APM9988QB SINOPWER | Alldatasheet

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  • 20V/8A, RDS(ON)=17.5mW (Max.) @ VGS=4.5V RDS(ON)=18.5mW (Max.) @ VGS=4V RDS(ON)=22mW (Max.) @ VGS=3.1V RDS(ON)=27.5mW (Max.) @ VGS=2.5V
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant) N-Channel MOSFET Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J -STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). Top View of TDFN2x5-6 D (3) (1) (2) (4) (5) (6) D S1 S2 APM9988 Handling Code Temperature Range Package Code Package Code QB : TDFN2x5-6 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (3000ea/reel) Assembly Material G : Halogen and Lead Free Device APM9988 QB : APM9988 XXXXX XXXXX - Lot Code Assembly Material
  • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.

Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2014 www.sinopowersemi.com Absolute Maximum Ratings Symbol Parameter Rating Unit VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±12 V ID Continue Drain Current 8** IDM 300ms Pulsed Drain Current VGS=4.5V A IS Diode continuous forward current 1.5 A TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 TA=25°C 3.5 PD Maximum Power Dissipation TA=85°C 1.8 W RqJA* Thermal Resistance-Junction to Ambient 36 °C/W RqJC* Thermal Resistance-Junction to Case 5.6 °C/W Note：*Surface Mounted on 1in 2 pad area, t £ 10sec. ** Current limited by bond wire. Electrical Characteristics (TA = 25°C Unless Otherwise Noted) APM9988QB Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250mA 20 - - V VDS=16V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - 30 mA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250mA 0.5 0.7 1 V IGSS Gate Leakage Current VGS=±10V, VDS=0V - - ±10 mA VGS=4.5V, IDS=4A 10.5 12.5 17.5 VGS=4V, IDS=4A 11 13 18.5 VGS=3.1V, IDS=4A 11.5 14.5 22 RDS(ON) a Drain-Source On-state Resistance VGS=2.5V, IDS=4A 15 18 27.5 mW Diode Characteristics VSD a Diode Forward Voltage ISD=1.5A, VGS=0V - 0.7 1.3 V trr Reverse Recovery Time - 15 - nS Qrr Reverse Recovery Charge ISD=4A, dISD/dt=100ms - 7 - nC

Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2014 www.sinopowersemi.com Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted) APM9988QB Symbol Parameter Test Conditions Min. Typ. Max. Unit Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 4 - W Ciss Input Capacitance - 950 - Coss Output Capacitance - 175 - Crss Reverse Transfer Capacitance VGS=0V, VDS=10V, Frequency=1.0MHz - 150 - pF td(ON) Turn-on Delay Time - 6 12 tr Turn-on Rise Time - 11 21 td(OFF) Turn-off Delay Time - 48 87 tf Turn-off Fall Time VDD=10V, RL=10W, IDS=1A, VGEN=4.5V, RG=6W - 21 39 ns Gate Charge Characteristics b Qg Total Gate Charge - 13.5 - Qgs Gate-Source Charge - 1.5 - Qgd Gate-Drain Charge VDS=10V, VGS=4.5V, IDS=4A - 4.5 - nC Note a : Pulse test ; pulse width£300ms, duty cycle£2%. Note b : Guaranteed by design, not subject to production testing.

Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2014 www.sinopowersemi.com Typical Operating Characteristics 0 20 40 60 80 100120140160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 TA=25 o C 0 20 40 60 80 100120140160 TA=25 o C,VG=4.5V Power Dissipation Drain Current Safe Operation Area ( TA=25 o C ) Tj - Junction Temperature ( o VDS - Drain-Source Voltage (V) Ptot - Power (W) ID - Drain Current (A) ID - Drain Current (A) Tj - Junction Temperature ( o Safe Operation Area ( TA=60 o C ) VDS - Drain-Source Voltage (V) ID - Drain Current (A) 0.01 0.1 1 10 100 0.01 0.1 100 100ms 300ms 1ms Rds(on) Limit TA=25 o C 10ms 100ms DC 0.01 0.1 1 10 100 0.01 0.1 100 100ms 300ms 1ms Rds(on) Limit TA=60 o C 10ms 100ms DC

Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2014 www.sinopowersemi.com Typical Operating Characteristics (Cont.) 1.5V 0 5 10 15 20 25 30 VGS=4V VGS=3.1V VGS=2.5V VGS=4.5V 1 2 3 4 5 6 7 8 9 10 IDs=4A Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) ID - Drain Current (A) VGS - Gate-Source Voltage (V) Gate-Source On Resistance RDS(ON) - On Resistance (m W) ID - Drain Current (A)RDS(ON) - On Resistance (m W) 1E-4 1E-3 0.01 0.1 1 1030 1E-3 0.01 0.1 Mounted on 1in pad RqJA : 36 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5 Thermal Transient Impedance Square Wave Pulse Duration (sec) Normalized Effective Transient

Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2014 www.sinopowersemi.com Typical Operating Characteristics (Cont.) -50 -25 0 25 50 75 100125150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 RON@Tj=25 o C: 12.5mW VGS= 4.5V IDS = 4A 0 4 8 12 16 20 150 300 450 600 750 900 1050 1200 1350 1500 Frequency=1MHz Crss Coss Ciss Drain-Source On Resistance Capacitance VDS - Drain-Source Voltage (V) Normalized On ResistanceC - Capacitance (nC) Tj - Junction Temperature ( o -50 -25 0 25 50 75 100125150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS =250mA Gate Threshold Voltage Tj - Junction Temperature ( o 0.1 Tj=150 o C Tj=25 o C Source-Drain Diode Forward VSD - Source-Drain Voltage (V) IS - Source Current (A) Normalized Threshold Voltage

Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2014 www.sinopowersemi.com 0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VDS=10V IDS=4A Gate Charge QG - Gate Charge (nC) Typical Operating Characteristics (Cont.) VGS - Gate-Source Voltage (V)

Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2014 www.sinopowersemi.com Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10%

Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2014 www.sinopowersemi.com

Package Information

UNIT: mm D E A E2 L be 0.70 0.028 0.002 0.50 BSC 0.020 BSC 1.90 2.10 0.075 0.083 4.80 5.20 0.189 0.205 0.10 0.20 0.004 0.008 4.40 4.60 0.173 0.181E1 S Y M B O L MIN. MAX. 0.80 0.00 0.20 0.30 0.05 A b D E e L MILLIMETERS TDFN2x5-6 0.40 0.60 MIN. MAX. INCHES 0.031 0.000 0.008 0.012 0.016 0.024 D1 1.30 1.55 0.051 0.061 E2 2.60 2.95 0.102 0.116 0.6 0.5 1.8 2.77 0.57 0.25

Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2014 www.sinopowersemi.com Carrier Tape & Reel Dimensions Application A H T1 C d D W E1 F -0.00 13.0+0.50 -0.20 P0 P1 P2 D0 D1 T A0 B0 K0 TDFN2x5-6 (mm) H A d A AB W F T P0OD0 B SECTION B-B SECTION A-A OD1

Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - March, 2014 www.sinopowersemi.com Taping Direction Information TDFN2x5-6 Classification Profile USER DIRECTION OF FEED

Copyright ã Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.