AM4953 AXELITE | Alldatasheet

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Technical content

-30V Dual P-Channel Enhancement Mode MOSFET

DESCRIPTION

The AM4953 is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. FEATURE -30V/-5.2A, R DS(ON) 60mΩ@V GS = -10V -30V/-4.5A, R DS(ON) 90mΩ@V GS = -4.5V Super high density cell design for extremely low R DS(ON) Exceptional on-resistance and maximum DC current capability Full RoHS compliance SOP-8 package design

APPLICATIONS

Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter PIN CONFIGURATION D2 D2 S1 G1 S2 G2 TOP VIEW SOP-8 P-Channel P-Channel Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.1 Sep.14, 2012

S : SOP-8 Packing Blank : Tube A : Taping AM4953X - X YY: Year Code WW: Week Code A: Internal Code AM4953 YYWWA MARKING Packing Package PART MARKING INFORMATION Part Number Package Code Package Shipping AM4953S-A S SOP-8 2500 /Tape&Reel Year Code : 00 ~ 99※ ※ Week Code : 01~52 ※ SOP-8 : Only available in tape and reel packaging. (A reel contains 2500 devices) G : Lead※ -free product. This product is RoHS compliant ABSOLUTE MAXIMUM RATINGS A = 25 Unless otherwise noted ) Symbol Parameter Typical Unit V DSS Drain-Source Voltage -30 V V GSS Gate-Source Voltage ±20 V I D Continuous Drain Current (T J =150 ) V GS = -10V -5.2 A I DM Pulsed Drain Current -20 A I S Continuous Source Current (Diode Conduction) -2.4 A T J Operation Junction Temperature -55~150 T STG Storage Temperature Range -55~150 P D Power Dissipation T A =25 T A =70 2.8 1.8 W R θJA Thermal Resistance-Junction to Ambient 70 ℃/W Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.1 Sep.14, 2012

ELECTRICAL CHARACTERISTICS

A = 25℃ Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters V (BR)DSS Drain-Source Breakdown Voltage V GS =0V,I D =-250μA -30 V V GS(th) Gate Threshold Voltage V DS GS D I GSS Gate Leakage Current V DS =0V,V GS =±20V ±100 nA I DSS Zero Gate Voltage Drain Current V DS =-30V,V GS =0V -1 μA V DS =-30V,V GS =0V T J =55 I D(ON) On-State Drain Current V DS 5V,V GS ≦-10V -25 A R DS(ON) Drain-source On-Resistance V GS =-10V,I D =-5.2A V GS =-4.5V, I D =-4.5A 90 mΩ G fs Forward Transconductance V DS =-10V,I D =-5.2A 10 S Source-Drain Doide Is Diode forward Current (Max.) 2.6 A V SD Diode Forward Voltage I S =-2.0A,V GS =0V -0.8 -1.2 V Dynamic Parameters Q g Total Gate Charge V DS =-15V,V GS =-10V I D =-5.0A 15 10 nC Q gs Gate-Source Charge 4.0 Q gd Gate-Drain Charge 2.0 C iss Input Capacitance V DS =-15V,V GS =0V f =1MHz 680 pF C oss Output Capacitance 120 C rss Reverse Transfer Capacitance 75 t d(on) Turn-On Time V DD =-15V,R L =15Ω I D =-1.0A,V GEN =-10V R G =6Ω 7.0 15 nS t r 10 20 t d(off) Turn-Off Time 40 80 t f 20 40 Note : 1. Pulse test: pulse width <= 300us, duty cycle<= 2% 2. Static parameters are based on package level with recommended wire-bonding Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.1 Sep.14, 2012

(25℃ Unless Note) AM4953 Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.1 Sep.14, 2012

(25℃ Unless Note) AM4953 Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.1 Sep.14, 2012

L H E A e D (4X) b y C DETAIL A θ Dimensions in Millimeters Dimensions in Inches Symbol Min. Nom. Max. Min. Nom. Max. A1 0.1 - 0.25 0.04 - 0.1 L 0.4 - 1.27 0.015 - 0.05 e 1.27 BSC 0.050 BSC θ 0 O - 8 O O - 8 O Mold flash shall not exceed 0.25mm per side JEDEC outline: MS-012 AA Axelite Confidential Materials, do not copy or distribute without written consent. Rev.1.1 Sep.14, 2012