APM2315A SINOPWER | Alldatasheet

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  • Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems Pin Description Ordering and Marking Information Top View of SOT-23-3 P-Channel MOSFET
  • -20V/-4A, RDS(ON)=35mW (typ.) @ VGS=-4.5V RDS(ON)=45mW (typ.) @ VGS=-2.5V RDS(ON)=60mW (typ.) @ VGS=-1.8V
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant) G S D APM2315 Handling Code Temperature Range Package Code Package Code A : SOT-23-3 Operating Junction Temperature Range C : -55 to 150 oC Handling Code TR : Tape & Reel (3000ea/reel) Assembly Material G : Halogen and Lead Free Device APM2315 A : 115XX XX - Lot Code Assembly Material D G S Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead- free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

www.sinopowersemi.com2 APM2315A Copyright ã Sinopower Semiconductor, Inc. Rev. B.3 - June, 2014 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±12 V ID* Continuous Drain Current -4 IDM* Pulsed Drain Current VGS=-4.5V -16 A IS* Diode Continuous Forward Current -1.5 A TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 TA=25°C 0.83 PD* Maximum Power Dissipation TA=100°C 0.3 W RqJA* Thermal Resistance-Junction to Ambient 150 °C/W Note : *Surface Mounted on 1in2 pad area, t £ 10sec. APM2315A Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250mA -20 - - V VDS=-16V, V GS=0V - - -1 IDSS Zero Gate Voltage Drain Current TJ=85°C - - -30 mA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250mA -0.5 -0.7 -1 V IGSS Gate Leakage Current VGS=±10V, VDS=0V - - ±100 nA VGS=-4.5V, IDS=-4A - 35 55 VGS=-2.5V, IDS=-2.5A - 45 72 RDS(ON) a Drain-Source On-state Resistance VGS=-1.8V, IDS=-2A - 60 100 mW VSD a Diode Forward Voltage ISD=-0.5A, VGS=0V - -0.75 -1.3 V Gate Charge Characteristics b Qg Total Gate Charge - 12 16 Qgs Gate-Source Charge - 2.1 - Qgd Gate-Drain Charge VDS=-10V, V GS=-4.5V, IDS=-4A - 2.9 - nC

www.sinopowersemi.com3 APM2315A Copyright ã Sinopower Semiconductor, Inc. Rev. B.3 - June, 2014 Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted) APM2315A Symbol Parameter Test Conditions Min. Typ. Max. Unit Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 8 - W Ciss Input Capacitance - 1135 - Coss Output Capacitance - 200 - Crss Reverse Transfer Capacitance VGS=0V, VDS=-15V, Frequency=1.0MHz - 110 - pF td(ON) Turn-on Delay Time - 6 12 Tr Turn-on Rise Time - 7 14 td(OFF) Turn-off Delay Time - 72 131 Tf Turn-off Fall Time VDD=-10V, RL=10W, IDS=-1A, VGEN=-4.5V, RG=6W - 45 82 ns Note a : Pulse test ; pulse width£300ms, duty cycle£2%. Note b : Guaranteed by design, not subject to production testing.

www.sinopowersemi.com4 APM2315A Copyright ã Sinopower Semiconductor, Inc. Rev. B.3 - June, 2014 Typical Operating Characteristics -ID - Drain Current (A) Drain Current Tj - Junction Temperature (°C) Safe Operation Area -VDS - Drain - Source Voltage (V) Thermal Transient Impedance Square Wave Pulse Duration (sec) Power Dissipation Ptot - Power (W) Tj - Junction Temperature (°C) -ID - Drain Current (A) Normalized Transient Thermal Resistance 0 20 40 60 80 100120140160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TA=25 o C 0 20 40 60 80 100120140160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 TA=25 o C,VG=-4.5V 0.01 0.1 1 10 100 0.01 0.1 Rds(on) Limit TA=25 o C 10ms 300ms 1ms 100ms DC 1E-41E-3 0.01 0.1 1 10 100 1E-3 0.01 0.1 Mounted on 1in pad RqJA : 150 o C/W 0.01 0.02 0.05 0.1 0.2 Single Pulse Duty = 0.5

