B1D02065E BASICSEMI | Alldatasheet
Document overview
- Manufacturer or author: D
- PDF pages: 7
Technical content
Features
⚫ Extremely low reverse current ⚫ No reverse recovery current ⚫ Temperature independent switching ⚫ Positive temperature coefficient on V F ⚫ Excellent surge current capability ⚫ Low capacitive charge B1D02065E Benefits ⚫ Essentially no switching losses ⚫ System efficiency improvement over Si diodes ⚫ Increased power density ⚫ Enabling higher switching frequency ⚫ Reduction of heat sink requirements ⚫ System cost savings due to smaller magnetics ⚫ Reduced EMI
Applications
⚫ Switch mode power supplies (SMPS) ⚫ Uninterruptible power supplies ⚫ Motor drivers ⚫ Power factor correction ⚫ Pin1- Cathode ⚫ Pin2- Anode Package Pin Definitions Package Parameters Part Number Marking Package B1D02065E B1D02065E TO-252-2 CASE TO-252-2 CASE
Rev. 2.1 www.basicsemi.com 2 / 7 Maximum Ratings (TC=25℃ unless otherwise specified) SiC Schottky Diode B1D02065E Symbol Parameter Test conditions Value Unit VRRM Repetitive peak reverse voltage 650 V VRSM Non-repetitive peak reverse voltage 650 V IF Continuous forward current TC=25°C TC=160°C 2 A IFSM Non-repetitive forward surge current TC=25°C , tp=10ms, Half Sine Wave 16 A ∫i2dt i2t value TC=25°C ,tp=10ms 1.28 A2S Ptot Power dissipation TC=25°C TC=110°C 17 W Tj Operating junction temperature -55~175 °C Tstg Storage temperature -55~175 °C Thermal Characteristics Symbol Parameter Value Unit Min. Typ. Max. Rth(jc) Thermal resistance from junction to case 3.762 K/W
Rev. 2.1 www.basicsemi.com 3 / 7
Electrical Characteristics
Symbol Parameter Test conditions Value Unit Min. Typ. Max. VDC DC blocking voltage Tj=25°C 650 V VF Diode forward voltage IF=2A Tj=25°C IF=2A Tj=175°C 1.40 1.70 V IR Reverse current VR=650V Tj=25°C VR=650V Tj=175°C 0.1 1 μA Symbol Parameter Test conditions Value Unit Min. Typ. Max. QC Total capacitive charge VR=400V Tj=25°C 𝑄𝐶 = ∫ C(V)dV VR 6.8 nC C Total capacitance VR=1V f=1MHz VR=300V f=1MHz VR=600V f=1MHz 11.9 11.8 pF EC Capacitance stored energy VR=400V 1.6 μJ B1D02065E SiC Schottky Diode
Rev. 2.1 www.basicsemi.com 6 / 7 SiC Schottky Diode B1D02065E SYMBOL mm MIN NOM MAX A 2.20 2.30 2.38 A1 0.00 - 0.20 A2 0.90 1.07 1.17 b 0.68 0.78 0.90 b3 5.23 5.33 5.46 c 0.43 0.53 0.61 D 5.98 6.10 6.22 D1 5.30 REF E 6.40 6.60 6.73 E1 4.63 - - e 2.286 BSC H 9.40 10.10 10.50 L 1.38 1.50 1.75 L1 2.90 REF L2 0.51 BSC L3 0.88 - 1.28 L4 0.50 - 1.00 L5 1.65 1.80 1.95 θ 0° - 8° Package Dimensions L5A c H L1 L2 L θ E e b D
Rev. 2.1 www.basicsemi.com 7 / 7 SiC Schottky Diode
Revision History
For further information on technology, delivery terms and conditions and prices, please contact the nearest BASiC Semiconductor Office B1D02065E Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, BASiC semiconductor Ltd. hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. BASiC Semiconductor Ltd. Shenzhen, China © 2020 BASiC Semiconductor Ltd. All Rights Reserved. Document Version Date of Release Description of Changes Rev 1.0 2019-07-23 Release of the datasheet. Rev 2.0 2020-07-06 Characteristics updated. Rev. 2.1 2020-11-02 Characteristics updated.