M012120N SOT-227 Pin1 - Kelvin Source Pin2 - Gate Pin3 - Drain Pin4 - Power Source Package Pin Definitions 2 G KS PS Rev. 0.0 Power Source (4) Drain (3) Gate (2) Kelvin Source (1) B2M012120N
2 / 13www.basicsemi.com Electrical Characteristics (Defined at Tj=25°C unless otherwise specified) Static Characteristics VGS=18V, VDS=0V VDS=1200V, VGS=0V VDS=1200V, VGS=0V, Tj=175°C VGS=18V, ID=68A VGS=18V, ID=68A,Tj=175°C VDS=10V, ID=68A VGS=VDS, ID=36.4mA VGS=VDS, ID=36.4mA, Tj=175°C Maximum Ratings Symbol Parameter Test conditions Value UnitMin. Typ. Max. 1200 3.82.8 4.8 3.2 100 500 1512 V V nA μA mΩ S Drain-Source Breakdown Voltage Gate Threshold Voltage Transconductance Gate-Source Leakage Current Zero Gate Voltage Drain Current Drain-Source On-State Resistance V(BR)DSS VGS(th) IGSS IDSS RDS(on) gfs VGS=0V, ID=30mA Pulse with tp limited by Tjmax Symbol Parameter Test conditions UnitValue VDSmax VGSmax VGSop ID ID,pulse Ptot Tj Tstg Drain-Source Voltage Gate-Source Voltage Recommend Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Operating Junction Temperature Storage Temperature V V V A A A W -4/21 -2/18 101 143 215 555 -40~175 VGS=18V, TC=25°C VGS=18V, TC=100°C TC=25°C, Tj=175°C 1200VGS=0V, ID=1mA -40~175 Rev. 0.0 B2M012120N
3 / 13www.basicsemi.com Thermal Characteritics Package Chracteristics Symbol Parameter Value UnitMin. Typ. Max. 0.27 2500 10.4 9.6 4.4 8.4 1.5 1.3 K/W N/m N/m g V mm mm mm mm Thermal Resistance from Junction to Case Mounting torque M4-0.7 screws M4-0.7 screws Terminal to Terminal Terminal to Backside Terminal to Terminal Terminal to Backside IISOL<1mA, RMS, 50Hz,1min Terminal connection torque Package weight Isolation voltage Creepage Distance on Surface Clearance Distance Through Air Rth(jc) Md Mdt Wt VISOL dCtt dCtb dStt dStb AC Characteristics Gate Charge Characteristics Symbol Parameter Test conditions Test conditions Value Unit Min. Typ. Max. 7847 228 4.1 pF pF pF Ω Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance Ciss Coss Crss RG(int) VGS=0V, VDS=800V f =100kHz, VAC=25mV f =1MHz, VAC=25mV Symbol Parameter Test conditions Value UnitMin. Typ. Max. 101 307 nC nC nC Gate to Source Charge Gate to Drain Charge Total Gate Charge QGS QGD QG VDS = 800V ID = 68A VGS = -2/+18V Symbol Parameter Value UnitMin. Typ. Max.Test conditions Rev. 0.0 B2M012120N
4 / 13www.basicsemi.com Switching Characteristics Symbol Parameter Test conditions Value UnitMin. Typ. Max. 1735 487 ns ns ns ns uJ uJ Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy td(on) tr td(off) tf Eon Eoff VDC=800V, VGS=-2/18V ID=68A, RG(ext)=1Ω Lσ=115nH, Tj=25°C diode: body diode at VGS=-2V Inductive Load Eon includes diode reverse recovery VDC=800V, VGS=-2/18V ID=68A, RG(ext)=1Ω Lσ=115nH, Tj=175°C diode: body diode at VGS=-2V Inductive Load Eon includes diode reverse recovery 2048 646 ns ns ns ns uJ uJ Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy td(on) tr td(off) tf Eon Eoff Reverse Diode Characteristics Symbol Parameter Value Unit Min. Typ. Max. 3.7 110 196 470 V A A ns nC A Diode Forward Voltage Pulse Diode Current Continuous Diode Forward Current Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current VSD ISD ISD,pulse trr Qrr Irrm Test conditions VDC=800V, ISD=68A -diF/dt=2100A/μs Tj=25°C VGS=-2V, TC=25°C VGS=-2V, pulse width tp limited by Tjmax 1340 ns nC A Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current trr Qrr Irrm VDC=800V, ISD=68A -diF/dt=2100A/μs Tj=175°C VGS=-2V, ISD=68A, Tj=25°C VGS=-2V, ISD=68A, Tj=175°C Rev. 0.0 B2M012120N
11 / 13www.basicsemi.com Typical Performance Transient Thermal Impedance (Junction - Case) Figure 25 Forward Biased Safe Operating AreaFigure 26 Rev. 0.0 B2M012120N 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 0.001 0.01 0.1 Zthjc (K/W) tp (s) D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single Pulse 0.1 1 10 100 1000 0.1 100 1μs 10μs 100μs 10ms ID (A) VDS (V) 1ms
12 / 13www.basicsemi.com Package Dimensions Rev. 0.0 M4 hex nut A D J K I P M N L S B C O R H Q G F H Items Min Max mm A B C D E F G I J K L M N 12.70 O P Q R S 31.10 7.70 4.10 4.10 4.10 14.80 30.10 38.00 23.80 11.60 9.40 0.75 12.30 1.90 2.40 24.50 3.20 25.50 26.40 27.00 4.20 5.40 3.80 5.10 31.90 8.10 4.40 4.40 4.40 15.20 30.30 38.40 25.50 12.70 9.60 0.85 2.10 Typ 12.50 2.80 25.10 26.70 4.00 5.25 31.50 8.00 4.20 4.20 4.20 15.00 30.20 38.20 24.65 12.20 9.50 0.80 2.00 B2M012120N
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Revision History
BASiC Semiconductor Ltd. Shenzhen, China © 2024 BASiC Semiconductor Ltd. All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest BASiC Semiconductor Office Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, BASiC semiconductor Ltd. hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Document Version Date of Release Description of Changes Rev. 0.0 2024-01-29 Draft datasheet created. Rev. 0.0 B2M012120N