www.sinopowersemi.com5 APM2315A Copyright ã Sinopower Semiconductor, Inc. Rev. B.3 - June, 2014 RDS(ON) - On - Resistance (mW) Drain-Source On Resistance -ID - Drain Current (A) Tj - Junction Temperature (°C) Gate Threshold Voltage -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Output Characteristics Transfer Characteristics -VGS - Gate - Source Voltage (V) -ID - Drain Current (A) Normalized Threshold Voltage Typical Operating Characteristics (Cont.) -2V -1.5V 0 4 8 12 16 20 100 120 140 160 VGS= -1.8V VGS= -2.5V VGS= -4.5V Tj=125 o C Tj=25 o C Tj=-55 o C -50 -25 0 25 50 75 100125150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IDS = -250mA

www.sinopowersemi.com6 APM2315A Copyright ã Sinopower Semiconductor, Inc. Rev. B.3 - June, 2014 -VDS - Drain - Source Voltage (V) Drain-Source On Resistance Normalized On Resistance Tj - Junction Temperature (°C) C - Capacitance (pF) -VSD - Source - Drain Voltage (V) Source-Drain Diode Forward -IS - Source Current (A) Capacitance Gate Charge QG - Gate Charge (nC) -VGS - Gate - source Voltage (V) Typical Operating Characteristics (Cont.) -50 -25 0 25 50 75 100125150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 RON@Tj=25 o C: 35mW VGS = -4.5V IDS = -4A 0.1 Tj=150 o C Tj=25 o C 0 4 8 12 16 20 200 400 600 800 1000 1200 1400 1600 1800 Frequency=1MHz Crss Coss Ciss 0 5 10 15 20 25 VDS= -10V ID = -4A

www.sinopowersemi.com7 APM2315A Copyright ã Sinopower Semiconductor, Inc. Rev. B.3 - June, 2014 Avalanche Test Circuit and Waveforms EAS VDD tAV IAS VDS tp VDSX(SUS) DUT 0.01W VDD VDS L IL RG tp Switching Time Test Circuit and Waveforms td(on) tr td(off) tf VGS VDS 90% 10% VDD RD DUT VGS VDS RG tp

www.sinopowersemi.com8 APM2315A Copyright ã Sinopower Semiconductor, Inc. Rev. B.3 - June, 2014

Package Information

L VIEW A 0.25 GAUGE PLANE SEATING PLANE A A2A1 e D E SEE VIEW A b c SEATING PLANE < 4 mils-T- MAX. 0.047 0.044 0.024 0.003 0.009 0.0200.012 L 0.30 e E D c b 0.08 0.30 0.60 0.012

0.95 BSC

1.90 BSC

0.22 0.50

0.037 BSC

0.075 BSC

0.003 MIN. MILLIMETERS SYMBOL A 0.00 0.90 SOT-23-3 MAX. 1.20 0.08 1.12 MIN. 0.000 0.035 INCHES °8°0 °8°0 1.40 2.60 1.80 3.00 2.70 3.10 0.122 0.071 0.1180.102 0.055 0.106 Note : Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil per side. UNIT: mm 2.4 0.95 0.8 0.8

www.sinopowersemi.com9 APM2315A Copyright ã Sinopower Semiconductor, Inc. Rev. B.3 - June, 2014 Carrier Tape & Reel Dimensions A AB W F T P0OD0 B SECTION B-B SECTION A-A OD1 H A d Application A H T1 C d D W E1 F -0.00 13.0+0.50 -0.20 P0 P1 P2 D0 D1 T A0 B0 K0 SOT-23-3 (mm)

www.sinopowersemi.com10 APM2315A Copyright ã Sinopower Semiconductor, Inc. Rev. B.3 - June, 2014 Taping Direction Information SOT-23-3 USER DIRECTION OF FEED Classification Profile

Copyright ã Sinopower Semiconductor, Inc. (Tsmax to TP) 3 °C/second max. 3°C/second max. Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max.

  • Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Table 2. Pb-free Process – Classification Temperatures (Tc) Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Sinopower Semiconductor, Inc.