B2D02120E1 BASICSEMI | Alldatasheet
Document overview
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- PDF pages: 7
Technical content
Features
Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Essentially no switching losses System efficiency improvement over Si diodes Increased power density Enabling higher switching frequency Switch mode power supplies (SMPS) Uninterruptible power supplies Pin1,3 and backside - Cathode Pin2 - Anode Motor drivers Power factor correction Reduction of heat sink requirements System cost savings due to smaller magnetics Reduced EMI
Applications
1 / 7www.basicsemi.com Part Number Marking Package B2D02120E1 B2D02120E1 TO-252-3 Electrical Connection B2D02120E1 Rev. 0.0
2 / 7www.basicsemi.com Maximum Ratings (TC=25℃ unless otherwise specified) Thermal Characteristics Symbol Parameter Value Unit Symbol Parameter Test conditions UnitValue VRRM VRSM IF IFSM ∫i 2dt Ptot Tj Tstg Repetitive peak reverse voltage Non-repetitive peak reverse voltage Continuous forward current Non-repetitive forward surge current i2t value Power dissipation Operating junction temperature Storage temperature TC=25℃ TC=165℃ TC=25℃ TC=110℃ TC=25℃, tp=10ms TC=25℃, tp=10ms Half sine wave 1200 1200 2.4 -55~175 -55~175 V V A A A2S W Min. Typ. Max.
1.94 K/WThermal resistance from junction to caseRth(jc)
Rev. 0.0
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Electrical Characteristics
Symbol Parameter Test conditions Unit Tj=25¥ IF=2A Tj=25¥ IF=2A Tj=175¥ 1200 1.35 1.92 1.6 2.8 200 V V μA Min. Typ. Max. Value VDC VF IR DC blocking voltage Diode forward voltage Reverse current VR=1200V Tj=25¥ VR=1200V Tj=175¥ AC Characteristics Symbol Parameter Test conditions Unit 133 Min. Typ. Max. Value QC C EC Total capacitive charge Total capacitance Capacitance stored energy nC pF μJVR=800V VR=1V f=1MHz VR=400V f=1MHz VR=800V f=1MHz VR=800V Tj=25°C QC=∫0 C(V)dV VR B2D02120E1 Rev. 0.0
5.30 REFD1
c H L1 L2 L θ E e b D SiC Schottky Diode 6 / 7www.basicsemi.com Package Dimensions SYMBOL MIN NOM MAX mm A - - b c D E e H L 1.50
2.90 REF
θ 2.38 0.20 1.17 0.90 5.46 0.61 6.22 6.73 10.50 1.75 1.28 1.00 1.95 2.20 0.00 0.90 0.68 5.23 0.43 5.98 6.40 4.63 9.40 1.38 0.88 0.50 1.65 2.30 1.07 0.78 5.33 0.53 6.10 6.60 10.10
0.51 BSC
1.80
2.286 BSC
Rev. 0.0
7 / 7www.basicsemi.com
Revision History
BASiC Semiconductor Ltd. Shenzhen, China © 2022 BASiC Semiconductor Ltd. All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest BASiC Semiconductor Office Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, BASiC semiconductor Ltd. hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Document Version Date of Release Description of Changes Rev 0.0 2022-05-27 Release of the datasheet. B2D02120E1 Rev. 0.0