B2D08065KS BASICSEMI | Alldatasheet
Document overview
- Manufacturer or author: D
- PDF pages: 7
Technical content
Features
⚫ Ceramic package provides 2.5kV isolation ⚫ Extremely low reverse current ⚫ No reverse recovery current ⚫ Temperature independent switching ⚫ Positive temperature coefficient on V F ⚫ Excellent surge current capability ⚫ Low capacitive charge B2D08065KS Benefits ⚫ Electrically isolated package ⚫ Essentially no switching losses ⚫ System efficiency improvement over Si diodes ⚫ Increased power density ⚫ Enabling higher switching frequency ⚫ Reduction of heat sink requirements ⚫ System cost savings due to smaller magnetics ⚫ Reduced EMI
Applications
⚫ Switch mode power supplies (SMPS) ⚫ Uninterruptible power supplies ⚫ Motor drivers ⚫ Power factor correction ⚫ Pin1- Cathode ⚫ Pin2- Anode Package Pin Definitions Package Parameters Part Number Marking Package B2D08065KS B2D08065KS TO-220-isolated TO-220-isolated
Rev. 0.1 www.basicsemi.com 2 / 7 Maximum Ratings (TC=25℃ unless otherwise specified) SiC Schottky Diode B2D08065KS Symbol Parameter Test conditions Value Unit VRRM Repetitive peak reverse voltage 650 V VRSM Non-repetitive peak reverse voltage 650 V IF Continuous forward current TC=25°C TC=150°C 8 A IFSM Non-Repetitive forward surge current TC=25°C , tp=10ms, Half Sine Wave 64 A ∫i2dt i2t value TC=25°C ,tp=10ms 20.48 A2S Ptot Power dissipation TC=25°C TC=110°C 37 W Tj Operating junction temperature -55~175 °C Tstg Storage temperature -55~175 °C TO-220 mounting torque M3 Screw 0.7 Nm Thermal Characteristics Symbol Parameter Value Unit Min. Typ. Max. Rth(jc) Thermal resistance from junction to case 1.73 K/W
Rev. 0.1 www.basicsemi.com 3 / 7
Electrical Characteristics
Symbol Parameter Test conditions Value Unit Min. Typ. Max. VDC DC blocking voltage Tj=25°C 650 V VF Diode forward voltage IF=8A Tj=25°C IF=8A Tj=175°C 1.28 1.54 V IR Reverse current VR=650V Tj=25°C VR=650V Tj=175°C 10 μA Symbol Parameter Test conditions Value Unit Min. Typ. Max. QC Total capacitive charge VR=400V Tj=25°C 𝑄𝐶 = ∫ C(V)dV VR 24 nC C Total capacitance VR=1V f=1MHz VR=300V f=1MHz VR=600V f=1MHz 365 41.1 40.7 pF EC Capacitance stored energy VR=400V 6 μJ B2D08065KS SiC Schottky Diode
Rev. 0.1 www.basicsemi.com 6 / 7 SYMBOL mm MIN NOM MAX A 4.40 4.50 4.60 B 0.61 0.75 0.88 C 0.46 0.58 0.70 C2 1.21 1.265 1.32 C3 2.40 2.56 2.72 D 8.60 9.15 9.70 E 9.80 10.1 10.4 F 6.55 6.75 6.95 G 5.08 BSC H 28.0 28.9 29.8 L1 3.75 L2 1.14 1.70 L3 2.65 2.80 2.95 V1 45 ° φP 3.88 Package Dimensions G E ΦP F B D A C H B2D08065KS SiC Schottky Diode
Rev. 0.1 www.basicsemi.com 7 / 7 SiC Schottky Diode Information For further information on technology, delivery terms and conditions and prices, please contact the nearest BASiC Semiconductor Office BASiC Semiconductor Ltd. Shenzhen, China © 2021 BASiC Semiconductor Ltd. All Rights Reserved.
Revision History
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, BASiC semiconductor Ltd. hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Document Version Date of Release Description of changes Rev. 0.1 2021-01-26 Release of the preliminary datasheet.