B1D30065TF BASICSEMI | Alldatasheet
Document overview
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- PDF pages: 7
Technical content
Features
Extremely low reverse current No reverse recovery current Temperature independent switching Positive temperature coefficient on VF Excellent surge current capability Low capacitive charge Essentially no switching losses System efficiency improvement over Si diodes Increased power density Enabling higher switching frequency Switch mode power supplies (SMPS) Uninterruptible power supplies Pin1 - Anode Pin2 - Cathode Pin3 - Anode Motor drivers Power factor correction Reduction of heat sink requirements System cost savings due to smaller magnetics Reduced EMI
Applications
1 / 7www.basicsemi.com Part Number Marking Package B1D30065TF B1D30065TF TO-3PF Electrical Connection * Per Leg, ** Per Device Rev. 0.0
2 / 7www.basicsemi.com Maximum Ratings (TC=25℃ unless otherwise specified) Thermal Characteristics Symbol Parameter Value Unit Symbol Parameter Test conditions UnitValue VRRM VRSM IF IFSM ∫i 2dt Ptot Tj Tstg Repetitive peak reverse voltage Non-repetitive peak reverse voltage Continuous forward current Non-repetitive forward surge current i2t value Power dissipation Operating junction temperature Storage temperature TO-3PF mounting torque M3 Screw TC=25℃ TC=125℃ TC=25℃ TC=110℃ TC=25℃, tp=10ms TC=25℃, tp=10ms Half sine wave 650 650 110* 61* 30*/60** 15*/30** 72* 31* -55~175 -55~175 0.6 V V A A A2S W Nm Min. Typ. Max. 2.09*/ 1.05** K/WThermal resistance from junction to caseRth(jc) * Per Leg, ** Per Device * Per Leg, ** Per Device Rev. 0.0
3 / 7www.basicsemi.com Electrical Characteristics (Per Leg) Static Characteristics Symbol Parameter Test conditions Unit Tj=25¥ IF=15A Tj=25¥ IF=15A Tj=175¥ 650 1.37 1.62 1.6 2.3 120 300 V V μA Min. Typ. Max. Value VDC VF IR DC blocking voltage Diode forward voltage Reverse current VR=650V Tj=25¥ VR=650V Tj=175¥ AC Characteristics Symbol Parameter Test conditions Unit 761 Min. Typ. Max. Value QC C EC Total capacitive charge Total capacitance Capacitance stored energy nC pF μJVR=300V VR=1V f=1MHz VR=300V f=1MHz VR=600V f=1MHz VR=400V Tj=25°C QC=∫0 C(V)dV VR Rev. 0.0
16.5 16.7D1 B1D30065TF SiC Schottky Diode 6 / 7www.basicsemi.com Package Dimensions SYMBOL MIN NOM MAX mm A 15.5 15.7 2.5 2.3 9.8 22.8 1.8 b C D P E e G Q 9.9 4.5 K K 5.7 3.2 0.95 2.2 3.5 26.7 3.8 5.75 10.1 4.65 2.7 2.2 10.2 23.2 2.2 5.3 2.8 0.66 1.8 3.1 0.8 26.3 16.3 14.5 14.7D2 14.3 3.4 15.3 3.8 5.15 9.7 4.35 14.6 1.8 5.5 0.86 3.3 0.9 26.5 3.6 4 4.2 5.45 14.8 K C ΦP A A1H1 G E b K D2 Q G e D Rev. 0.0
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Revision History
BASiC Semiconductor Ltd. Shenzhen, China © 2022 BASiC Semiconductor Ltd. All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest BASiC Semiconductor Office Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, BASiC semiconductor Ltd. hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Document Version Date of Release Description of Changes Rev 0.0 2022-05-20 Release of the datasheet. Rev. 0.0