APM4500AK SINOPWER | Alldatasheet

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Technical content

Features

Applications

  • Power Management in Notebook Computer, Pin Description Ordering and Marking Information N-Channel
  • N-Channel 20V/8A, RDS(ON) =22mW(typ.) @ VGS = 4.5V RDS(ON) =30mW(typ.) @ VGS = 2.5V
  • P-Channel -20V/-4.3A, RDS(ON) =80mW(typ.) @ VGS =-4.5V RDS(ON) =105mW(typ.) @ VGS =-2.5V
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant) P-Channel Top View of SOP - 8 Portable Equipment and Battery Powered Systems. APM4500A Handling Code Temp. Range Package Code APM4500A K : APM4500A XXXXX XXXXX - Lot Code Assembly Material Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150 C Handling Code TR : Tape & Reel (2500ea/reel) Assembly Material L : Lead Free Device G : Halogen and Lead Free Device D1 D1 (8) (7) (2) (1) D2 D2 (6) (5) (4) (3) Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

www.sinopowersemi.com2 APM4500AK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - May, 2014 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter N Channel P Channel Unit VDSS Drain-Source Voltage 20 -20 VGSS Gate-Source Voltage ±12 ±12 V ID* Continuous Drain Current 8 -4.3 IDM* Pulsed Drain Current VGS=10V(N) VGS=-10V(P) 30 -16 A IS* Diode Continuous Forward Current 2.5 -2 A TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 TA=25°C 2 PD* Power Dissipation TA=100°C 0.8 W RqJA* Thermal Resistance-Junction to Ambient 62.5 °C/W Note: *Surface Mounted on 1in 2 pad area, t £ 10sec. APM4500AK Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics VGS=0V, IDS=250mA N-Ch 20 - - BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250mA P-Ch -20 - - V VDS=16V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current TJ=85°C N-Ch - - 30 VDS=-16V, VGS=0V - - -1 IDSS Zero Gate Voltage Drain Current TJ=85°C P-Ch - - -30 mA VDS=VGS, IDS=250mA N-Ch 0.5 0.7 1 VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250mA P-Ch -0.5 -0.75 -1 V N-Ch - - ±10 IGSS Gate Leakage Current VGS=±10V, VDS=0V P-Ch - - ±10 mA VGS=4.5V, IDS=8A N-Ch - 22 26 VGS=-4.5V, IDS=-4.3A P-Ch - 80 90 VGS=2.5V, IDS=5.2A N-Ch - 30 36 RDS(ON) a Drain-Source On-State Resistance VGS=-2.5V, IDS=-2A P-Ch - 105 115 mW

www.sinopowersemi.com3 APM4500AK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - May, 2014 Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted) APM4500AK Symbol Parameter Test Conditions Min. Typ. Max. Unit Diode Characteristics ISD=2.5A, VGS=0V N-Ch - 0.8 1.3 VSD a Diode Forward Voltage ISD=-2A, VGS=0V P-Ch - -0.7 -1.3 V N-Ch - 15 - trr Reverse Recovery Time P-Ch - 22 - ns N-Ch - 7 - qrr Reverse Recovery Charge N-Channel ISD=-8A, dlSD/dt =100A/µs P-Channel ISD =-4.3A, dlSD/dt =100A/µs P-Ch - 6 - nC Dynamic Characteristics b N-Ch - 4 - RG Gate Resistance VGS=0V,VDS =0V,F=1MHz P-Ch - 9 - W N-Ch - 740 - Ciss Input Capacitance P-Ch - 565 - N-Ch - 160 - Coss Output Capacitance P-Ch - 125 - N-Ch - 125 - Crss Reverse Transfer Capacitance N-Channel VGS=0V, VDS=10V, Frequency=1.0MHz P-Channel VGS=0V, VDS=-10V, Frequency=1.0MHz P-Ch - 95 - pF N-Ch - 5 10 td(ON) Turn-on Delay Time P-Ch - 6 12 N-Ch - 11 21 tr Turn-on Rise Time P-Ch - 13 24 N-Ch - 40 73 td(OFF) Turn-off Delay Time P-Ch - 34 62 N-Ch - 23 42 tf Turn-off Fall Time N-Channel VDD=10V, RL=10W, IDS=1A, VGEN=4.5V, RG=6W P-Channel VDD=-10V, RL=10W, IDS=-1A, VGEN =-4.5V, RG=6W P-Ch - 32 59 ns Gate Charge Characteristics b N-Ch - 10 13 Qg Total Gate Charge P-Ch - 6 8 N-Ch - 1 - Qgs Gate-Source Charge P-Ch - 1 - N-Ch - 4 - Qgd Gate-Drain Charge N-Channel VDS=10V, VGS=4.5V, IDS=8A P-Channel VDS=-10V, VGS=-4.5V, IDS=-4.3A P-Ch - 2.2 - nC Notes: a : Pulse test ; pulse width £300ms, duty cycle £2%. b : Guaranteed by design, not subject to production testing.

