AP4435GJ VBSEMI | Alldatasheet

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Technical content

P-Channel 30-V (D-S) MOSFET

FEATURES

  • Halogen-free According to IEC 61249-2-21 Definition T r e n c h F E T® Power MOSFET  100 % Rg Tested

APPLICATIONS

 Load Switch  Battery Switch PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d Qg (Typ.) - 30 0.018 at VGS = - 10 V - 40 13 nC 0.022 at VGS = - 4.5 V - 35 Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 95 °C/W. d. Based on T C = 25 °C. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless ot herwise noted Parameter Symbol Limit Unit Dr ain-Source Voltage VDS - 30 VGate-Source Voltage VGS ± 20 Continuous Drain Curren t (TJ = 150 °C) TC = 25 °C ID - 40 A TC = 70 °C - 35 TA = 25 °C - 30.0a, b TA = 70 °C - 28 a, b Pulsed Drain Current IDM - 150 Continuous Source-Drain Diode Current TC = 25 °C IS - 3.5 TA = 25 °C - 2.1a, b Maximum Powe r Dissipation TC = 25 °C PD WTC = 70 °C 32 TA = 25 °C 2.5a, b TA = 70 °C 1.6a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maxim um Junction-to-Ambienta, c t ≤ 10 s RthJA 40 50 °C/WMaximum Junction-to-Foot Steady State RthJF 24 30 TO-251 SDG Top View S G D P-Channel MOSFET www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP4435GJ A ll data sheet.com

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Abso lute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless ot herwise noted Parameter Symbol Test Cond itions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient ΔVDS/TJ ID = - 250 µA - 31 mV/°CVGS(th) Temperature Coefficient ΔVGS(th)/TJ 4.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µAVDS = - 30 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) VDS ≤ - 5 V, VGS = - 10 V - 20 A Drain-Source On-State Resistancea RDS(on) Forward Transconductancea gfs VDS = - 15 V, ID = - 7.0 A 18 S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 1455 pFOutput Capacitance Coss 180 Reverse Transfer Capacitance Crss 145 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 7.0 A 25 38 nCVDS = - 15 V, VGS = - 4.5 V, ID = - 7.0 A 13 20 Gate-Source Charge Qgs 3.5 Gate-Drain Charge Qgd 5.5 Gate Resistance Rg f = 1 MHz 0.4 2.0 4.0 Ω Tur n-On De lay Time td(on) VDD = - 15 V, RL = 2.7 Ω ID ≅ - 5.6 A, VGEN = - 10 V, Rg = 1 Ω 10 20 ns Rise Time tr 13 20 Turn-Off DelayTime td(off) 23 35 Fall Time tf 91 8 Tur n-On Del ay Time td(on) VDD = - 15 V, RL = 2.7 Ω ID ≅ - 5.6 A, VGEN = - 4.5 V, Rg = 1 Ω 38 57 Rise Time tr 89 134 Turn-Off DelayTime td(off) 22 33 Fall Time tf 11 17 Drain-Source Body Diode Ch aracteristics Continous Source-Drain Diode Current I S TC = 25 °C - 6.5 APulse Diode Forward Current ISM - 30 Body Diode Voltage VSD IS = - 5.6 A, VGS = 0 V - 0.71 - 1.2 V Body Diode Reverse Recove ry Time t rr IF = - 5.6 A, dI/dt = 100 A/µs, TJ = 25 °C 22 33 ns Body Diode Reverse Recovery C harge Q rr 17 26 nC Reverse Recovery Fall Time ta 13 nsReverse Recovery Rise T ime tb 9 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP4435GJ A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C , unless otherwise noted Output Characteristics On-Resistan ce vs. Drain Current Gate Charge 012345 VDS - Drain-to-Source Voltage (V - Drain Current (A)ID VGS =1 0V thr u 4 V VGS =3 V VGS =1 V,2 V 0.010 0.015 0.020 0.025 0.030 0.035 0 5 10 15 20 25 30 - On-Resistance (Ω)RDS(on) ID - Drain Current (A) VGS =1 0V VGS =4 . 5V 048 12 16 20 24 - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS ID =7A VDS =1 5 V VDS =2 4V Transfer Characteristics Capacitance On-Resistance vs. Ju nction Temperature 0.0 0.8 1.6 2.4 3.2 4.0 VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID TC = 25 °C TC = 125 °C TC = - 55 °C Crss 300 600 900 1200 1500 1800 0 6 12 18 24 30 Ciss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 TJ -J unction Temperature (°C) (Normalized) - On-ResistanceRDS(on) VGS = - 4.5 V,I D =-7A VGS =-1 0 V,I D =-5 . 6A www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP4435GJ A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless o therwise noted Source-Drain Diode Forward Voltage Thres hold Voltage 0.1 100 TJ = 150 °C VSD -S ource-to-Drain Voltage (V) - Source Current (A)IS TJ = 25 °C 1.1 1.3 1.5 1.7 1.9 2.1 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA (V)VGS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to -Ambient 0.00 0.01 0.02 0.03 0.04 0.05 04 8 12 16 20 - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID =7A 0.001 0.01 0.1 1 10 100 Time (s) Power ( W) Safe Operating Area VDS - Drain-to-Source Voltage (V * VGS > minimu m VGS at which RDS(on) is specified 100 0.1 1 10 100 0.01 ID - Drain Current (A) 0.1 TA =2 5 ° C Single Pulse 100 ms 10 s DC Limited byR DS(on)* BVDSS Limited 10 ms 1m s www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP4435GJ A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C , unless otherwise noted * The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resi stance, and is more u s eful in settling the upper dissipation limit f or cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 T C - Case Temperature (°C) ID - Drain Current (A) Power, Junction-to-Foot 0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Power Derating, Junction- to-Ambient 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 T A -A mbient Temperature (°C) Power (W) www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP4435GJ A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless o therwise noted Normalized Thermal Transient Impedance, Junction -to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 75 °C/W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 Normalized Thermal Transient Impedance, Junction-to -Foot 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0.5 Squ are WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Single Pulse 0.02 0.05 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP4435GJ A ll data sheet.com

Note: Dimension L3 is for reference only. b e L3 L1 L D c AE /C0084/C0079/C0262/C0050/C0053/C0049/C0065/C0065/C0032/C0040/C0068/C0080/C0065/C0075/C0041 /C0077/C0073/C0076/C0076/C0073/C0077/C0069/C0084/C0069/C0082/C0083/C0073/C0078/C0067/C0072/C0069/C0083 Dim Min Max Min Max A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 b 0.71 0.89 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.43 0.206 0.214 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 E 6.48 6.73 0.255 0.265 e 2.28 BSC 0.090 BSC L 3.89 9.53 0.153 0.375 L1 1.91 2.28 0.075 0.090 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.045 0.060 ECN: S-03946—Rev. E, 09-Jul-01 DWG: 5346 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP4435GJ A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP4435GJ A ll data sheet.com