AM9569D AXELITE | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 6

Technical content

Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.3 Sep.11, 20 19 AM9569D P-CHANNEL ENHANCEMENT MODE POWER MOSFET  GENERAL DESCRIPTION The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.  FEATURES ▼ Simple Drive Requirement BVDSS -40V ▼ Fast Switching Characteristic RDS(ON) 90mΩ ▼ RoHS Compliant & Halogen-Free ID -14A  ORDER/MARKING INFORMATION Order Information Top Marking Package Type AM9569 Packing Blank : Bag X X D: TO-252-3L A : Taping ID code:internal AM9 Y Y W WX 5 6 9 WW:01~26 (A~Z) 27~52 (a~z) Year: 18=2018 19=2019 20=2020 21=2021 22=2022 45=2045 Part number

Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.3 Sep.11, 20 19 AM9569D  ABSOLUTE MAXIMUM RATINGS Characteristics Symbol Rating Unit Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current, VGS @ 10V ID@TC=25°C -14 A Continuous Drain Current, VGS @ 10V ID@TC=100°C -8.6 A Pulsed Drain Current1 IDM -40 A Total Power Dissipation PD@TC=25°C 26 W Linear Derating Factor 0.21 W/°C Storage Temperature Range TSTG -55 to 150 °C Operating Junction Temperature Range TJ -55 to 150 °C  THERMAL DATA Characteristics Symbol Rating Unit Maximum Thermal Resistance, Junction-case Rthj-c 4.8 °C/W Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Rthj-a 62.5 °C/W Maximum Thermal Resistance, Junction-ambient Rthj-a 110 °C/W  ELECTRICAL CHARACTERISTICS (VCC = 5V, TA=25°C, unless otherwise specified) Characteristics Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250uA -40 - - V Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj Reference to 25°C, ID=-1mA - -0.03 - V/°C Static Drain-Source On-Resistance2 RDS(ON) VGS=-10V, ID=-10A - - 90 mΩ VGS=-4.5V, ID=-6A 130 mΩ Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA -1 - -3 V Forward Trans conductance gfs VDS=-10V, ID=-10A - 7 - S Drain-Source Leakage Current IDSS VDS=-40V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=125°C) VDS=-32V, VGS=0V -250 uA Gate-Source Leakage IGSS VGS= +20V, VDS=0V ±100 nA Total Gate Charge2 Qg ID=-10A VDS=-30V VGS=-4.5V - 7 12 nC Gate-Source Charge Qgs - 2 - nC Gate-Drain ("Miller") Charge Qgd - 4 - nC Turn-on Delay Time2 td(on) VDS=-20V ID=-10A - 8 - sn Rise Time tr - 20 - ns

Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.3 Sep.11, 20 19 AM9569D Turn-off Delay Time td(off) RG=3.3Ω VGS=-10V RD=2Ω - 19 - ns Fall Time tf - 6 - ns Input Capacitance Ciss VGS=0V VDS=-25V f=1.0MHz - 490 780 pF Output Capacitance Coss - 80 - pF Reverse Transfer Capacitance Crss - 65 - pF Gate Resistance Rg f=1.0MHz - 5.8 8.7 Ω Source-Drain Diode Forward On Voltage2 VDS IS=-10A, VGS=0V - - -1.3 V Reverse Recovery Time2 trr IS=-10A, VGS=0V, dI/dt=-100A/µs - 28 - ns Reverse Recovery Charge Qrr - 26 - nC Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse test 3. Surface mounted on 1 in2 copper pad of FR4 board AM9569D THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. AXElite DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. AXElite RESERV ES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN.

Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.3 Sep.11, 20 19 AM9569D  TYPICAL CHARACTERISTICS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Junction Temperature Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature

Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.3 Sep.11, 20 19 AM9569D  TYPICAL CHARACTERISTICS (COUNTINOUS) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Junction Temperature Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature

Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.3 Sep.11, 20 19 AM9569D  PACKAGE OUTLINES Symbol Dimensions in Millimeters Dimensions in Inches A1 0.89 - 1.14 0.035 - 0.045 b 0.61 TYP. 0.024 TYP. e 2.28 BSC. 0.090 BSC. e1 4.57 BSC. 0.180 BSC. L2 0.88 - 1.27 0.035 - 0.050 Part Marking Information and Packing: TO-252 Laser Marking