AP2852GO

AP2852GO VBSEMI | Alldatasheet

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▼ Simple Drive Requirement N-CH BV DSS 30V ▼ Lower Gate Charge RDS(ON) 22mΩ ▼ Fast Switching Performance ID 6.2A ▼ RoHS Compliant & Halogen-Free P-CH BV DSS -30V RDS(ON) 45mΩ ID -5.0A Absolute Maximum Ratings Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage +20 + 20 V ID@TA=25℃ Continuous Drain Current3 6.2 -5.0 A ID@TA=70℃ Continuous Drain Current3 5.0 -4.0 A IDM Pulsed Drain Current1 20 -18 A PD@TA=25℃ Total Power Dissipation W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient3 90 ℃/W Parameter Thermal Data 1.35 N- and P-Channel 60-V (D-S) MOSFET www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP2852GO A ll data sheet.com

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=6A - 23 - mΩ VGS=4.5V, ID=4A - 30 - mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=6A - 14 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 1 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge ID=6A - 7 11 nC Qgs Gate-Source Charge VDS=15V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=4.5V - 4 - nC td(on) Turn-on Delay Time VDS=15V - 6 - ns tr Rise Time ID=1A - 6 - ns td(off) Turn-off Delay Time RG=3.3Ω -1 7- ns tf Fall Time VGS=10V - 4 - ns Ciss Input Capacitance VGS=0V - 550 - pF Coss Output Capacitance VDS=15V - 105 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 90 - pF Rg Gate Resistance f=1.0MHz - 1.7 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=1.2A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=6A, VGS=0V, - 15 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 7 - nC www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP2852GO A ll data sheet.com

Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-5A - 45 - mΩ VGS=-4.5V, ID=-3A - 66 - mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-5A - 18 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -1 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge ID=-5A - 14.4 23 nC Qgs Gate-Source Charge VDS=-15V - 5.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 5 - nC td(on) Turn-on Delay Time VDS=-15V - 7 - ns tr Rise Time ID=-1A - 6.5 - ns td(off) Turn-off Delay Time RG=3.3Ω -3 6- ns tf Fall Time VGS=-10V - 28 - ns Ciss Input Capacitance VGS=0V - 960 - pF Coss Output Capacitance VDS=-15V - 190 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 170 - pF Rg Gate Resistance f=1.0MHz - 6 - Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-1.2A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-5A, VGS=0V, - 19 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in 2 copper pad of FR4 board , t <10sec ; 208℃/W when mounted on min. copper pad. www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP2852GO A ll data sheet.com

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 -30 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 01 2345678 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =25 ℃ 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =150 ℃ 2468 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON0 (m I D = 4A T A = 25 o C 0.6 1.0 1.4 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =6A V G =10V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) (V) I D =1mA 10V 7.0V 6.0V 5.0V V G =4.0V 10V 7.0V 6.0V 5.0V V G =4.0V www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP2852GO A ll data sheet.com

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 30 -30 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 0 4 8 12 16 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =6A V DS =1 5V 200 400 600 800 1000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz 0.01 0.1 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=208oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse C oss C rss C iss 02468 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =5V Operation in this area limited by RDS(ON) www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP2852GO A ll data sheet.com

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 -30 Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 01 234 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =25 o C -1 0V - 7.0 V - 6.0 V - 5.0 V V G = - 4.0 V 012 345 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150 o C -10V -7.0V -6.0V -5.0V V G = - 4.0 V 2468 1 0 -V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D = -3 A T A =25 o C 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -5 A V G = - 10V 0 0.4 0.8 1.2 1.6 -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized -VGS(th) (V) I D = -1mA www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP2852GO A ll data sheet.com

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 30 -30 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q VG -4.5V QGS QGD QG Charge 0 8 16 24 32 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D = -5A V DS = -15V 400 800 1200 1600 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.01 0.1 100 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R thja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=208oC/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 012345 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o CT j =25 o C V DS = -5V Operation in this area limited by RDS(ON) www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP2852GO A ll data sheet.com

E C R 0.10 (4 Corners) B R 0.10 Corners) A D L /C0111K1 0.25 (Gage Plane) e /C0084/C0083/C0083/C0079/C0080/C0058/C0032/C0032/C0032/C0032/C0056/C0262/C0076/C0069/C0065/C0068 JEDEC Part Number: MO-153 /C0077/C0073/C0076/C0076/C0073/C0077/C0069/C0084/C0069/C0082/C0083 Dim Min Nom Max A – – 1.20 A 1 0.05 0.10 0.15 A 2 0.80 1.00 1.05 B 0.19 0.28 0.30 C – 0.127 – D 2.90 3.00 3.10 E 6.20 6.40 6.60 E1 4.30 4.40 4.50 e – 0.65 – L 0.45 0.60 0.75 L1 0.90 1.00 1.10 Y – – 0.10 /C0111K1 0/C0095 3/C0095 6/C0095 ECN: S-03946—Rev. G, 09-Jul-01 DWG: 5844 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP2852GO A ll data sheet.com

All products due to improve re liability, function or design or for o ther reasons, p roduct specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. S tatement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. P arameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's t echnical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be oHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw ) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP2852GO A ll data sheet.com