www.sinopowersemi.com4 APM4500AK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - May, 2014 Typical Characteristics ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) ID - Drain Current (A) N-Channel Normalized Transient Thermal Resistance 0 20 40 60 80 100120140160 0.0 0.5 1.0 1.5 2.0 2.5 TA=25 o C 0 20 40 60 80 100120140160 TA=25 o C,VG=4.5V 0.01 0.1 1 10 100 0.01 0.1 100 Rds(on) Limit TA=25 O C 10ms 300ms 1ms 100ms DC 1E-4 1E-3 0.01 0.1 1 1030 1E-3 0.01 0.1 Mounted on 1in pad RqJA : 62.5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com5 APM4500AK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - May, 2014 RDS(ON) - On - Resistance (mW) Drain-Source On Resistance ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage VDS - Drain-Source Voltage (V) ID - Drain Current (A) Output Characteristics Gate-Source On Resistance VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mW) Normalized Threshold Voltage Typical Characteristics (Cont.) N-Channel 1 2 3 4 5 6 7 8 9 10 ID=8A 2.5V 1.5V 0 4 8 12 16 20 VGS=4.5V VGS=2.5V -50 -25 0 25 50 75 100125150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS=250mA

www.sinopowersemi.com6 APM4500AK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - May, 2014 VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) C - Capacitance (pF) VSD - Source - Drain Voltage (V) Source-Drain Diode Forward IS - Source Current (A) Capacitance Gate Charge QG - Gate Charge (nC) VGS - Gate - source Voltage (V) Typical Characteristics (Cont.) N-Channel -50 -25 0 25 50 75 100125150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VGS = 4.5V IDS = 8A RON@Tj=25 o C: 22mW 0.1 Tj=150 o C Tj=25 o C 0 4 8 12 16 20 100 200 300 400 500 600 700 800 900 1000 1100 1200 Frequency=1MHz Crss Coss Ciss 0 4 8 12 16 20 VDS=10V IDS=8A

www.sinopowersemi.com7 APM4500AK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - May, 2014 Typical Characteristics (Cont.) Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) -ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area -VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) -ID - Drain Current (A) P-Channel Normalized Transient Thermal Resistance 0 20 40 60 80 100120140160 0.0 0.5 1.0 1.5 2.0 2.5 TA=25 o C 0 20 40 60 80 100120140160 TA=25 o C,VG=-4.5V 0.01 0.1 1 10 100 0.01 0.1 100 Rds(on) Limit TA=25 O C 10ms 1ms 100ms DC 1E-4 1E-3 0.01 0.1 1 1030 1E-3 0.01 0.1 Mounted on 1in pad RqJA : 62.5 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com8 APM4500AK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - May, 2014 Typical Characteristics (Cont.) RDS(ON) - On - Resistance (mW) Drain-Source On Resistance -ID - Drain Current (A)-VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Output Characteristics Tj - Junction Temperature (°C) Gate Threshold VoltageGate-Source On Resistance -VGS - Gate - Source Voltage (V) RDS(ON) - On - Resistance (mW) Normalized Threshold Voltage P-Channel -3V -2V -1.5V 0 4 8 12 16 20 100 120 140 160 180 200 VGS= -2.5V VGS= -4.5V 1 2 3 4 5 6 7 8 9 10 100 120 140 160 ID= -4.3A -50 -25 0 25 50 75 100125150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IDS= -250mA

www.sinopowersemi.com9 APM4500AK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - May, 2014 Typical Characteristics (Cont.) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V) Source-Drain Diode Forward -IS - Source Current (A) -VDS - Drain - Source Voltage (V) C - Capacitance (pF) Capacitance Gate Charge QG - Gate Charge (nC) -VGS - Gate - source Voltage (V) P-Channel 0.1 Tj=150 o C Tj=25 o C 0 4 8 12 16 20 100 200 300 400 500 600 700 800 Frequency=1MHz Crss Coss Ciss 0 2 4 6 8 10 12 VDS= -10V IDS= -4.3A -50 -25 0 25 50 75 100125150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VGS = -4.5V IDS = -4.3A RON@Tj=25 o C: 80mW

www.sinopowersemi.com10 APM4500AK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - May, 2014 Avalanche Test Circuit and Waveforms DUT 0.01W tp VDD VDS L IL RG EAS VDD tAV IAS VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDD RD DUT VGS VDS RG tp td(on) tr td(off) tf VGS VDS 90% 10% EAS VDD tAV IAS VDS tp VDSX(SUS) DUT 0.01W VDD VDS L IL RG tp td(on) tr td(off) tf VGS VDS 90% 10% VDD RD DUT VGS VDS RG tp N Channel P Channel N Channel P Channel

www.sinopowersemi.com11 APM4500AK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - May, 2014

Package Information

UNIT: mm A A1 A2 L VIEW A 0.25 SEATING PLANE GAUGE PLANE 1.27 5.74 2.2 2.87 0.635 0.8 D e E b SEE VIEW A c h X 45 SEATING PLANE < 4 mils-T- Note: 1. Follow JEDEC MS-012 AA. 2. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension “E” does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side. SYMBOL MIN. MAX. 1.75 0.10 0.17 0.25 0.25 A c D E e h L MILLIMETERS b 0.31 0.51 SOP-8 0.25 0.50 0.40 1.27 MIN. MAX. INCHES 0.069 0.004 0.012 0.020 0.007 0.010 0.010 0.020 0.016 0.050 0.010 1.27 BSC 0.050 BSC A2 1.25 0.049 0 8 0 8 3.80 5.80 4.80 4.00 6.20 5.00 0.189 0.197 0.228 0.244 0.150 0.157 - -

www.sinopowersemi.com12 APM4500AK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - May, 2014 Carrier Tape & Reel Dimensions Application A H T1 C d D W E1 F -0.00 13.0+0.50 -0.20 P0 P1 P2 D0 D1 T A0 B0 K0 SOP- 8 (mm) H A d A AB W F T P0OD0 B SECTION B-B SECTION A-A OD1

www.sinopowersemi.com13 APM4500AK Copyright ã Sinopower Semiconductor, Inc. Rev. A.4 - May, 2014 Taping Direction Information SOP-8 USER DIRECTION OF FEED Classification Profile

Copyright ã Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.