AN303 SILABS | Alldatasheet
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The control voltage of the Si55x is converted by the VCAD C and applied to the internal synthesizer in real-time. as a minimum and maximum percent change from the nominal value. Figure 2. VCXO Transfer Gain Temperature Dependency removed, and the crystal’s temperature stability can be observed.
Rev. 0.1 3 3. Absolute Pull Range Correct understanding the temperature dependencies of the Si55x VCXO allow calcul ation of the absolute pull range (APR). AN266 describes this ca lculation in full detail when taking the total pull-range from the minimum guaranteed Kv; the minimum APR is calculated by taking the minimum pull-range (minimum V C range times the minimum Kv) and subtracting the crystal’s temperature stability and aging stability. 4. Conclusion Silicon Labs’ Si55x VCXOs have two temperature dependencies that are specified ind ependently within the data sheets. The first depende ncy is due to the crystal behavior and is specified as temperatur e stability. The second dependency is due to the V C analog-to-digital converter and is specified as Kv range. Measurement of the crystal behavior can only be observed if the VCADC is made inactive (i.e., V C = 0.0 V). The resulting APR can be calculated by taking the minimum Kv and subtracting the crystal’s temperat ure stability and the crystal’s aging stability.
4 Rev. 0.1 CONTACT INFORMATION Silicon Laboratories Inc.
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