B2DM060065N1 BASICSEMI | Alldatasheet

Document overview

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Technical content

Features

Low leakage current (IR) Zero reverse recovery current Temperature independent switching behavior Positive temperature coefficient on VF High surge current capacity  Low capacitive charge Copper base plate with AlN isolation for low thermal resistance System cost savings due to smaller magnetics System efficiency improvement over Si diodes Reduction of heat sink requirements Switch mode power supplies (SMPS) Uninterruptible power supplies Server/telecom power supplies Power factor correction  Solar Pin 1,4 - Cathode Pin 2,3 - Anode Enabling higher frequency Reduced EMI  Isolation voltage: 2500V

Applications

1 / 7www.basicsemi.com Part Number Marking Package B2DM060065N1 B2DM060065N1 SOT-227 Electrical Connection 3 4 * Per Leg, ** Per Device *Backside is isolated B2DM060065N1 Rev. 0.0

2 / 7www.basicsemi.com Maximum Ratings (TC=25°C unless otherwise specified) Thermal and Mechanical Characteristics Symbol Parameter Value Unit Symbol Parameter Test conditions Test conditions UnitValue VRRM VRSM IF IFSM ∫i 2dt Ptot Tj Tstg Repetitive peak reverse voltage Non-repetitive peak reverse voltage Continuous forward current Non-repetitive forward surge current i2t value Power dissipation Operating junction temperature Storage temperature TC=25°C TC=25°C TC=110°C TC=25°C, tp=10ms TC=25°C, tp=10ms Half sine wave 650 650 101*/202** TC=110°C 60*/120** 386* 745* 300*/600** 130*/260** -40~175 -40~175 V V A A A2S W Min. Typ. Max. 0.50*/ 0.25** 1.5 1.3 28.14 2500 10.4 9.6 4.4 8.4 K/W N/m N/m g V mm mm mm mm Thermal resistance from junction to case Mounting torque M4-0.7 screws M4-0.7 screws Terminal to Terminal Terminal to Backside Terminal to Backside Terminal to Terminal IISOL<1mA, RMS, 50Hz,1min Terminal connection torque Package weight Isolation voltage Internal isolation Creepage Distance on Surface Clearance Distance Through Air Rth(jc) Md Mdt Wt VISOL dCtt dCtb dStb AlN dStt * Per Leg, ** Per Device * Per Leg, ** Per Device B2DM060065N1 Rev. 0.0

3 / 7www.basicsemi.com Electrical Characteristics(Per Leg) Static Characteristics Symbol Parameter Test conditions Unit Tj=25°C IF=60A Tj=25°C IF=60A Tj=175°C 650 1.42 1.88 1.8 2.98 500 700 V V μA Min. Typ. Max. Value VDC VF IR DC blocking voltage Diode forward voltage Reverse current VR=650V Tj=25°C VR=650V Tj=175°C AC Characteristics Symbol Parameter Test conditions Unit 169 2771 284 283 42.3 Min. Typ. Max. Value QC C EC Total capacitive charge Total capacitance Capacitance stored energy nC pF μJVR=400V VR=1V f=1MHz VR=300V f=1MHz VR=600V f=1MHz VR=400V Tj=25°C QC=∫0 C(V)dV VR B2DM060065N1 Rev. 0.0

H Items MIN MAX mm A A D J K I P M N L S B C O R H Q B C D E F G G F I J K L M N 12.60 O P Q R S 31.40 7.70 4.20 4.20 4.10 14.90 30.10 38.00 23.80 12.20 9.40 0.75 12.40 1.90 3.10 24.50 3.20 25.40 26.60 27.00 4.20 5.40 3.80 5.10 31.60 8.10 4.40 4.40 4.30 15.10 30.20 38.40 24.20 12.70 9.60 0.85 2.10 B2DM060065N1 Rev. 0.0

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Revision History

BASiC Semiconductor Ltd. Shenzhen, China © 2023 BASiC Semiconductor Ltd. All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest BASiC Semiconductor Office Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, BASiC semiconductor Ltd. hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Document Version Date of Release Description of Changes Rev. 0.0 2023-09-18 Release of the datasheet. B2DM060065N1 Rev. 0.0