AP2306GN VBSEMI | Alldatasheet

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Technical content

N-Channel 20 V (D-S) MOSFET

FEATURES

  • Halogen-free According to IEC 61249-2-21 Definition  T renchFET® Power MOSFET  100 % R g Tested  Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

 DC/DC Converters  Load Switch for Portable VDS (V) RDS(on) (Ω) ID (A)e Qg (Typ.) 0.028 at VGS = 4.5 V 6a 8.8 nC0.042 at VGS = 2.5 V 6a 0.050 at VGS = 1.8 V 5.6 G S D Top View SOT-23 Notes: a. Package limited b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s . Maximum under steady state conditions is 125 °C/W. e. Based on T C = 25 °C. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless othe rwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 VGate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID A TC = 70 °C 5.1 TA = 25 °C 5b, c TA = 70 °C 4b, c Pulsed Drain Current IDM 20 Continuous Source-Drain Diode Current TC = 25 °C IS 1.75 TA = 25 °C 1.04b, c Maximum Power Dissi pation TC = 25 °C PD 2.1 WTC = 70 °C 1.3 TA = 25 °C 1.25b, c TA = 70 °C 0.8b, c Operating Junction and Storage Te mperature Range TJ, Tstg - 55 to 150 °CSoldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maxim um Junction-to-Ambientb, d t ≤ 5 s R thJA 80 100 °C/WMaximum Junction-to-Foot (Drain) S teady State R thJF 40 60 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP2306GN A ll data sheet.com

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Abso lute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise no ted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA 25 mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 2.6 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 0.45 1.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µA VDS = 20 V, VGS = 0 V, TJ = 70 °C 10 On-State Drain Currenta ID(on) VDS ≤ 5 V, VGS = 4.5 V 20 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 5.0 A 0.028 ΩVGS = 2.5 V, ID = 4.7 A 0.042 VGS = 1.8 V, ID = 4.3 A 0.050 Forward Transconductancea gfs VDS = 10 V, ID = 5.0 A 24 S Dynamicb Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 865 pFOutput Capacitance Coss 105 Reverse Transfer Capacitance Crss 55 Total Gate Charge Qg VDS = 10 V, VGS = 5 V, ID = 5.0 A 12 18 nC VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 8.8 14 Gate-Source Charge Qgs 1.1 Gate-Drain Charge Qgd 0.7 Gate Resistance Rg f = 1 MHz 0.5 2.4 4.8 Ω Tur n-On De lay Time td(on) VDD = 10 V, RL = 2.2 Ω ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω 81 6 ns Rise Time tr 17 26 Turn-Off Delay Time td(off) 31 47 Fall Time tf 81 6 Tur n-On Del ay Time td(on) VDD = 10 V, RL = 2.2 Ω ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω 51 0 Rise Time tr 13 20 Turn-Off Delay Time td(off) 21 32 Fall Time tf 61 2 Drain-Source Body Diode Ch aracteristics Continuous Source-Drain Diode Current IS TC = 25 °C 1.75 A Pulse Diode Forward Current ISM 20 Body Diode Voltage VSD IS = 4 A, VGS = 0 V 0.75 1.2 V Body Diode Reverse Recovery Time trr IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C 12 20 ns Body Diode Reverse Recovery C harge Qrr 51 0 n C Reverse Recover y Fall Time ta 7 ns Reverse Recovery Rise Time tb 5 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP2306GN A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C , unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Ch arge VGS =10Vthru3V VGS =2.5V VGS =1V VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D 0.020 0.025 0.030 0.035 0.040 0.045 0 5 10 15 20 VGS =1 . 8V VGS =4 .5 V VGS =2 . 5V - On-Resistance (Ω)R DS(on) ID - Drain Current (A) 02468 1 0 VDS =1 6V ID =5A VDS =1 0V VDS =5V - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature TC = 25 °C TC =1 2 5 ° C TC = - 55 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D Crss0 300 600 900 1200 0 5 10 15 20 Ciss Coss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.70 0.95 1.20 1.45 1.70 - 50 - 25 0 25 50 75 100 125 150 VGS = 2.5 V, I = 4.7 A VGS =4 . 5V ,ID =5 A TJ - Junction Temperature (°C) (Normalized) - On-ResistanceRDS(on) D www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP2306GN A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless o therwise noted Source-Drain Diode Forward Voltage Thresh old Voltage 0.1 100 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)I S 0.1 0.3 0.5 0.7 0.9 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA (V) VGS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (J unction-to-Ambient) 0.02 0.03 0.04 0.05 0.06 02468 TJ =2 5 ° C ID =5A TJ = 125 °C - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source Voltage (V) 0.001 0.01 0.1 1 10 100 Time (s) Power (W) Safe Operating Area, Junction-to-Ambient 100 0.1 1 10 100 0.01 0.1 TA = 25 °C Single Pulse 100 ms Limited by RDS(on)* BVDSS Limited 1m s 100 μs 10 ms 1s ,1 0s DC VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified - Drain Current (A)ID www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP2306GN A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C , unless otherwise noted * The power dissipation P D is based on T J(max.) = 150 °C, using junction-to-cas e thermal resistance, and is mo re useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0.0 1.5 3.0 4.5 6.0 7.5 0 2 55 07 5 1 0 0 1 2 5 1 5 0 Package Limited TC - Case Temperature (°C) I D - Drain Current (A) Power Derating, Junction-to-F oot 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 T C - Case Temperature (°C) Power (W) Power Derating, Junction-t o-Ambient 0.0 0.3 0.6 0.9 1.2 0 25 50 75 100 125 150 T A - Ambient Temperature (°C) Power (W) www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP2306GN A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless o therwise noted Normalized Thermal Transient Impedance, Jun ction-to-Ambient 10-3 10-2 1 10 10 00010-110-4 100 0.2 0.1 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 125 °C/W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 1000 Normalized Thermal Transient Impedance, Jun ction-to-Foot 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0.5 Square W ave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1

0.05 Single Pulse

0.02 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP2306GN A ll data sheet.com

SOT-23 (TO-236): 3-LEAD b EE1 S e D A2A A1 C Seating Plane 0.10 mm 0.004" C C L q Gauge Plane Seating Plane 0.25 mm Dim MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 0.055 e 0.95 BSC 0.0374 Ref e1 1.90 BSC 0.0748 Ref L 0.40 0.60 0.016 0.024 L1 0.64 Ref 0.025 Ref S 0.50 Ref 0.020 Ref q 3°8 ° 3°8 ° ECN: S-03946-Rev . K, 09-Jul-01 DWG: 5479 www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP2306GN A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR SOT-23 0.106 (2.692) Recommended Minimum Pads Dimensions in Inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) Return to Index www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP2306GN A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be oHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. www.VBsemi.tw E-mail：China@VBsemi TEL:86-755-83251052 AP2306GN A ll data sheet.com